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公开(公告)号:US4316205A
公开(公告)日:1982-02-16
申请号:US119383
申请日:1980-02-07
申请人: Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
发明人: Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
IPC分类号: H01L27/146 , H01L31/113 , H04N5/335 , H04N5/374 , H01L27/14
CPC分类号: H01L31/1136 , H01L27/14643
摘要: In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.
摘要翻译: 在具有单片半导体主体的一个主表面区域的固态成像装置中,以二维排列的光电二极管,构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管,构成垂直和水平扫描电路的MOS晶体管 为了使开关MOS晶体管“开”和“关”,构成其它外围电路的MOS晶体管,该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置,其特征在于,在各种MOS晶体管的源极和漏极区域中,垂直开关MOS晶体管的源极区域的表面杂质浓度较低,并且结深度比其他源极和漏极区域更深。
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公开(公告)号:US4349743A
公开(公告)日:1982-09-14
申请号:US206865
申请日:1980-11-14
申请人: Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
发明人: Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
IPC分类号: H01L27/14 , H01L27/146 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号: H01L27/14643 , H04N3/1512 , H04N3/1568
摘要: A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.
摘要翻译: 一种固态成像装置,其中MOS传感器用于光电传感器部分,CTD移位寄存器用于读出电路,第一和第二传输门连接在垂直信号输出线和CTD之间,复位门 连接在第一和第二传输门的接合点与复位电压线之间。 采用在水平消隐期间将多行的信号输出传送到CTD的方法,并且在水平扫描期间同时读出多行的信号。 在信号传输中,偏置电荷从CTD倾倒到垂直信号输出线路中,由偏置电荷和信号电荷组成的混合电荷转移到CTD。 此后,读出信号。
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公开(公告)号:US4295055A
公开(公告)日:1981-10-13
申请号:US46028
申请日:1979-06-06
申请人: Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人: Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
CPC分类号: H03K5/15093 , G11C19/184 , G11C19/28
摘要: A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译: 一种用于产生扫描脉冲的电路,包括串联连接的多级基本电路,所述每个基本电路包括第一,第二和第三绝缘栅极场效应晶体管(MIST),每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子,所述第一MIST的所述栅极端子用作输入端子,所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子,所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子,所述第三MIST的所述第二端子 被用作接地端子,所述第三MIST的所述栅极端子用作反馈输入端子。
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公开(公告)号:US4392158A
公开(公告)日:1983-07-05
申请号:US257461
申请日:1981-04-24
申请人: Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Shoji Hanamura , Iwao Takemoto , Ryuichi Izawa
发明人: Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Shoji Hanamura , Iwao Takemoto , Ryuichi Izawa
CPC分类号: H04N3/1512 , H01L27/14643
摘要: In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.
摘要翻译: 在具有在相同的半导体主体上二维排列的多个光电二极管的固态成像装置中,一组水平切换元件和一组拾取光电二极管的垂直开关元件,以及水平扫描电路和 垂直扫描电路,其分别在水平和垂直开关元件上施加扫描脉冲,并且具有隔行扫描机构,其通过隔行扫描开关元件拾取多条垂直扫描线,以允许水平扫描多条扫描线的扫描线 行 一种固态成像装置,其特征在于,所述隔行扫描机构包括绝缘栅场效应晶体管,用于恢复由于交错开关元件而经历电压降的扫描脉冲的电压电平。
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公开(公告)号:US4301477A
公开(公告)日:1981-11-17
申请号:US120115
申请日:1980-02-11
申请人: Iwao Takemoto , Masaharu Kubo , Shinya Ohba , Shuhei Tanaka , Masakazu Aoki
发明人: Iwao Takemoto , Masaharu Kubo , Shinya Ohba , Shuhei Tanaka , Masakazu Aoki
CPC分类号: H04N5/2173 , H01L27/14643 , H04N3/1568
摘要: In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.
摘要翻译: 在包括以二维阵列布置的光电二极管的固态成像装置中,用于选择光电二极管的垂直和水平切换MOS晶体管,分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路 信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。
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公开(公告)号:US4335406A
公开(公告)日:1982-06-15
申请号:US163298
申请日:1980-06-26
申请人: Shinya Ohba , Masaharu Kubo , Iwao Takemoto , Shoji Hanamura , Masakazu Aoki
发明人: Shinya Ohba , Masaharu Kubo , Iwao Takemoto , Shoji Hanamura , Masakazu Aoki
IPC分类号: H01L27/146 , H04N5/335 , H04N5/365 , H04N5/374 , H04N3/15
CPC分类号: H04N5/2173
摘要: This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.
摘要翻译: 本发明提供一种使用具有固定间隔时间的不连续扫描脉冲的固态成像装置的信号处理电路,以及具有高性能的固定图案噪声消除电路。 在本发明的信号处理电路中,开关元件设置在信号放大器(例如前置放大器)的反馈电路中,并在信号放大器的输出端设置,从而抑制固定图案噪声,从而达到 高信噪比。
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公开(公告)号:US4277799A
公开(公告)日:1981-07-07
申请号:US923982
申请日:1978-07-12
申请人: Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
发明人: Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
IPC分类号: H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/372 , H04N5/374 , H04N9/04 , H04N9/07
CPC分类号: H01L27/14643 , H01L27/14645 , H04N3/1512 , H04N9/045
摘要: A color solid-state imaging device is provided with a plurality of signal output lines for reading out signals derived from photoelectric conversion elements which form picture elements for red, green, and blue lights arranged in, for example, a checkered pattern.
摘要翻译: 彩色固态成像装置设置有多条信号输出线,用于读出从形成例如格子图案的红色,绿色和蓝色光的图像元素的光电转换元件导出的信号。
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公开(公告)号:US4032952A
公开(公告)日:1977-06-28
申请号:US347426
申请日:1973-04-03
申请人: Shinya Ohba , Iwao Takemoto , Masaharu Kubo
发明人: Shinya Ohba , Iwao Takemoto , Masaharu Kubo
IPC分类号: H01L29/10 , H01L29/768 , H01L
CPC分类号: H01L29/7685 , H01L29/1062 , H01L29/76833 , H01L29/76841 , Y10S148/08
摘要: In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.
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公开(公告)号:US4148051A
公开(公告)日:1979-04-03
申请号:US874939
申请日:1978-02-03
申请人: Norio Koike , Iwao Takemoto , Masaharu Kubo
发明人: Norio Koike , Iwao Takemoto , Masaharu Kubo
IPC分类号: H01L21/8234 , H01L27/146 , H01L31/113 , H04N5/335 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号: H01L31/1136 , H01L21/823406 , H01L27/14643 , H01L27/14645
摘要: In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.
摘要翻译: 在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中,其特征在于至少一个 窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内,所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面,并且由所述半导体区域的一部分 所述半导体衬底。
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公开(公告)号:US4514766A
公开(公告)日:1985-04-30
申请号:US482791
申请日:1983-04-07
申请人: Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
发明人: Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
IPC分类号: H04N5/345 , H04N5/372 , H04N5/3728 , H04N3/15
CPC分类号: H04N3/1575 , H01L27/14856 , H04N3/1537
摘要: A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.
摘要翻译: 提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。 成像装置的特征在于,布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。 这导致设备的分辨率急剧增加。
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