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公开(公告)号：US20100269636A1
公开(公告)日：2010-10-28
申请号：US12832847
申请日：2010-07-08
CPC分类号： C21B13/0033 , C21B13/146 , F27B15/10 , Y02P10/122 , Y02P10/126 , Y02P10/136
摘要： An apparatus for reducing a metalliferous material in a fluidized bed includes a vessel for containing the fluidized bed, a mechanism for supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into the vessel for forming the fluidized bed in the vessel. The oxygen-containing gas supply mechanism includes one or more than one oxygen-containing gas injection lance having a lance tip with an outlet that is positioned for injecting the oxygen-containing gas in a downward flow into the vessel within a range of plus or minus 40° to the vertical.
摘要翻译： 用于还原流化床中的含金属材料的装置包括用于容纳流化床的容器，用于将含金属材料，固体碳质材料，含氧气体和流化气体供应到用于形成流化床的容器中的机构 在船上的床。 含氧气体供给机构包括一个或多于一个的含氧气体注入喷枪，其具有喷枪头，其具有出口，该出口位于将含氧气体以向下流动的方式注入到容器内，该加载气体在正或负的范围内 40°垂直。
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12.发明授权Method for fabricating trench capacitors for integrated semiconductor memories 有权用于制造用于集成半导体存储器的沟槽电容器的方法公开(公告)号：US07087484B2
公开(公告)日：2006-08-08
申请号：US10616396
申请日：2003-07-09
申请人： Matthias Goldbach , Jörn Lützen , Andreas Orth
发明人： Matthias Goldbach , Jörn Lützen , Andreas Orth
IPC分类号： H01L28/8242
CPC分类号： H01L27/10867 , H01L27/1087
摘要： In a method for fabricating trench capacitors, in particular for memory cells having at least one selection transistor for integrated semiconductor memories, a trench for the trench capacitor is formed. The trench has a lower trench region, in which the capacitor is disposed, and an upper trench region, in which an electrically conductive connection from an electrode of the capacitor to a diffusion zone of the selection transistor is disposed. The method reduces the number of process steps for the fabrication of memory cells and enables fabrication of buried collars in the storage capacitors with an insulation quality as required for the fabrication of very large-scale integrated memory cells (
摘要翻译： 在用于制造沟槽电容器的方法中，特别是对于具有用于集成半导体存储器的至少一个选择晶体管的存储器单元，形成用于沟槽电容器的沟槽。 沟槽具有设置电容器的下沟槽区域和上沟槽区域，其中设置从电容器的电极到选择晶体管的扩散区域的导电连接。 该方法减少了用于制造存储器单元的工艺步骤的数量，并且能够以存储非常大规模的集成存储器单元（<300nm沟槽直径）所需的绝缘品质在存储电容器中制造埋入的套环。
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公开(公告)号：US20050158945A1
公开(公告)日：2005-07-21
申请号：US10980069
申请日：2004-11-03
IPC分类号： H01L21/8239 , H01L21/334 , H01L21/8229 , H01L21/8242 , H01L29/94
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译： 本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103） 型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域 型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105） 的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。
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14.发明授权公开(公告)号：US06688474B1
公开(公告)日：2004-02-10
申请号：US09700358
申请日：2000-11-13
申请人： Martin Hirsch , Andreas Orth , Peter Weber
发明人： Martin Hirsch , Andreas Orth , Peter Weber
IPC分类号： B07B400
CPC分类号： F27B15/02 , B01J8/0025 , B01J8/1872
摘要： According to the invention, a fluidizing gas is introduced upwards into the fluidized bed (3) through a valve grid (2), said stationary fluidized bed (3) containing solids with different grain sizes. A supply pipe (10) is disposed in the area of the fluidized bed, the mouth of said pipe being located above the valve grid (2) and its outlet (12) leading outwards from the fluidized bed (3). Part of the solids located above the valve grid (2) is blown into the supply pipe by a gas jet (13) which is directed upwards and fed separately from the fluidizing gas and pneumatically evacuated from the fluidized bed through the supply pipe (10). Normally, the flow speed of the gas in the supply pipe is at least two times higher than the speed of the fluidizing gas in the fluidized bed.
