公开(公告)号：US09491386B2

公开(公告)日：2016-11-08

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/378 ,  H04N5/63 ,  H04N5/335

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。

公开(公告)号：US09380234B1

公开(公告)日：2016-06-28

申请号：US14702323

申请日：2015-05-01

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Han Lei Lock

IPC: H04N5/335 ,  H04N5/363 ,  H04N5/374 ,  H04N5/378 ,  H04N5/357

CPC classification number: H04N5/3575 ,  H04N5/378

Abstract: A reduced random telegraph signal (RTS)-noise CMOS image sensor includes a pixel and a correlated double sampling (CDS) circuit electrically connected to the pixel. The CDS circuit is characterized by a CDS period that includes a reference sample period and an image data sample period. The image sensor also includes a bitline, a bitline connection switch between the pixel and a readout circuit connected to the pixel, and a bitline switch controller. The bitline transmits a transfer gate signal as a bitline signal having a non-zero value during a first time period entirely between the reference sample period and the image data sample period. The bitline switch controller is electrically connected to and configured to control the bitline connection switch such that the bitline connection switch is closed during the entire CDS period except for a single continuous open period that includes the first time period.

Abstract translation: 减少的随机电报信号（RTS） - 噪声CMOS图像传感器包括电连接到像素的像素和相关双采样（CDS）电路。 CDS电路的特征在于包括参考采样周期和图像数据采样周期的CDS周期。 图像传感器还包括位线，像素与连接到像素的读出电路之间的位线连接开关和位线开关控制器。 该位线在第一时间段内完全在参考采样周期和图像数据采样周期之间传输传输门信号作为具有非零值的位线信号。 位线开关控制器电连接到并配置成控制位线连接开关，使得除了包括第一时间段的单个连续打开周期之外，在整个CDS期间位线连接开关是关闭的。

公开(公告)号：US09123604B2

公开(公告)日：2015-09-01

申请号：US14056132

申请日：2013-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

IPC: H01L31/12 ,  H01L27/12 ,  H01L31/06 ,  H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

公开(公告)号：US11356626B2

公开(公告)日：2022-06-07

申请号：US16855850

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Eiichi Funatsu ,  Woon Il Choi ,  Keiji Mabuchi ,  Chin Poh Pang ,  Qingfei Chen ,  Da Meng ,  Vivian Wang

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

公开(公告)号：US20210337147A1

公开(公告)日：2021-10-28

申请号：US16855854

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Chin Poh Pang ,  Qingwei Shan

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

公开(公告)号：US20210337144A1

公开(公告)日：2021-10-28

申请号：US16855850

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Eiichi Funatsu ,  Woon Il Choi ,  Keiji Mabuchi ,  Chin Poh Pang ,  Qingfei Chen ,  Da Meng ,  Vivian Wang

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

公开(公告)号：US09819883B2

公开(公告)日：2017-11-14

申请号：US14958080

申请日：2015-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Zhiyong Zhan ,  Qingfei Chen ,  Chin-Chang Pai

IPC: H04N5/357 ,  H04N5/3745

CPC classification number: H04N5/357 ,  H04N5/3745

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.

公开(公告)号：US20170208276A1

公开(公告)日：2017-07-20

申请号：US14996141

申请日：2016-01-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Tianjia Sun ,  Qingfei Chen ,  Chun-Ming Tang ,  Jingyi Liu

IPC: H04N5/378 ,  G06T1/20 ,  H01L27/146 ,  H04N5/374

CPC classification number: H04N5/378 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3577 ,  H04N5/363 ,  H04N5/3658 ,  H04N5/37455

Abstract: A method of implementing dynamic ground sharing in an image sensor with pipeline architecture starts with a pixel array capturing image data. Pixel array includes pixels to generate pixel data signals, respectively. A readout circuitry acquires the image data from a row in the pixel array. An analog-to-digital conversion (ADC) circuitry included in the readout circuitry samples the image data from the row to obtain sampled input data. When the ADC circuitry is sampling, a ground sharing switch is closed to couple the pixel array and the ADC circuitry to a common ground. When the ADC circuitry is not sampling, the ground sharing switch is open to separate the pixel array and the ADC circuitry from the common ground. The ADC circuitry converts the sampled image data from analog to digital to obtain an ADC output. Other embodiments are described.

公开(公告)号：US20160165165A1

公开(公告)日：2016-06-09

申请号：US14559733

申请日：2014-12-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qingfei Chen ,  Duli Mao ,  Han Lei Lock ,  Qingwei Shan

IPC: H04N5/374 ,  H04N5/63 ,  H04N5/378

CPC classification number: H04N5/3741 ,  H04N5/335 ,  H04N5/378 ,  H04N5/63

Abstract: A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion.

Abstract translation: 通过在复位操作期间接通像素单元的复位晶体管以将浮动扩散充电到第一复位电平来提高像素单元中的复位电平。 在浮动扩散复位操作期间，选择晶体管从OFF切换到ON，以放大放大器晶体管的输出端。 在放大晶体管的输出端已响应于选择晶体管的导通而放电之后，复位晶体管截止。 放大器晶体管的输出端子在放电后充电到静态电平。 耦合到放大器晶体管的输入端的浮动扩散器沿着放大器晶体管的输出端连接放大器电容，该放大器电容耦合在放大器晶体管的输入端和输出端之间，以提高浮置扩散的复位电平。