公开(公告)号：US4223330A

公开(公告)日：1980-09-16

申请号：US5567

申请日：1979-01-22

申请人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Masaharu Kubo ,  Shuhei Tanaka

发明人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Masaharu Kubo ,  Shuhei Tanaka

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/374 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L27/14654

摘要： In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.

摘要翻译： 在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中，垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体 选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路，其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管 未选择的位置被置于更深的截止状态，即，对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

公开(公告)号：US4413283A

公开(公告)日：1983-11-01

申请号：US332933

申请日：1981-12-21

申请人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

发明人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

IPC分类号： H04N9/07 ,  H04N9/04 ,  H04N3/14

CPC分类号： H04N9/045 ,  H04N3/1512

摘要： A solid-state imaging device comprises a plurality of photodiodes arranged in a matrix form in the same semiconductor substrate, horizontal and vertical switching elements for selecting the photodiodes, horizontal and vertical shift registers for supplying scan pulses to the horizontal and vertical switching elements, and an interlace circuit for simultaneously selecting two vertical gate lines to simultaneously read two picture element rows. A buffer circuit is inserted between the interlace circuit and the vertical gate lines for changing a potential level of one of the two selected vertical gate lines from a high level to a low level prior to changing the potential level of the other vertical gate line.

摘要翻译： 固态成像装置包括在同一半导体衬底中以矩阵形式布置的多个光电二极管，用于选择光电二极管的水平和垂直开关元件，用于向水平和垂直开关元件提供扫描脉冲的水平和垂直移位寄存器，以及 用于同时选择两条垂直栅极线以同时读取两个像素行的隔行电路。 在隔行电路和垂直栅极线之间插入缓冲电路，用于在改变另一垂直栅极线的电位电平之前将两个所选择的垂直栅极线之一的电位电平从高电平改变为低电平。

公开(公告)号：US4316205A

公开(公告)日：1982-02-16

申请号：US119383

申请日：1980-02-07

申请人： Masakazu Aoki ,  Iwao Takemoto ,  Masaharu Kubo ,  Ryuichi Izawa

发明人： Masakazu Aoki ,  Iwao Takemoto ,  Masaharu Kubo ,  Ryuichi Izawa

IPC分类号： H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L31/1136 ,  H01L27/14643

摘要： In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.

摘要翻译： 在具有单片半导体主体的一个主表面区域的固态成像装置中，以二维排列的光电二极管，构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管，构成垂直和水平扫描电路的MOS晶体管 为了使开关MOS晶体管“开”和“关”，构成其它外围电路的MOS晶体管，该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置，其特征在于，在各种MOS晶体管的源极和漏极区域中，垂直开关MOS晶体管的源极区域的表面杂质浓度较低，并且结深度比其他源极和漏极区域更深。

公开(公告)号：US4301477A

公开(公告)日：1981-11-17

申请号：US120115

申请日：1980-02-11

申请人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

发明人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N5/30 ,  H04N3/14

CPC分类号： H04N5/2173 ,  H01L27/14643 ,  H04N3/1568

摘要： In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.

摘要翻译： 在包括以二维阵列布置的光电二极管的固态成像装置中，用于选择光电二极管的垂直和水平切换MOS晶体管，分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路 信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。

公开(公告)号：US4621291A

公开(公告)日：1986-11-04

申请号：US462763

申请日：1983-02-01

申请人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

发明人： Iwao Takemoto ,  Shinya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Takuya Imaide

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N3/1568

摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.

摘要翻译： 本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。 根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置 在信号传输之前的垂直信号线处于参考电位。 连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。 因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

公开(公告)号：US4392158A

公开(公告)日：1983-07-05

申请号：US257461

申请日：1981-04-24

申请人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Shoji Hanamura ,  Iwao Takemoto ,  Ryuichi Izawa

发明人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Shoji Hanamura ,  Iwao Takemoto ,  Ryuichi Izawa

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/359 ,  H04N5/374 ,  H04N3/14

CPC分类号： H04N3/1512 ,  H01L27/14643

摘要： In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.

摘要翻译： 在具有在相同的半导体主体上二维排列的多个光电二极管的固态成像装置中，一组水平切换元件和一组拾取光电二极管的垂直开关元件，以及水平扫描电路和 垂直扫描电路，其分别在水平和垂直开关元件上施加扫描脉冲，并且具有隔行扫描机构，其通过隔行扫描开关元件拾取多条垂直扫描线，以允许水平扫描多条扫描线的扫描线 行 一种固态成像装置，其特征在于，所述隔行扫描机构包括绝缘栅场效应晶体管，用于恢复由于交错开关元件而经历电压降的扫描脉冲的电压电平。

公开(公告)号：US4335406A

公开(公告)日：1982-06-15

申请号：US163298

申请日：1980-06-26

申请人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

发明人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N3/15

CPC分类号： H04N5/2173

摘要： This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.

