公开(公告)号：US07169705B2

公开(公告)日：2007-01-30

申请号：US10989658

申请日：2004-11-17

申请人： Kunihito Ide ,  Koji Mishima ,  Hiroyuki Kanda ,  Hidenao Suzuki ,  Kazufumi Nomura

发明人： Kunihito Ide ,  Koji Mishima ,  Hiroyuki Kanda ,  Hidenao Suzuki ,  Kazufumi Nomura

IPC分类号： H01L21/44

CPC分类号： C25D17/001 ,  C25D3/38 ,  C25D7/123 ,  H01L21/2885

摘要： A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.6 mole/L of an organic acid or an inorganic acid; and applying a voltage between the conductive layer and the anode to plate a surface of the conductive layer.

摘要翻译： 电镀方法能够沉积相对于薄种子层具有优异的面内均匀性的电镀膜，并且相对于细的镶嵌结构具有优异的嵌入性。 电镀方法包括：将电阻器定位在形成在基板表面的至少一部分上的导电层和阳极之间; 在导电层侧将导电层和阳极之间的电镀溶液分别引入到阳极侧的导电层和阳极之间的空间中，由此将电镀液填充到由 电镀溶液和阳极溶液，电镀液含有25〜75g / L的铜离子和至少0.4mol / L的有机酸或无机酸，并且阳极溶液与镀层的组成相同 溶液，或含有0至75g / L的铜离子和至多0.6mol / L的有机酸或无机酸; 以及在所述导电层和所述阳极之间施加电压以对所述导电层的表面进行平板化。

公开(公告)号：US20050145482A1

公开(公告)日：2005-07-07

申请号：US10973350

申请日：2004-10-27

申请人： Hidenao Suzuki ,  Koji Mishima ,  Hiroyuki Kanda ,  Kazufumi Nomura ,  Kunihito Ide ,  Kazuyuki Yahiro ,  Hiroshi Toyoda ,  Tetsuo Matsuda

发明人： Hidenao Suzuki ,  Koji Mishima ,  Hiroyuki Kanda ,  Kazufumi Nomura ,  Kunihito Ide ,  Kazuyuki Yahiro ,  Hiroshi Toyoda ,  Tetsuo Matsuda

IPC分类号： C25D7/12 ,  C25D17/00 ,  C25D17/06 ,  C25D21/10 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/68 ,  H01L21/683

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

摘要： An apparatus and a method for processing substrate are generally used for apparatuses for wet-type process of substrate, such as an electrolytic processing apparatus for use in forming interconnects by embedding a metal such as copper (Cu) or the like in fine interconnect patterns (recesses) that are formed in a substrate such as a semiconductor wafer and for use in forming bumps for electrical connections. The substrate processing apparatus includes: a substrate holder for holding a substrate; a first electrode for contacting the substrate to supply electricity to a processing surface of the substrate; a second electrode disposed so as to face the processing surface of the substrate held by the substrate holder; and a processing liquid supply section for supplying a processing liquid into the space between the processing surface of the substrate held by the substrate holder and the second electrode, wherein the substrate holder is designed to rotate the substrate during processing in such a manner that acceleration and slowdown and/or normal rotation and reverse rotation are repeated.

摘要翻译： 用于处理衬底的装置和方法通常用于衬底的湿式处理装置，例如通过将金属（例如铜）（Cu）等嵌入到精细互连图案中而形成互连件的电解处理装置 凹部），其形成在诸如半导体晶片的基板中，并且用于形成用于电连接的凸块。 基板处理装置包括：用于保持基板的基板保持件; 第一电极，用于接触所述衬底以向所述衬底的处理表面供电; 第二电极，其设置成面对由所述基板保持器保持的所述基板的处理表面; 以及处理液体供应部分，用于将处理液体供应到由基板保持器保持的基板的处理表面与第二电极之间的空间中，其中基板保持器设计成在加工期间使基板旋转， 重复减速和/或正常旋转和反向旋转。

公开(公告)号：US20090045067A1

公开(公告)日：2009-02-19

申请号：US12232516

申请日：2008-09-18

申请人： Koji Mishima ,  Kunihito Ide ,  Hidenao Suzuki ,  Kazufumi Nomura ,  Hiroyuki Kanda

发明人： Koji Mishima ,  Kunihito Ide ,  Hidenao Suzuki ,  Kazufumi Nomura ,  Hiroyuki Kanda

IPC分类号： C25D5/02 ,  C25D17/10 ,  C25D21/12

CPC分类号： C25D17/002 ,  C25D17/001 ,  C25D21/04 ,  H01L21/2885

摘要： A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.

