Two stage amplifier readout circuit in pixel level hybrid bond image sensors

    公开(公告)号:US10375338B2

    公开(公告)日:2019-08-06

    申请号:US15421881

    申请日:2017-02-01

    Abstract: A hybrid bonded image sensor has a photodiode die with macrocells having at least one photodiode and a bond contact; a supporting circuitry die with multiple supercells, each supercell having at least one macrocell unit having a bond contact coupled to the bond contact of a macrocell of the photodiode die. Each macrocell unit lies within a supercell and has a reset transistor adapted to reset photodiodes of the macrocell of the photodiode die. Each supercell has at least one common source amplifier adapted to receive signal from the bond contact of a selected macrocell unit of the supercell, the common source amplifier coupled to drive a column line through a selectable source follower. In embodiments, the common source amplifiers of several supercells drive the selectable source follower through a distributed differential amplifier.

    Feedback capacitor and method for readout of hybrid bonded image sensors

    公开(公告)号:US10263031B2

    公开(公告)日:2019-04-16

    申请号:US15421911

    申请日:2017-02-01

    Abstract: A hybrid-bonded image sensor has a photodiode die with multiple macrocells; each macrocell has at least one photodiode and a coupling region. The coupling regions couple to a coupling region of a macrocell unit of a supporting circuitry die where they feed an input of an amplifier and a feedback capacitor. The feedback capacitor also couples to output of the amplifier, and the amplifier inverts between the input and the output. The method includes resetting a photodiode of the photodiode die; coupling signal from photodiode through the bond point to the supporting circuitry die to a feedback capacitor and to an input of the amplifier, the feedback capacitor also coupled to an inverting output of the amplifier; and amplifying the signal with the amplifier, where a capacitance of the feedback capacitor determines a gain of the amplifier.

    Imaging sensor with amplifier having variable bias and increased output signal range

    公开(公告)号:US09961292B1

    公开(公告)日:2018-05-01

    申请号:US15420531

    申请日:2017-01-31

    CPC classification number: H03F3/082 H03F1/0261 H03F1/223 H04N5/355 H04N5/3745

    Abstract: A pixel circuit includes a photodiode, and a transfer transistor coupled to the photodiode. A floating diffusion is coupled to the transfer transistor coupled to transfer image charge from the photodiode to the floating diffusion. An amplifier circuit includes an input coupled to the floating diffusion, an output coupled to generate an image data signal of the pixel circuit, and a variable bias terminal coupled to receive a variable bias signal. A reset switch is coupled between the output and input of the amplifier circuit to reset the amplifier circuit in response to a reset signal. A variable bias generator circuit is coupled to generate the variable bias signal in response to a reset signal to transition the variable bias signal from a first bias signal value to a second bias signal value in response to a transition of the reset signal from an active state to an inactive state.

    Imaging systems including row-period compensators and associated methods

    公开(公告)号:US09843753B2

    公开(公告)日:2017-12-12

    申请号:US14930099

    申请日:2015-11-02

    CPC classification number: H04N5/3698 G03B7/26 H02M3/156 H04N5/23241

    Abstract: An imaging system includes an image sensor and a row-period compensator. The image sensor includes an array of photosensitive pixels and electrical circuitry for controlling the array of photosensitive pixels and for reading accumulated electrical charge therefrom. The electrical circuitry is at least partially powered from a positive power rail and a negative power rail. The row-period compensator is for compensating for a change in current drawn by the electrical circuitry during at least part of a row-period of the image sensor, and the row-period compensator is electrically coupled between the positive and negative power rails. A method for compensating for a change in current drawn by electrical circuitry of an image sensor includes controlling a magnitude of compensation current drawn by a row-period compensator, to compensate for a change in current drawn by the electrical circuitry of the image sensor.

    Imaging Systems Including Row-Period Compensators And Associated Methods

    公开(公告)号:US20170127003A1

    公开(公告)日:2017-05-04

    申请号:US14930099

    申请日:2015-11-02

    CPC classification number: H04N5/3698 G03B7/26 H02M3/156 H04N5/23241

    Abstract: An imaging system includes an image sensor and a row-period compensator. The image sensor includes an array of photosensitive pixels and electrical circuitry for controlling the array of photosensitive pixels and for reading accumulated electrical charge therefrom. The electrical circuitry is at least partially powered from a positive power rail and a negative power rail. The row-period compensator is for compensating for a change in current drawn by the electrical circuitry during at least part of a row-period of the image sensor, and the row-period compensator is electrically coupled between the positive and negative power rails. A method for compensating for a change in current drawn by electrical circuitry of an image sensor includes controlling a magnitude of compensation current drawn by a row-period compensator, to compensate for a change in current drawn by the electrical circuitry of the image sensor.

    Feedback capacitor formed by bonding-via in pixel level bond

    公开(公告)号:US09859312B1

    公开(公告)日:2018-01-02

    申请号:US15427928

    申请日:2017-02-08

    Abstract: An image sensor includes a photodiode disposed in a first semiconductor material, and the photodiode is positioned to absorb image light through the backside of the first semiconductor material. A first floating diffusion is disposed proximate to the photodiode and coupled to receive image charge from the photodiode in response to a transfer signal applied to a transfer gate disposed between the photodiode and the first floating diffusion. A second semiconductor material, including a second floating diffusion, is disposed proximate to the frontside of the first semiconductor material. A dielectric material is disposed between the first semiconductor material and the second semiconductor material, and includes a first bonding via extending from the first floating diffusion to the second floating diffusion, a second bonding via disposed laterally proximate to the first bonding via, and a third bonding via disposed laterally proximate to the first bonding via.

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