FIELD EFFECT TRANSISTOR WITH A FIN STRUCTURE
    11.
    发明申请
    FIELD EFFECT TRANSISTOR WITH A FIN STRUCTURE 有权
    具有结构的场效应晶体管

    公开(公告)号:US20080111163A1

    公开(公告)日:2008-05-15

    申请号:US11559656

    申请日:2006-11-14

    摘要: A field effect transistor with a fin structure having a first and a second source/drain region; a body region formed within the fin structure and between the first and the second source/drain region; a metallically conductive region formed within a part of the first source/drain region, the metallically conductive region being adjacent to the body region or to a lightly doped region disposed between the body region and the first source/drain region; and a current ballasting region formed within a part of the second source/drain region.

    摘要翻译: 一种具有鳍结构的场效应晶体管,具有第一和第二源极/漏极区域; 形成在所述鳍结构内并且在所述第一和第二源极/漏极区之间的体区; 形成在所述第一源极/漏极区域的一部分内的金属导电区域,所述金属导电区域邻近所述体区域或者设置在所述体区域和所述第一源极/漏极区域之间的轻掺杂区域; 以及形成在第二源极/漏极区域的一部分内的电流镇流区域。

    Semiconductor Device With Cooling Element
    12.
    发明申请
    Semiconductor Device With Cooling Element 有权
    带冷却元件的半导体器件

    公开(公告)号:US20100163995A1

    公开(公告)日:2010-07-01

    申请号:US12720700

    申请日:2010-03-10

    IPC分类号: H01L29/786 H01L21/336

    摘要: Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed

    摘要翻译: 本文讨论的一些实施例包括具有源极区域,漏极区域和翅片阵列的半导体,其可操作地耦合到栅极区域,以控制流过源极区域和漏极区域之间的鳍片的电流。 所述半导体还具有至少一部分形成有至少部分热容量等于或大于所述源极区域,漏极区域和散热片阵列的热容量的冷却元件的冷却元件,所述冷却元件处于闭合状态 靠近与阵列的鳍片,源极区域和漏极区域电隔离的翅片阵列的翅片。 还公开了其他实施例

    Field effect transistor with a fin structure
    13.
    发明授权
    Field effect transistor with a fin structure 有权
    具有翅片结构的场效应晶体管

    公开(公告)号:US07646046B2

    公开(公告)日:2010-01-12

    申请号:US11559656

    申请日:2006-11-14

    IPC分类号: H01L29/78

    摘要: A field effect transistor with a fin structure having a first and a second source/drain region; a body region formed within the fin structure and between the first and the second source/drain region; a metallically conductive region formed within a part of the first source/drain region, the metallically conductive region being adjacent to the body region or to a lightly doped region disposed between the body region and the first source/drain region; and a current ballasting region formed within a part of the second source/drain region.

    摘要翻译: 一种具有鳍结构的场效应晶体管,具有第一和第二源极/漏极区域; 形成在所述鳍结构内并且在所述第一和第二源极/漏极区之间的体区; 形成在所述第一源极/漏极区域的一部分内的金属导电区域,所述金属导电区域邻近所述体区域或者设置在所述体区域和所述第一源极/漏极区域之间的轻掺杂区域; 以及形成在第二源极/漏极区域的一部分内的电流镇流区域。

    Method for producing a thyristor
    14.
    发明授权
    Method for producing a thyristor 有权
    晶闸管的制造方法

    公开(公告)号:US08450156B2

    公开(公告)日:2013-05-28

    申请号:US13481969

    申请日:2012-05-29

    IPC分类号: H01L21/332

    摘要: In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.

    摘要翻译: 在晶闸管的制造方法中,在基板上或上方形成有第一和第二连接区域, 第一连接区域掺杂有第一导电类型的掺杂剂原子,并且第二连接区域掺杂有第二导电类型的掺杂剂原子; 第一和第二体区域形成在连接区域之间,其中第一体区形成在第一连接区域和第二体区域之间,第二体区域形成在第一体区域和第二连接区域之间; 所述第一体区掺杂有所述第二导电类型的掺杂剂原子,并且所述第二体区掺杂有所述第一导电类型的掺杂剂原子,其中所述掺杂剂原子在每种情况下使用Vt注入方法引入相应的体区; 在身体区域上或上方形成栅极区域。

    Method for producing a thyristor
    15.
    发明申请
    Method for producing a thyristor 有权
    晶闸管的制造方法

    公开(公告)号:US20120252172A1

    公开(公告)日:2012-10-04

    申请号:US13481969

    申请日:2012-05-29

    IPC分类号: H01L21/332

    摘要: In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.

