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11.发明申请SEMICONDUCTOR NANOPARTICLES AND METHOD OF PRODUCING SEMICONDUCTOR NANOPARTICLES 审中-公开半导体纳米材料及其制备半导体纳米材料的方法公开(公告)号：US20170022413A1
公开(公告)日：2017-01-26
申请号：US15215961
申请日：2016-07-21
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Akihiro FUKATSU , Daisuke OYAMATSU
CPC classification number: C09K11/621 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01G15/006 , C01P2002/54 , C01P2002/72 , C01P2004/04 , C01P2004/64 , C01P2004/84 , H01L33/502 , H01L33/504 , Y10S977/773 , Y10S977/813 , Y10S977/896 , Y10S977/95
Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
Abstract translation: 提供了制造半导体纳米颗粒的方法。 该方法包括在温度设定在100℃至300℃范围内的温度下将初级半导体纳米颗粒和元素M1的盐加热到溶剂中。初级半导体纳米颗粒含有元素M1，元素M2，任选的元素 M3，元素Z，平均粒径为50nm以下。 元素M1是选自由Ag，Cu和Au组成的组中的至少一种元素。 元素M2是选自Al，Ga，In和Tl中的至少一种元素。 元素M3是选自Zn和Cd中的至少一种元素。 元素Z是选自S，Se和Te中的至少一种元素。
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12.发明申请TELLURIUM COMPOUND NANOPARTICLES, COMPOSITE NANOPARTICLES, AND PRODUCTION METHODS THEREFOR 审中-公开天然化合物纳米粒子，复合纳米粒子及其生产方法公开(公告)号：US20170002265A1
公开(公告)日：2017-01-05
申请号：US15200528
申请日：2016-07-01
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Yujiro ISHIGAMI , Kouta SUGIURA , Daisuke OYAMATSU
CPC classification number: C09K11/881 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B19/007 , C01G15/006 , C01P2002/72 , C01P2002/76 , C01P2002/77 , C01P2004/04 , C01P2004/16 , C01P2004/64 , C01P2004/80 , H01L33/502 , Y10S977/762 , Y10S977/896 , Y10S977/95
Abstract: Tellurium compound nanoparticles, including: an element M1 where M1 is at least one element selected from Cu, Ag, and Au; an element M2 where M2 is at least one element selected from B, Al, Ga, and In; Te; and optionally an element M3 where M3 is at least one element selected from Zn, Cd, and Hg; wherein a crystal structure of the tellurium compound nanoparticles is a hexagonal system, the tellurium compound nanoparticles are of a rod shape and have an average short-axis length of 5.5 nm or less, and when irradiated with light at a wavelength in a range of 350 nm to 1,000 nm, the tellurium compound nanoparticles emit photoluminescence having a wavelength longer than the wavelength of the irradiation light.
Abstract translation: 碲化合物纳米颗粒，包括：元素M1，其中M1是选自Cu，Ag和Au中的至少一种元素; M2是选自B，Al，Ga和In中的至少一种元素的元素M2; Te 和任选的元素M3，其中M3是选自Zn，Cd和Hg中的至少一种元素; 其中，所述碲化合物纳米粒子的晶体结构为六方晶系，所述碲化合物纳米粒子为棒状，平均短轴长度为5.5nm以下，并且当以350nm以下的波长的光照射时 nm至1000nm，碲化合物纳米粒子发射波长比照射光的波长长的光致发光。
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13.发明申请公开(公告)号：US20240387784A1
公开(公告)日：2024-11-21
申请号：US18294524
申请日：2022-07-08
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Susumu KUWABATA , Taro UEMATSU , Tomoya KUBO , Yohei IKAGAWA , Daisuke OYAMATSU
Abstract: Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. The method comprises performing a first heat treatment of a first mixture, which contains a Cu salt, a Ag salt, a salt containing at least one of In or Ga, a gallium halide, and an organic solvent, to obtain first semiconductor nanoparticles. At least one of the Cu salt, the Ag salt, or the salt containing at least one of In or Ga in the first mixture contains a compound having a bond formed of a metal and sulfur.
