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公开(公告)号:US11509280B2
公开(公告)日:2022-11-22
申请号:US16680891
申请日:2019-11-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa Watanabe , Hideki Iwamoto , Hajime Kando , Syunsuke Kido
IPC: H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H01L41/04 , H01L41/047 , H03H9/54 , H03H3/10 , H01L41/18 , H01L41/22
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号:US10511279B2
公开(公告)日:2019-12-17
申请号:US15666596
申请日:2017-08-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa Watanabe , Hideki Iwamoto , Hajime Kando , Syunsuke Kido
IPC: H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H01L41/04 , H01L41/047 , H03H9/54 , H03H3/10 , H01L41/18 , H01L41/22
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号:US09831848B2
公开(公告)日:2017-11-28
申请号:US15212489
申请日:2016-07-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa Watanabe , Hideki Iwamoto , Hajime Kando , Syunsuke Kido
IPC: H01L41/047 , H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H01L41/04 , H03H9/54 , H03H3/10 , H01L41/18 , H01L41/22
CPC classification number: H03H9/0222 , H01L41/04 , H01L41/047 , H01L41/0477 , H01L41/18 , H01L41/22 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号:US09484885B2
公开(公告)日:2016-11-01
申请号:US14488447
申请日:2014-09-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa Watanabe , Hideki Iwamoto , Hajime Kando , Syunsuke Kido
CPC classification number: H03H9/0222 , H01L41/04 , H01L41/047 , H01L41/0477 , H01L41/18 , H01L41/22 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.
Abstract translation: 一种制造弹性波装置的方法包括制备支撑基底的步骤,在支撑基底上形成高声速膜并且其中传播的体波的声速高于声速的步骤 在压电膜中传播的弹性波,在高音速膜上形成低声速膜并且其中传播的体波的声速低于体积的声速的步骤 在压电膜中传播的波,在低声速膜上形成压电膜的步骤,以及在压电膜的表面上形成IDT电极的步骤。
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公开(公告)号:US11863152B2
公开(公告)日:2024-01-02
申请号:US17968828
申请日:2022-10-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa Watanabe , Hideki Iwamoto , Hajime Kando , Syunsuke Kido
IPC: H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H03H9/54 , H03H3/10
CPC classification number: H03H9/0222 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H10N30/01 , H10N30/80 , H10N30/85 , H10N30/87 , H10N30/877 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号:US11165409B2
公开(公告)日:2021-11-02
申请号:US16658211
申请日:2019-10-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tomio Kanazawa , Hiroshi Shimizu , Syunsuke Kido , Ryo Nakagawa
Abstract: An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction.
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公开(公告)号:US10727805B2
公开(公告)日:2020-07-28
申请号:US16273192
申请日:2019-02-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masanori Kato , Syunsuke Kido
Abstract: A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator.
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公开(公告)号:US10243538B2
公开(公告)日:2019-03-26
申请号:US16032098
申请日:2018-07-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masanori Kato , Syunsuke Kido , Minoru Iwanaga , Hiroshi Matsubara
Abstract: A high-frequency filter coupled between an input-output terminal and another input-output terminal includes series arm resonators, parallel arm resonators, and an inductor defining an LC resonant circuit. Frequencies at a first attenuation pole defined by resonant frequencies or anti-resonant frequencies of the series arm resonators and the parallel arm resonators and a frequency at a second attenuation pole defined by a resonant frequency of the LC resonant circuit are included in one stop band of the high-frequency filter, and the frequencies at the first attenuation pole are located closer than the frequency at the second attenuation pole to a pass band of the high-frequency filter.
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公开(公告)号:US12255635B2
公开(公告)日:2025-03-18
申请号:US17869808
申请日:2022-07-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kentaro Nakamura , Shinichi Okada , Syunsuke Kido
Abstract: An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides. When the number of electrode fingers of the shared reflector is even, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have the same polarity. When the number of electrode fingers of the shared reflector is odd, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have opposite polarities.
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公开(公告)号:US12199589B2
公开(公告)日:2025-01-14
申请号:US17452474
申请日:2021-10-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Keisuke Nishio , Syunsuke Kido , Masanori Kato , Hiroshi Matsubara
IPC: H03H9/02 , H03H7/01 , H03H7/075 , H03H7/46 , H03H9/54 , H03H9/60 , H03H9/64 , H03H9/70 , H03H9/72
Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.
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