摘要翻译： 根据本发明，流化气体通过阀网格（2）向上引入流化床（3），所述固定流化床（3）含有不同晶粒尺寸的固体。 供给管（10）设置在流化床的区域中，所述管的口位于阀网格（2）的上方，以及从流化床（3）向外导出的出口（12）。 位于阀网格（2）上方的固体的一部分通过气体射流（13）吹送到供应管中，该气体射流（13）被引导向上并与流化气体分开供给，并通过供应管道（10）从流化床气动抽真空， 。 通常，供给管中的气体的流速比流化床中的流化气体的速度高至少两倍。
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公开(公告)号：US08038766B2
公开(公告)日：2011-10-18
申请号：US11569736
申请日：2005-05-20
申请人： Andreas Orth , Heinz Eichberger , Donald Keith Philp , Jeantine Van Gemund, legal representative , Rod Dry
发明人： Andreas Orth , Heinz Eichberger , Donald Keith Philp , Rod Dry
IPC分类号： C21B13/00
CPC分类号： C21B13/002 , C21B13/0033 , C21B2100/282 , C21B2100/44 , C21B2100/64 , C21B2100/66 , C22B5/14 , Y02P10/122 , Y02P10/126 , Y02P10/136
摘要： A direct reduction process for a metalliferous material includes supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into a fluidized bed in a vessel and maintaining the fluidized bed in the vessel, at least partially reducing metalliferous material in the vessel, and discharging a product stream that includes the partially reduced metalliferous material from the vessel. The process comprises (a) reducing the metalliferous material in a solid state in a metal-rich zone in the vessel; (b) injecting the oxygen-containing gas into a carbon-rich zone in the vessel with a downward flow in a range of ±40° to the vertical and generating heat by reactions between oxygen and the metalliferous material (including metallized material), the solid carbonaceous material and other oxidizable solids and gases in the fluidized bed, and (c) transferring heat from the carbon-rich zone to the metal-rich zone by movement of solids within the vessel. The metal-rich zone is formed in a lower section of the vessel and the carbon-rich zone is an intermediate section below an upper section of the vessel. Oxygen-containing gas is injected into a central region of the vessel.
摘要翻译： 用于含金属材料的直接还原方法包括将含金属材料，固体碳质材料，含氧气体和流化气体供应到容器中的流化床中并将流化床保持在容器中，至少部分地还原金属 并且从容器中排出包括部分还原的含金属材料的产物流。 该方法包括（a）在容器中的金属富集区中还原固态的含金属材料; （b）将含氧气体注入容器内的富含碳的区域，向下流动至垂直于±40°的范围，并通过氧气和含金属材料（包括金属化材料）之间的反应产生热量， 固体碳质材料和其它可氧化的固体和气体在流化床中，和（c）通过容器内的固体的移动将热量从富碳区转移到富含金属的区域。 金属富集区形成在容器的下部，富碳区是在容器的上部下方的中间部分。 将含氧气体注入容器的中心区域。
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公开(公告)号：US07824603B2
公开(公告)日：2010-11-02
申请号：US11569734
申请日：2005-05-20
申请人： Andreas Orth , Heinz Eichberger , Donald Keith Philp , Jeantine Van Gemund, legal representative , Rod Dry
发明人： Andreas Orth , Heinz Eichberger , Donald Keith Philp , Rod Dry
IPC分类号： C21B13/02
CPC分类号： C21B13/0033 , C21B13/146 , F27B15/10 , Y02P10/122 , Y02P10/126 , Y02P10/136
摘要： An apparatus for reducing a metalliferous material in a fluidized bed includes a vessel for containing the fluidized bed, a mechanism for supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into the vessel for forming the fluidized bed in the vessel. The oxygen-containing gas supply mechanism includes one or more than one oxygen-containing gas injection lance having a lance tip with an outlet that is positioned for injecting the oxygen-containing gas in a downward flow into the vessel within a range of plus or minus 40° to the vertical.
摘要翻译： 用于还原流化床中的含金属材料的装置包括用于容纳流化床的容器，用于将含金属材料，固体碳质材料，含氧气体和流化气体供应到用于形成流化床的容器中的机构 在船上的床。 含氧气体供给机构包括一个或多于一个的含氧气体注入喷枪，其具有喷枪头，其具有出口，该出口位于将含氧气体以向下流动的方式注入到容器内，该加载气体在正或负的范围内 40°垂直。
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公开(公告)号：US20080229881A1
公开(公告)日：2008-09-25
申请号：US11569740
申请日：2005-05-20
IPC分类号： C21B15/00
CPC分类号： C21B13/0033 , C22B5/10 , C22B5/14 , Y02P10/122 , Y02P10/126 , Y02P10/136 , Y02P10/216
摘要： A direct reduction process for a solid metalliferous material having a particle size distribution that at least in part contains micron sized particles includes supplying the metalliferous material, a solid carbonaceous material, an oxygen-containing gas, and a fluidizing gas into a fluidized bed in a vessel and maintaining the fluidized bed in the vessel, at least partially reducing metalliferous material in the vessel, and discharging a product stream that comprises the partially reduced metalliferous material from the vessel. The process includes (a) establishing and maintaining a carbon-rich zone within the fluidized bed; (b) passing metalliferous material, including metallized material (which term includes partially metallized material), through the carbon-rich zone; and (c) injecting the oxygen-containing gas into the carbon-rich zone and oxidizing metallized material, solid carbonaceous material and other oxidizable solids and gases and causing controlled agglomeration of particles.