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公开(公告)号：US20230416603A1
公开(公告)日：2023-12-28
申请号：US18464517
申请日：2023-09-11
Applicant: OSAKA UNIVERSITY , NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , NICHIA CORPORATION
Inventor： Susumu KUWABATA , Taro UEMATSU , Kazutaka WAJIMA , Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Daisuke OYAMATSU , Kenta NIKI
CPC classification number: C09K11/621 , B01J13/02 , C09K11/02 , C09B67/0097 , H01L33/502
Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
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15.发明申请公开(公告)号：US20210343908A1
公开(公告)日：2021-11-04
申请号：US17305808
申请日：2021-07-14
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Chie MIYAMAE , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU , Kenta NIKI
Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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Patent Agency Ranking
公开(公告)号：US20210083146A1
公开(公告)日：2021-03-18
申请号：US16970329
申请日：2019-02-15
Applicant: OSAKA UNIVERSITY , National University Corporation Tokai National Higher Education and Research System , NICHIA CORPORATION
Inventor： Susumu KUWABATA , Taro UEMATSU , Kazutaka WAJIMA , Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Daisuke OYAMATSU
Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125° C. to 175° C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125° C. to 175° C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.
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17.发明申请公开(公告)号：US20210062083A1
公开(公告)日：2021-03-04
申请号：US17097516
申请日：2020-11-13
Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.
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18.发明申请公开(公告)号：US20150159836A1
公开(公告)日：2015-06-11
申请号：US14590520
申请日：2015-01-06
Applicant: NICHIA CORPORATION
Inventor： Hiroto TAMAKI , Takayoshi WAKAKI , Tadao HAYASHI , Yoshiki SATO , Daisuke OYAMATSU , Takafumi SUGIYAMA , Takao KOSUGI
IPC: F21V9/16 , F21K99/00 , C23C16/455 , F21V13/08
CPC classification number: F21V9/30 , B05D5/06 , C23C16/45525 , F21K9/60 , F21V7/00 , F21V13/08 , F21Y2115/10 , F21Y2115/30 , H01L31/055 , H01L33/502 , H01L33/505 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H05B33/12 , Y02E10/52 , Y10T428/24364 , Y10T428/24372 , Y10T428/24413 , Y10T428/24421 , H01L2924/00014
Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.
Abstract translation: 波长转换无机部件可以在基体上包括基体和无机粒子层。 无机粒子层可以包括被配置为吸收第一波长的光并发射与第一波长不同的第二波长的光的无机波长转换物质的粒子。 无机颗粒层可以包括多个颗粒的附聚物。 多个颗粒中的每一个与至少一个其它颗粒或基体接触。 覆盖层包括无机材料，并且覆盖层连续地覆盖基体的表面和颗粒的表面。 无机颗粒层具有由颗粒包围的空隙，或由颗粒和基体和覆盖层之一组成的间隙。
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公开(公告)号：US20240063334A1
公开(公告)日：2024-02-22
申请号：US18358534
申请日：2023-07-25
Applicant: National University Corporation Tokai National Higher Education and Research System , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Yuki MORI , Hiroki YAMAUCHI , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU
CPC classification number: H01L33/06 , B82Y15/00 , B82Y40/00 , H01L33/0095 , H01L2933/0033
Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
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20.发明公开公开(公告)号：US20230253533A1
公开(公告)日：2023-08-10
申请号：US18191829
申请日：2023-03-28
Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
Inventor： Tsukasa TORIMOTO , Tatsuya KAMEYAMA , Marino KISHI , Chie MIYAMAE , Susumu KUWABATA , Taro UEMATSU , Daisuke OYAMATSU , Kenta NIKI
CPC classification number: H01L33/502 , C09K11/62 , H01L33/005 , H01L33/06 , H01L33/507
Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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