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    Solid-state imaging device
    1.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4335406A

    公开(公告)日：1982-06-15

    申请号：US163298

    申请日：1980-06-26

    申请人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

    发明人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N3/15

    CPC分类号： H04N5/2173

    摘要： This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.

    摘要翻译： 本发明提供一种使用具有固定间隔时间的不连续扫描脉冲的固态成像装置的信号处理电路，以及具有高性能的固定图案噪声消除电路。 在本发明的信号处理电路中，开关元件设置在信号放大器（例如前置放大器）的反馈电路中，并在信号放大器的输出端设置，从而抑制固定图案噪声，从而达到 高信噪比。

    Interlaced solid-state imaging device
    3.
    发明授权
    Interlaced solid-state imaging device 失效
    隔行固态成像装置

    公开(公告)号：US4392158A

    公开(公告)日：1983-07-05

    申请号：US257461

    申请日：1981-04-24

    申请人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Shoji Hanamura ,  Iwao Takemoto ,  Ryuichi Izawa

    发明人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Shoji Hanamura ,  Iwao Takemoto ,  Ryuichi Izawa

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/359 ,  H04N5/374 ,  H04N3/14

    CPC分类号： H04N3/1512 ,  H01L27/14643

    摘要： In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.

    摘要翻译： 在具有在相同的半导体主体上二维排列的多个光电二极管的固态成像装置中，一组水平切换元件和一组拾取光电二极管的垂直开关元件，以及水平扫描电路和 垂直扫描电路，其分别在水平和垂直开关元件上施加扫描脉冲，并且具有隔行扫描机构，其通过隔行扫描开关元件拾取多条垂直扫描线，以允许水平扫描多条扫描线的扫描线 行 一种固态成像装置，其特征在于，所述隔行扫描机构包括绝缘栅场效应晶体管，用于恢复由于交错开关元件而经历电压降的扫描脉冲的电压电平。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4301477A

    公开(公告)日：1981-11-17

    申请号：US120115

    申请日：1980-02-11

    申请人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

    发明人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N5/30 ,  H04N3/14

    CPC分类号： H04N5/2173 ,  H01L27/14643 ,  H04N3/1568

    摘要： In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.

    摘要翻译： 在包括以二维阵列布置的光电二极管的固态成像装置中，用于选择光电二极管的垂直和水平切换MOS晶体管，分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路 信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。

    Circuit for generating scanning pulses
    6.
    发明授权
    Circuit for generating scanning pulses 失效
    用于产生扫描脉冲的电路

    公开(公告)号：US4295055A

    公开(公告)日：1981-10-13

    申请号：US46028

    申请日：1979-06-06

    申请人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

    发明人： Iwao Takemoto ,  Norio Koike ,  Shinya Ohba ,  Haruhisa Ando ,  Masaaki Nakai ,  Syoji Hanamura ,  Ryuichi Izawa ,  Masaharu Kubo ,  Masakazu Aoki ,  Shuhei Tanaka

    IPC分类号： G11C19/00 ,  G11C19/18 ,  G11C19/28 ,  H01L27/146 ,  H01L31/10 ,  H03K5/15 ,  H04N3/14

    CPC分类号： H03K5/15093 ,  G11C19/184 ,  G11C19/28

    摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

    摘要翻译： 一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子 被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

    Bulk charge transfer semiconductor device
    7.
    发明授权
    Bulk charge transfer semiconductor device 失效
    大容量充电传输半导体器件

    公开(公告)号：US4032952A

    公开(公告)日：1977-06-28

    申请号：US347426

    申请日：1973-04-03

    申请人： Shinya Ohba ,  Iwao Takemoto ,  Masaharu Kubo

    发明人： Shinya Ohba ,  Iwao Takemoto ,  Masaharu Kubo

    IPC分类号： H01L29/10 ,  H01L29/768 ,  H01L

    CPC分类号： H01L29/7685 ,  H01L29/1062 ,  H01L29/76833 ,  H01L29/76841 ,  Y10S148/08

    摘要： In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

    Solid-state imaging device
    8.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4514766A

    公开(公告)日：1985-04-30

    申请号：US482791

    申请日：1983-04-07

    申请人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Shinya Ohba ,  Toshiaki Masuhara ,  Masaharu Kubo

    IPC分类号： H04N5/345 ,  H04N5/372 ,  H04N5/3728 ,  H04N3/15

    CPC分类号： H04N3/1575 ,  H01L27/14856 ,  H04N3/1537

    摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.

    摘要翻译： 提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。 成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。 这导致设备的分辨率急剧增加。

    Solid-state imaging device
    9.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4209806A

    公开(公告)日：1980-06-24

    申请号：US928734

    申请日：1978-07-27

    申请人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    IPC分类号： H01L27/088 ,  H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14 ,  H01L27/14 ,  H01L29/78

    CPC分类号： H01L27/14643 ,  H01L27/088

    摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

    摘要翻译： 在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中 其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成 在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。