公开(公告)号：US11190163B2

公开(公告)日：2021-11-30

申请号：US16694446

申请日：2019-11-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Keisuke Nishio ,  Syunsuke Kido ,  Masanori Kato ,  Hiroshi Matsubara

IPC: H03H9/64 ,  H03H9/54 ,  H03H9/02 ,  H03H7/01 ,  H03H7/075 ,  H03H9/72 ,  H03H9/70 ,  H03H9/60 ,  H03H7/46

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

公开(公告)号：US10804882B2

公开(公告)日：2020-10-13

申请号：US16574249

申请日：2019-09-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi Matsubara ,  Masanori Kato ,  Syunsuke Kido

IPC: H03F3/191 ,  H03H9/70 ,  H03F3/195 ,  H03H7/38 ,  H03H9/54 ,  H03H9/60 ,  H04B1/52

Abstract: A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB.

公开(公告)号：US09935611B2

公开(公告)日：2018-04-03

申请号：US15265912

申请日：2016-09-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masanori Otagawa ,  Syunsuke Kido ,  Hideki Iwamoto

IPC: H03H9/64 ,  H03H9/72 ,  H03H9/02 ,  H03H9/54

CPC classification number: H03H9/6489 ,  H03H9/02574 ,  H03H9/02818 ,  H03H9/54 ,  H03H9/6483 ,  H03H9/725

Abstract: A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where λc is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, VC−(P+SV) is an acoustic velocity of a P+SV wave, VC−SH is an acoustic velocity of a SH wave, and VC−HO is an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, VC−(P+SV) fF−H, or VC−SH/λC fF−H.

公开(公告)号：US12267059B2

公开(公告)日：2025-04-01

申请号：US17946574

申请日：2022-09-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Syunsuke Kido ,  Tetsuya Kimura ,  Sho Nagatomo ,  Minefumi Ouchi

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/56

Abstract: An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

公开(公告)号：US11595014B2

公开(公告)日：2023-02-28

申请号：US16727597

申请日：2019-12-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi Matsubara ,  Masanori Kato ,  Syunsuke Kido

IPC: H03H7/01 ,  H03H9/60 ,  H03H9/05 ,  H03H9/64 ,  H03H1/00

Abstract: A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

公开(公告)号：US10447240B2

公开(公告)日：2019-10-15

申请号：US15186619

申请日：2016-06-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takashi Yamane ,  Hideki Iwamoto ,  Keiji Okada ,  Syunsuke Kido ,  Masanori Otagawa ,  Ippei Hatsuda ,  Korekiyo Ito

IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H01L41/047 ,  H01L41/08 ,  H01L41/18

Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ν. The oblique angle ν is about 0.4° or more and about 10° or less.

公开(公告)号：US10250214B2

公开(公告)日：2019-04-02

申请号：US15794072

申请日：2017-10-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masanori Kato ,  Syunsuke Kido

IPC: H03H7/01 ,  H03H7/38 ,  H03H9/46 ,  H04J1/04 ,  H03H9/54 ,  H03H9/60 ,  H03H9/64 ,  H03H9/02

Abstract: A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator.

公开(公告)号：US10236859B2

公开(公告)日：2019-03-19

申请号：US15480522

申请日：2017-04-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Syunsuke Kido

IPC: H03H9/25 ,  H03H9/64 ,  H03H9/145 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17

Abstract: A filter component with a passive element includes a filter substrate, an elastic wave filter including an elastic wave resonator in a predetermined region of one main surface of the filter substrate, and a support substrate on another main surface of the filter substrate, wherein a passive element is provided in or on a support substrate, the passive element includes a wiring electrode and is electrically connected to the elastic wave filter.

公开(公告)号：US09748923B2

公开(公告)日：2017-08-29

申请号：US13900743

申请日：2013-05-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hajime Kando ,  Syunsuke Kido ,  Keiji Okada ,  Munehisa Watanabe

IPC: H03H9/02 ,  H03H9/25 ,  H03H3/02 ,  H03H3/08

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02834 ,  Y10T29/42

Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (φ, θ, ψ) of the LiTaO3 fall within specific ranges.

公开(公告)号：US09621128B2

公开(公告)日：2017-04-11

申请号：US14576748

申请日：2014-12-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hideki Iwamoto ,  Syunsuke Kido

IPC: H03H9/25 ,  H03H9/02 ,  H01L41/047 ,  H01L41/08 ,  H03H9/17 ,  H03H9/205

CPC classification number: H03H9/25 ,  H01L41/047 ,  H01L41/0805 ,  H03H9/0222 ,  H03H9/02574 ,  H03H9/171 ,  H03H9/205

Abstract: An elastic wave device includes a high acoustic velocity film configured such that a bulk wave propagates at a higher acoustic velocity than an elastic wave that propagates in a piezoelectric film, a low acoustic velocity film configured such that a bulk wave propagates at a lower acoustic velocity than a bulk wave that propagates in the piezoelectric film is laminated on the high acoustic velocity film, the piezoelectric film is laminated on the low acoustic velocity film, and an IDT electrode is laminated on one surface of the piezoelectric film. In an upper structure section, an energy concentration ratio of a main mode which is an elastic wave is not less than about 99.9% and an energy concentration ratio of a high order mode which is spurious is not more than about 99.5%.