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    METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    12.
    发明申请
    METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210028048A1

    公开(公告)日：2021-01-28

    申请号：US16977823

    申请日：2019-03-04

    Applicant: Osram Oled GmbH

    Inventor： Hubert Halbritter

    IPC: H01L21/683 ,  H01L25/16 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/173 ,  H01L31/18 ,  B41F16/00

    Abstract: A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.

    Semiconductor laser and method for producing such a semiconductor laser
    13.
    发明授权
    Semiconductor laser and method for producing such a semiconductor laser 有权

    公开(公告)号：US10797469B2

    公开(公告)日：2020-10-06

    申请号：US16343989

    申请日：2018-01-09

    Applicant: OSRAM OLED GmbH

    Inventor： Hubert Halbritter ,  Andreas Plößl ,  Roland Heinrich Enzmann ,  Martin Rudolf Behringer

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/022 ,  H01S5/42 ,  H01S5/042 ,  H01S5/187

    Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200287072A1

    公开(公告)日：2020-09-10

    申请号：US16754612

    申请日：2018-10-16

    Applicant: OSRAM OLED GmbH

    Inventor： Tilman Ruegheimer ,  Hubert Halbritter

    IPC: H01L31/173 ,  G01S17/04 ,  H01L25/16 ,  G01S7/481

    Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

    Method for Operating an Autostersoscopic Display Device, and Autostereoscopic Display Device
    17.
    发明申请
    Method for Operating an Autostersoscopic Display Device, and Autostereoscopic Display Device 审中-公开

    公开(公告)号：US20200169755A1

    公开(公告)日：2020-05-28

    申请号：US16632286

    申请日：2018-07-24

    Applicant: OSRAM OLED GMBH

    Inventor： Juergen Moosburger ,  Hubert Halbritter ,  Peter Brick ,  Mikko Perälä

    IPC: H04N19/597 ,  H04N13/302 ,  H04N19/51

    Abstract: A method for operating a display device is disclosed. In an embodiment, a method for displaying images or films via a display device includes emitting, for each radiation direction, a partial image composed of sub-pixels of all pixels belonging to this radiation direction and receiving control data for at least some of the sub-pixels at the display device by a data compression algorithm, wherein the data compression algorithm comprises a delta coding, wherein the delta coding includes an initial value, wherein the initial value includes one of the partial images defined as a main image, wherein at least some of the remaining partial images are received as deviations from the main image, and wherein edges of a three-dimensional object to be displayed are excluded from data compression when merging surfaces enclose a real angle of 135° or less.

    Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range
    18.
    发明授权
    Method for operating independently controlled laser diodes in a device where a subset of laser diodes can be operated in their nominal current range 有权

    公开(公告)号：US12176678B2

    公开(公告)日：2024-12-24

    申请号：US16772709

    申请日：2018-11-29

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich Enzmann ,  Hubert Halbritter ,  Michael Klein

    IPC: H01S5/042 ,  H01S3/10 ,  H01S5/06 ,  H01S5/062 ,  H01S5/42 ,  H01S5/40

    Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.

    Laser diode and method for manufacturing a laser diode
    20.
    发明授权
    Laser diode and method for manufacturing a laser diode 有权

    公开(公告)号：US11251587B2

    公开(公告)日：2022-02-15

    申请号：US16612799

    申请日：2018-05-30

    Applicant: OSRAM OLED GMBH

    Inventor： Frank Singer ,  Hubert Halbritter

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S5/0225

    Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

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