公开(公告)号：US20090233420A1

公开(公告)日：2009-09-17

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/322

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对p型硅晶片进行热处理，其电阻率为10Ω·cm以上，BMD密度为5×10 7个/ cm 3以上，n型杂质浓度为1×10 14原子/ cm 3以下 距离晶片表面5微米以内的深度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US20080020514A1

公开(公告)日：2008-01-24

申请号：US11880144

申请日：2007-07-20

申请人： Hidehiko Okuda ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Tatsumi Kusaba

IPC分类号： H01L21/02

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。

公开(公告)号：US07939441B2

公开(公告)日：2011-05-10

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/425

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对该p型硅晶片进行热处理，电阻率为10Ω·cm·cm以上，BMD密度为5×10 7缺陷/ cm 3以上，n型杂质浓度为1×10 14原子/ 在距离晶片表面5μm以下的深度处。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US07745306B2

公开(公告)日：2010-06-29

申请号：US11880144

申请日：2007-07-20

申请人： Hidehiko Okuda ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Tatsumi Kusaba

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。

公开(公告)号：US07541663B2

公开(公告)日：2009-06-02

申请号：US11200233

申请日：2005-08-10

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L29/861

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对p型硅晶片进行热处理，其电阻率为10Ω·cm以上，BMD密度为5×10 7个/ cm 3以上，n型杂质浓度为1×10 14原子/ cm 3以下 距离晶片表面5微米以内的深度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在经过热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US07311775B2

公开(公告)日：2007-12-25

申请号：US11196480

申请日：2005-08-04

申请人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

发明人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B29/06 ,  C30B33/02

摘要： This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1×1010 atoms/cm3 or less.

摘要翻译： 该硅晶片的热处理方法包括：在氢气，氩气或其混合物的环境气体气氛中对硅晶片进行高温热处理的步骤; 以及在含氮气体的环境气氛中以2℃/分钟以下的速度将温度降低的一部分或全部将温度降低到所述高温下的晶片去除温度的工序 热处理。 该硅晶片具有通过高温热处理形成的无缺陷层，并且包括在其表面中，其中所述表面中的平均铁浓度为1×10 10原子/ cm 2 > 3 以下。

公开(公告)号：US20100144131A1

公开(公告)日：2010-06-10

申请号：US12630604

申请日：2009-12-03

申请人： Hidehiko Okuda

发明人： Hidehiko Okuda

IPC分类号： H01L21/762

CPC分类号： H01L21/76256

摘要： A bonded wafer is produced by a step of forming an oxygen ion implanted layer, a step of forming a wafer composite, a step of exposing the oxygen ion implanted layer, and a step of obtaining an active layer, wherein the exposed oxygen ion implanted layer is removed by sequentially subjecting to a first HF treatment, a given oxidation heat treatment, and then a second HF treatment.

摘要翻译： 通过形成氧离子注入层的步骤，形成晶片复合体的步骤，暴露氧离子注入层的步骤和获得有源层的步骤来制造键合晶片，其中暴露的氧离子注入层 通过依次进行第一HF处理，给定的氧化热处理，然后进行第二次HF处理来除去。

公开(公告)号：US20060027897A1

公开(公告)日：2006-02-09

申请号：US11200233

申请日：2005-08-10

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L29/167 ,  H01L29/30

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对该p型硅晶片进行热处理以具有10Ω·cm或更大的电阻率，5×10 7缺陷/ cm 3或更高的BMD密度， 并且在离晶片表面5微米深度的1×10 14原子/ cm 3或更小的n型杂质浓度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在经过热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US20060027161A1

公开(公告)日：2006-02-09

申请号：US11196480

申请日：2005-08-04

申请人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

发明人： Tatsumi Kusaba ,  Hidehiko Okuda ,  Yoshihisa Nonogaki

IPC分类号： C30B28/14 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B29/06 ,  C30B33/02

摘要： This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1×1010 atoms/cm3 or less.

摘要翻译： 该硅晶片的热处理方法包括：在氢气，氩气或其混合物的环境气体气氛中对硅晶片进行高温热处理的步骤; 以及在含氮气体的环境气氛中以2℃/分钟以下的速度将温度降低的一部分或全部将温度降低到所述高温下的晶片去除温度的工序 热处理。 该硅晶片具有通过高温热处理形成的无缺陷层，并且包括在其表面中，其中所述表面中的平均铁浓度为1×10 10原子/ cm 2 > 3 以下。