摘要翻译： 具有至少部分包含微米级颗粒的粒度分布的固体含金属材料的直接还原方法包括将含金属材料，固体碳质材料，含氧气体和流化气体供应到流化床中 容器中并维持流化床，至少部分地还原容器中的含金属材料，以及从容器中排出包含部分还原的含金属材料的产物流。 该方法包括（a）在流化床内建立和维持富含碳的区域; （b）使含金属材料（包括金属化材料（该术语包括部分金属化材料））通过富碳区域; 和（c）将含氧气体注入富碳区并氧化金属化材料，固体碳质材料和其它可氧化的固体和气体并引起颗粒的受控的团聚。
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公开(公告)号：US20060278566A1
公开(公告)日：2006-12-14
申请号：US10540073
申请日：2003-12-01
申请人： Andreas Orth , Martin Hirsch , Peter Weber
发明人： Andreas Orth , Martin Hirsch , Peter Weber
摘要： The present invention relates to a method and a plant for producing low 15 temperature coke, in which granular coal and possibly further solids are heated to a temperature of 700 to 1050° C. in a fluidized-bed reactor (2) by means of an oxygen-containing gas. To improve the utilization of energy it is proposed to introduce a first gas or gas mixture from below through at least one gas supply tube (3) into a mixing chamber region (8) of the reactor (2), the gas supply tube (3) being at least partly surrounded by a stationary annular fluidized bed (6) which is fluidized by supplying fluidizing gas. The gas velocities of the first gas or gas mixture and of the fluidizing gas for the annular fluidized bed (6) are adjusted such that the Particle-Froude-Numbers in the gas supply tube (3) are between 1 and 100, in the annular fluidized bed (6) between 0.02 and 2 and in the 25 mixing chamber (8) between 0.3 and 30.
摘要翻译： 本发明涉及一种用于生产低温度焦炭的方法和设备，其中颗粒煤和可能的其它固体在流化床反应器（2）中通过以下方式加热至700至1050℃的温度： 含氧气体。 为了提高能量利用率，建议从下方将至少一个气体供给管（3）的第一气体或气体混合物引入反应器（2）的混合室区域（8），气体供给管（3） ）至少部分地被固定的环形流化床（6）包围，所述固定环形流化床通过供应流化气体而被流化。 调整第一气体或气体混合物和用于环形流化床（6）的流化气体的气体速度，使得气体供应管（3）中的“微粒 - 弗劳德数”为1至100，在环形 流化床（6）在0.02和2之间，在25混合室（8）中在0.3和30之间。
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公开(公告)号：US07144770B2
公开(公告)日：2006-12-05
申请号：US10980069
申请日：2004-11-03
IPC分类号： H01L21/8242
CPC分类号： H01L29/66181 , H01L29/945
摘要： The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).
摘要翻译： 本发明提供了一种用于制造存储单元的方法，提供了一种衬底（101），蚀刻到衬底（101）中的沟槽型凹陷（102），在沟槽中非保形地沉积的阻挡层（103） 型凹陷（102），在沟槽型凹部（102）的内部区域上生长的晶粒元素（104），沉积在晶粒元素的表面上的介电层（202）和沟槽的内部区域 型凹陷，并且导电层沉积在电介质层上，晶粒元素（104）选择性地生长在形成下部区域的电极区域（301）中的沟槽型凹陷（102）的内部区域（105） 的沟槽型凹陷（102）和在形成沟槽型凹陷（102）的上部区域的凸缘区域（302）中继续生长的非晶硅层。
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公开(公告)号：US06511646B1
公开(公告)日：2003-01-28
申请号：US09601869
申请日：2001-01-12
申请人： Barry Neil Hooper , Martin Hirsch , Andreas Orth , Brian Bennett , John Frank Davidson , Martin Conduit , Neil Fallon , Peter John Davidson
发明人： Barry Neil Hooper , Martin Hirsch , Andreas Orth , Brian Bennett , John Frank Davidson , Martin Conduit , Neil Fallon , Peter John Davidson
IPC分类号： C01B703
摘要： A process for producing chlorine and iron oxide from iron chloride (which may be generated as a by-product of the direct chlorination of titaniferous ores) comprises the steps of converting ferrous chloride to ferric chloride by reaction with chlorine, separating the solids from the gaseous products, reacting the gaseous ferric chloride with oxygen, condensing unreacted ferric chloride onto iron oxide particles, separating the gaseous products from the iron oxide particles and recycling the iron oxide particles to the oxidation or condensation step.
摘要翻译： 从氯化铁（其可以作为含钛矿石的直接氯化的副产物）产生氯和氧化铁的方法包括以下步骤：通过与氯反应将氯化亚铁转化为氯化铁，将固体与气体分离 产物，使气态氯化铁与氧反应，将未反应的氯化铁冷凝到氧化铁颗粒上，将气态产物与氧化铁颗粒分离，并将氧化铁颗粒再循环到氧化或冷凝步骤。
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