公开(公告)号：US20090233420A1

公开(公告)日：2009-09-17

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/322

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对p型硅晶片进行热处理，其电阻率为10Ω·cm以上，BMD密度为5×10 7个/ cm 3以上，n型杂质浓度为1×10 14原子/ cm 3以下 距离晶片表面5微米以内的深度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US20090186464A1

公开(公告)日：2009-07-23

申请号：US12321725

申请日：2009-01-22

申请人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Hideki Nishihata ,  Hidehiko Okuda ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/304 ,  H01L21/30608 ,  H01L21/30625 ,  H01L21/6835 ,  H01L21/76243 ,  H01L21/76254 ,  H01L2221/68363

摘要： In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions.

摘要翻译： 在通过将活性层用晶片与支撑层用晶片接合而制造接合晶片的方法中，将活性层用晶片进行稀释时，将氧离子注入有源层用晶片时，将注入工序分为两个阶段 在规定条件下进行。

公开(公告)号：US07416960B2

公开(公告)日：2008-08-26

申请号：US11855754

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。

公开(公告)号：US20080020514A1

公开(公告)日：2008-01-24

申请号：US11880144

申请日：2007-07-20

申请人： Hidehiko Okuda ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Tatsumi Kusaba

IPC分类号： H01L21/02

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。

公开(公告)号：US20080014717A1

公开(公告)日：2008-01-17

申请号：US11855754

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

公开(公告)号：US07939441B2

公开(公告)日：2011-05-10

申请号：US12427442

申请日：2009-04-21

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L21/425

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对该p型硅晶片进行热处理，电阻率为10Ω·cm·cm以上，BMD密度为5×10 7缺陷/ cm 3以上，n型杂质浓度为1×10 14原子/ 在距离晶片表面5μm以下的深度处。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。

公开(公告)号：US07767549B2

公开(公告)日：2010-08-03

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

发明人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US07745306B2

公开(公告)日：2010-06-29

申请号：US11880144

申请日：2007-07-20

申请人： Hidehiko Okuda ,  Tatsumi Kusaba

发明人： Hidehiko Okuda ,  Tatsumi Kusaba

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.

摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。

公开(公告)号：US20080014716A1

公开(公告)日：2008-01-17

申请号：US11855736

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。

公开(公告)号：US07541663B2

公开(公告)日：2009-06-02

申请号：US11200233

申请日：2005-08-10

申请人： Tatsumi Kusaba ,  Hidehiko Okuda

发明人： Tatsumi Kusaba ,  Hidehiko Okuda

IPC分类号： H01L29/861

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107 defects/cm3 or more, and an n-type impurity concentration of 1×1014 atoms/cm3 or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

摘要翻译： 对p型硅晶片进行热处理，其电阻率为10Ω·cm以上，BMD密度为5×10 7个/ cm 3以上，n型杂质浓度为1×10 14原子/ cm 3以下 距离晶片表面5微米以内的深度。 这种用于热处理p型硅晶片的方法，该方法包括以下步骤：将p型硅晶片装载到晶片舟皿上，插入立式炉中，并在氩气环境气氛中保持在1100〜 1300℃1小时; 将晶片舟移动到转移室并排出硅晶片; 并转移到接下来要进行热处理的晶片舟状硅晶片上，其中在经过热处理的硅晶片放电之后，接下来要热处理的硅晶片在小于2小时的等待时间内转移到晶片舟皿 。