公开(公告)号：US11322655B2

公开(公告)日：2022-05-03

申请号：US16635187

申请日：2018-07-05

Applicant: Osram OLED GmbH

Inventor： Thomas Oszinda ,  Attila Molnar ,  Fabian Kopp

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/22

Abstract: Optoelectronic components may include a semiconductor layer sequence on an auxiliary carrier where the sequence includes at least one n-doped layer, at least one p-doped layer, and an active layer therebetween. A first insulation layer is arranged over a surface of the n-doped layer. A first and second metallization are arranged for contacting the p-doped and n-doped layers, and the metallizations are connected to each other. The first and second metallizations are spatially separated from one another. A second insulation layer electrically insulates the first and second metallizations.

公开(公告)号：US20210193875A1

公开(公告)日：2021-06-24

申请号：US16634165

申请日：2018-07-16

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/62 ,  H01L33/14 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.

公开(公告)号：US20200227588A1

公开(公告)日：2020-07-16

申请号：US16640063

申请日：2018-08-21

Applicant: Osram OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/62

Abstract: A radiation-emitting semiconductor chip may include a semiconductor body having a first layer, a second layer, and an active layer therebetween. The active layer may be subdivided into a multiplicity of segments in a plan view of the chip. A separating structure may be formed in the semiconductor body between neighboring segments. The multiplicity of segments may be electrically connected to one another in series and/or in parallel. At least one segment may be assigned a first contact layer having a first contact finger structure and a second contact layer having a second contact finger structure. There may be a direct electrical contact between the first contact layer and the second contact layer in places.

公开(公告)号：US12080827B2

公开(公告)日：2024-09-03

申请号：US18186037

申请日：2023-03-17

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38 ,  H01L33/42

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

公开(公告)号：US11164994B2

公开(公告)日：2021-11-02

申请号：US16310787

申请日：2017-06-26

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L33/08

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

公开(公告)号：US10833224B2

公开(公告)日：2020-11-10

申请号：US16462483

申请日：2017-12-18

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/40 ,  H01L33/46 ,  H01L33/06 ,  H01L33/30

Abstract: An optoelectronic semiconductor chip includes a contact layer that impresses current directly into a first semiconductor region present in direct contact with a current web, the first semiconductor region is an n-side and a second semiconductor region is a p-side of a semiconductor layer sequence, and a second mirror layer is applied directly to a second semiconductor region, a plurality of contact fields and isolator fields are arranged alternately along a longitudinal direction of the current web, in the contact fields, the contact layer is in direct contact with the current web, and the isolator fields are free of the contact layer, and a first mirror layer is located between the current web and the first semiconductor region.

公开(公告)号：US10777708B2

公开(公告)日：2020-09-15

申请号：US16462349

申请日：2017-12-12

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.