公开(公告)号：US20240332462A1

公开(公告)日：2024-10-03

申请号：US18735999

申请日：2024-06-06

Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Marino KISHI ,  Chie MIYAMAE ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU ,  Kenta NIKI

IPC: H01L33/50 ,  C09K11/62 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/502 ,  C09K11/62 ,  H01L33/005 ,  H01L33/06 ,  H01L33/507

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

公开(公告)号：US20200140750A1

公开(公告)日：2020-05-07

申请号：US16717105

申请日：2019-12-17

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Marino KISHI ,  Susumu KUWABATA ,  Taro UEMATSU ,  Daisuke OYAMATSU

IPC: C09K11/62 ,  H01L33/50

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

公开(公告)号：US20170267924A1

公开(公告)日：2017-09-21

申请号：US15459767

申请日：2017-03-15

Applicant: OSAKA UNIVERSITY ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Susumu KUWABATA ,  Taro UEMATSU ,  Kazutaka WAJIMA ,  Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Daisuke OYAMATSU ,  Kenta NIKI

IPC: C09K11/62 ,  H01L33/50 ,  G02F1/1335 ,  B01J13/02

CPC classification number: C09K11/621 ,  B01J13/02 ,  B82Y30/00 ,  B82Y40/00 ,  C09B67/0097 ,  C09K11/02 ,  G02F1/133617 ,  G02F2001/133614 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/813 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

公开(公告)号：US20130257264A1

公开(公告)日：2013-10-03

申请号：US13852332

申请日：2013-03-28

Applicant: NICHIA CORPORATION

Inventor： Hiroto TAMAKI ,  Takayoshi WAKAKI ,  Tadao HAYASHI ,  Yoshiki SATO ,  Daisuke OYAMATSU ,  Takafumi SUGIYAMA ,  Takao KOSUGI

IPC: H01L31/055 ,  H05B33/12 ,  B05D5/06 ,  F21V7/00

CPC classification number: F21V9/30 ,  B05D5/06 ,  C23C16/45525 ,  F21K9/60 ,  F21V7/00 ,  F21V13/08 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L31/055 ,  H01L33/502 ,  H01L33/505 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H05B33/12 ,  Y02E10/52 ,  Y10T428/24364 ,  Y10T428/24372 ,  Y10T428/24413 ,  Y10T428/24421 ,  H01L2924/00014

Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.

公开(公告)号：US20230151271A1

公开(公告)日：2023-05-18

申请号：US17905900

申请日：2021-03-08

Applicant: National University Corporation Tokai National Higher Education and Research System ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Susumu KUWABATA ,  Taro UEMATSU ,  Yohei IKAGAWA ,  Daisuke OYAMATSU ,  Tomoya KUBO

IPC: C09K11/62

CPC classification number: C09K11/621 ,  B82Y20/00

Abstract: Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.

公开(公告)号：US20220017819A1

公开(公告)日：2022-01-20

申请号：US17449255

申请日：2021-09-28

Applicant: OSAKA UNIVERSITY ,  NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  NICHIA CORPORATION

Inventor： Susumu KUWABATA ,  Taro UEMATSU ,  Kazutaka WAJIMA ,  Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Daisuke OYAMATSU ,  Kenta NIKI

IPC: C09K11/62 ,  B01J13/02 ,  C09K11/02 ,  C09B67/02

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

公开(公告)号：US20210040385A1

公开(公告)日：2021-02-11

申请号：US16970273

申请日：2019-02-15

Applicant: OSAKA UNIVERSITY ,  National University Corporation Tokai National Higher Education and Research System ,  NICHIA CORPORATION

Inventor： Susumu KUWABATA ,  Taro UEMATSU ,  Kazutaka WAJIMA ,  Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Daisuke OYAMATSU

IPC: C09K11/62 ,  H01L33/50 ,  B82Y40/00 ,  B82Y20/00

Abstract: Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M1, M2, and Z, M1 containing at least one selected from the group consisting of Ag, Cu, and Au, M2 containing at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.

公开(公告)号：US20200308483A1

公开(公告)日：2020-10-01

申请号：US16900980

申请日：2020-06-14

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Akihiro FUKATSU ,  Daisuke OYAMATSU

IPC: C09K11/62 ,  C01G15/00 ,  H01L33/50

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

公开(公告)号：US20240209258A1

公开(公告)日：2024-06-27

申请号：US18554068

申请日：2022-02-22

Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM ,  OSAKA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Susumu KUWABATA ,  Taro UEMATSU ,  Yohei IKAGAWA ,  Daisuke OYAMATSU ,  Tomoya KUBO

IPC: C09K11/62 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/626 ,  B82Y20/00 ,  B82Y40/00

Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit band-edge emission and have excellent band-edge emission purity and internal quantum yield. The method includes: providing first semiconductor nanoparticles that contains a semiconductor containing an element M1, an element M2, and an element Z, where the element M1 is at least one element selected from the group consisting of Ag, Cu, Au, and alkali metals, and contains at least Ag, the element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and contains at least one of In or Ga, and the element Z contains at least one element selected from the group consisting of S, Se, and Te; heat-treating a mixture, which contains the first semiconductor nanoparticles, a compound containing a Group 13 element, and a compound containing a Group 16 element, to obtain second semiconductor nanoparticles; and heat-treating the second semiconductor nanoparticles in the presence of a halide of a Group 13 element to obtain third semiconductor nanoparticles.

公开(公告)号：US20190153310A1

公开(公告)日：2019-05-23

申请号：US16260767

申请日：2019-01-29

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  NICHIA CORPORATION

Inventor： Tsukasa TORIMOTO ,  Tatsuya KAMEYAMA ,  Akihiro FUKATSU ,  Daisuke OYAMATSU

IPC: C09K11/62 ,  H01L33/50 ,  C01G15/00

CPC classification number: C09K11/621 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01G15/006 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/84 ,  H01L33/502 ,  H01L33/504 ,  Y10S977/773 ,  Y10S977/813 ,  Y10S977/896 ,  Y10S977/95

Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.