    摘要翻译: 在晶闸管的制造方法中,在基板上或上方形成有第一和第二连接区域, 第一连接区域掺杂有第一导电类型的掺杂剂原子,并且第二连接区域掺杂有第二导电类型的掺杂剂原子; 第一和第二体区域形成在连接区域之间,其中第一体区形成在第一连接区域和第二体区域之间,第二体区域形成在第一体区域和第二连接区域之间; 所述第一体区掺杂有所述第二导电类型的掺杂剂原子,并且所述第二体区掺杂有所述第一导电类型的掺杂剂原子,其中所述掺杂剂原子在每种情况下都使用Vt注入法引入所述体区; 在身体区域上或上方形成栅极区域。

    Method for producing a thyristor
    16.
    发明授权
    Method for producing a thyristor 有权
    晶闸管的制造方法

    公开(公告)号:US08236624B2

    公开(公告)日:2012-08-07

    申请号:US12620930

    申请日:2009-11-18

    IPC分类号: H01L21/332

    摘要: In a method for producing an electronic component, a first doped connection region and a second doped connection region are formed on or above a substrate; a body region is formed between the first doped connection region and the second doped connection region; at least two gate regions separate from one another are formed on or above the body region; at least one partial region of the body region is doped by means of introducing dopant atoms, wherein the dopant atoms are introduced into the at least one partial region of the body region through at least one intermediate region formed between the at least two separate gate regions.

    摘要翻译: 在电子部件的制造方法中,在基板上或上方形成第一掺杂连接区域和第二掺杂连接区域, 在所述第一掺杂连接区域和所述第二掺杂连接区域之间形成体区; 在身体区域上或上方形成彼此分离的至少两个栅极区域; 通过引入掺杂剂原子来掺杂体区的至少一个部分区域,其中通过形成在至少两个分开的栅极区域之间的至少一个中间区域将掺杂剂原子引入到体区的至少一个部分区域中 。

    method and devices for operating a heatable exhaust-gas sensor
    17.
    发明申请
    method and devices for operating a heatable exhaust-gas sensor 有权
    用于操作可加热废气传感器的方法和装置

    公开(公告)号:US20150114848A1

    公开(公告)日:2015-04-30

    申请号:US14388141

    申请日:2013-02-14

    IPC分类号: G01N27/403 G01M15/10

    摘要: In a method for operating a heatable exhaust-gas sensor, which supplies at least one measuring signal and in which a sensor heater is operated using a pulse-width modulated operating voltage, the detection of the at least one measuring signal has priority over the supply of the pulse-width modulated operating voltage for sensor heater, and at least during a predefined time window in which the measuring signal is detected, the supply of the pulse-width modulated operating voltage for the sensor heater is suppressed using a blocking signal.

    摘要翻译: 在用于操作提供至少一个测量信号并且其中传感器加热器使用脉冲宽度调制工作电压来操作的可加热排气传感器的方法中,所述至少一个测量信号的检测优先于供给 的传感器加热器的脉冲宽度调制工作电压,并且至少在检测到测量信号的预定时间窗口期间,使用阻塞信号抑制传感器加热器的脉冲宽度调制工作电压的供给。

    Light barrier
    18.
    发明授权
    Light barrier 有权
    光屏障

    公开(公告)号:US08248619B2

    公开(公告)日:2012-08-21

    申请号:US12654048

    申请日:2009-12-08

    IPC分类号: G01B11/14

    CPC分类号: G01V8/14

    摘要: A light barrier detects an object which interrupts a beam of light of the light barrier. A light transmitter transmits a light beam in the direction of a reflector and a light receiver receives a reflected portion of the light beam. The improved light barrier has a reflector which is made as a cylindrical reflector column having a plurality of retroreflecting elements aligned toward the outer surface. The diameter of the reflector column is considerably smaller than the extent of the light beam perpendicular to the cylinder axis so that an optically effective detection beam of light is formed between the sensor and the reflector column whose cross-section at the sensor is determined by the light transmitter and, in direct proximity to the reflector column. The cross-section is determined by the areal overlap of the light beam with the reflector column.

    摘要翻译: 光屏障检测中断光栅的光束的物体。 光发射器沿反射器的方向透射光束,并且光接收器接收光束的反射部分。 改进的光栅具有反射器,其被制成具有朝向外表面排列的多个回射元件的圆柱形反射器柱。 反射器柱的直径比垂直于气缸轴线的光束的范围小得多,从而在传感器和反射器柱之间形成光学有效的检测光束,其中传感器的横截面由 光发射器,并且与反射器柱直接接近。 横截面由光束与反射器柱的面重叠确定。

    Feature Patterning Methods and Structures Thereof
    20.
    发明申请
    Feature Patterning Methods and Structures Thereof 有权
    特征图案化方法及结构

    公开(公告)号:US20110215479A1

    公开(公告)日:2011-09-08

    申请号:US13096802

    申请日:2011-04-28

    IPC分类号: H01L23/48

    摘要: Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.

    摘要翻译: 公开了图形特征的方法,制造半导体器件的方法和半导体器件。 在一个实施例中,图案化特征的方法包括在第一材料层中形成特征的第一部分。 特征的第二部分形成在第一材料层中,并且特征的第三部分形成在第二材料层中。