摘要翻译： 提出了一种方法和装置，即使对于薄的进料层，也能够在表面积内处理高均匀性的基板。 该方法包括布置对置电极和基板以彼此面对; 在对电极和基板之间提供膜以限定基板侧区域和对电极侧区域。 基板侧区域和对置电极侧区域能够容纳各种电解质。 向基板侧区域和对电极侧区域供给具有不同比电阻的各电解质。 在基板和对置电极之间也提供处理电流。

公开(公告)号：US20050164498A1

公开(公告)日：2005-07-28

申请号：US10989658

申请日：2004-11-17

申请人： Kunihito Ide ,  Koji Mishima ,  Hiroyuki Kanda ,  Hidenao Suzuki ,  Kazufumi Nomura

发明人： Kunihito Ide ,  Koji Mishima ,  Hiroyuki Kanda ,  Hidenao Suzuki ,  Kazufumi Nomura

IPC分类号： C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： C25D17/001 ,  C25D3/38 ,  C25D7/123 ,  H01L21/2885

摘要： A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method including: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of the substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on the conductive layer side, and an anode solution into the space between the conductive layer and the anode on the anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, the plating solution containing 25 to 75 g/L of copper ions and 0.4 mole/L or more of an organic acid or an inorganic acid, and the anode solution being of the same composition as said plating solution, or containing 0 to 75 g/L of copper ions and 0.6 mole/L or less of an organic acid or an inorganic acid; and applying a voltage between the conductive layer and the anode to plate a surface of the conductive layer.

摘要翻译： 电镀方法能够沉积相对于薄种子层具有优异的面内均匀性的电镀膜，并且相对于细的镶嵌结构具有优异的嵌入性。 电镀方法包括：在形成在基板表面的至少一部分上的导电层和阳极之间定位电阻器; 在导电层侧的导电层和阳极之间的空间中分别引入电镀液，将阳极溶液引入到阳极侧的导电层和阳极之间的空间中，由此填充由 电镀液和阳极溶液，含有25〜75g / L的铜离子和0.4mol / L以上的有机酸或无机酸的电镀液，所述阳极溶液与所述电镀液的组成相同 ，或含有0〜75g / L的铜离子和0.6摩尔/ L以下的有机酸或无机酸; 以及在所述导电层和所述阳极之间施加电压以对所述导电层的表面进行平板化。

公开(公告)号：US20050051434A1

公开(公告)日：2005-03-10

申请号：US10933353

申请日：2004-09-03

申请人： Koji Mishima ,  Masao Hodai ,  Hiroyuki Kanda ,  Kunihito Ide ,  Satoru Yamamoto ,  Seiji Katsuoka ,  Masaaki Kinbara ,  Masaji Akahori ,  Sota Nakagawa

发明人： Koji Mishima ,  Masao Hodai ,  Hiroyuki Kanda ,  Kunihito Ide ,  Satoru Yamamoto ,  Seiji Katsuoka ,  Masaaki Kinbara ,  Masaji Akahori ,  Sota Nakagawa

IPC分类号： C25D21/16 ,  C25D21/12 ,  C25D21/18 ,  C25D21/22 ,  C25D21/06 ,  C25C7/00

CPC分类号： C25D21/12 ,  C25D21/22

摘要： An electrolytic solution control method can control the composition of an electrolytic solution efficiently with high precision, and can remove a partially decomposed product of an organic component from an electrolytic solution. The electrolytic solution control method includes storing an electrolytic solution containing an organic component and an inorganic component in an electrolytic solution storage tank while controlling and keeping the electrolytic solution at a predetermined composition, adjusting an inorganic component of the waste electrolytic solution after use in electrolytic processing in an electrolytic processing apparatus, and then returning the waste electrolytic solution to the electrolytic solution storage tank.

摘要翻译： 电解液控制方法能够高精度地有效地控制电解液的组成，能够从电解液中除去有机成分的部分分解产物。 电解液控制方法包括将电解液储存罐中含有有机成分和无机成分的电解液同时控制并保持电解液为规定的组成，在电解处理后调整废电解液的无机成分 在电解处理装置中，然后将废电解液返回到电解液储罐。