摘要翻译： 本发明提供一种使用具有固定间隔时间的不连续扫描脉冲的固态成像装置的信号处理电路，以及具有高性能的固定图案噪声消除电路。 在本发明的信号处理电路中，开关元件设置在信号放大器（例如前置放大器）的反馈电路中，并在信号放大器的输出端设置，从而抑制固定图案噪声，从而达到 高信噪比。

公开(公告)号：US4551742A

公开(公告)日：1985-11-05

申请号：US640570

申请日：1984-08-14

申请人： Iwao Takemoto ,  Shiya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Masao Tamura ,  Masanobu Miyao

发明人： Iwao Takemoto ,  Shiya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/14 ,  H04N5/335 ,  H04N5/359 ,  H04N5/374 ,  H04N9/07

CPC分类号： H01L27/14654

摘要： A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.

摘要翻译： 固态成像装置具有由光电转换元件和MOS晶体管作为开关元件构成并以矩阵形式配置的像素。 扫描机构顺序地扫描像素以顺序地读出光电转换信号。 为了消除污迹并降低寄生电容，在用于隔离元件的绝缘体层上形成用作构成像素的MOS晶体管的输出端的高杂质浓度扩散层。

公开(公告)号：US4456929A

公开(公告)日：1984-06-26

申请号：US385005

申请日：1982-06-04

申请人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

发明人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/365 ,  H04N5/374 ,  H04N3/15

CPC分类号： H04N3/1568

摘要： In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second semiconductor layer including a horizontal shift register for selecting the horizontal switching elements, a third semiconductor layer including a vertical shift register for selecting the vertical switching elements, the first, second and third semiconductor layers are insulated from each other, and gate voltage V.sub.SMOS.L impressed upon a gate electrode of a not selected horizontal switching element is made to satisfy a relation V.sub.SMOS.L .gtoreq.V.sub.WPD +F.sub.FB where V.sub.WPD represents a potential of the first semiconductor layer, and V.sub.FB a flat band voltage beneath gate electrodes of the horizontal switching elements.

摘要翻译： 在包括包括光电转换元件阵列的第一半导体层和适于选择光电转换元件的垂直和水平开关元件的类型的固态图像拾取装置中，包括水平移位寄存器的第二半导体层， 水平开关元件，包括用于选择垂直开关元件的垂直移位寄存器的第三半导体层，第一，第二和第三半导体层彼此绝缘，并且栅极电压VSMOS.L施加在未选择的水平的栅电极 使开关元件满足VSMOS.L> / = VWPD + FFB的关系，其中VWPD表示第一半导体层的电位，VFB是水平开关元件的栅电极下方的平带电压。

公开(公告)号：US4349743A

公开(公告)日：1982-09-14

申请号：US206865

申请日：1980-11-14

申请人： Shinya Ohba ,  Shoji Hanamura ,  Toshifumi Ozaki ,  Masaharu Kubo ,  Masaaki Nakai ,  Kenji Takahashi ,  Masakazu Aoki ,  Iwao Takemoto ,  Haruhisa Ando ,  Ryuichi Izawa

发明人： Shinya Ohba ,  Shoji Hanamura ,  Toshifumi Ozaki ,  Masaharu Kubo ,  Masaaki Nakai ,  Kenji Takahashi ,  Masakazu Aoki ,  Iwao Takemoto ,  Haruhisa Ando ,  Ryuichi Izawa

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N3/14 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/365 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

CPC分类号： H01L27/14643 ,  H04N3/1512 ,  H04N3/1568

摘要： A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.

摘要翻译： 一种固态成像装置，其中MOS传感器用于光电传感器部分，CTD移位寄存器用于读出电路，第一和第二传输门连接在垂直信号输出线和CTD之间，复位门 连接在第一和第二传输门的接合点与复位电压线之间。 采用在水平消隐期间将多行的信号输出传送到CTD的方法，并且在水平扫描期间同时读出多行的信号。 在信号传输中，偏置电荷从CTD倾倒到垂直信号输出线路中，由偏置电荷和信号电荷组成的混合电荷转移到CTD。 此后，读出信号。