公开(公告)号：US10288671B2

公开(公告)日：2019-05-14

申请号：US15547948

申请日：2016-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Schulz ,  Anton Vogl ,  Roland Zeisel

IPC: G01R31/26 ,  G01R31/28

Abstract: A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

公开(公告)号：US20180024185A1

公开(公告)日：2018-01-25

申请号：US15547948

申请日：2016-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Schulz ,  Anton Vogl ,  Roland Zeisel

IPC: G01R31/26

CPC classification number: G01R31/2635 ,  G01R31/2831

Abstract: A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.

公开(公告)号：US09853018B2

公开(公告)日：2017-12-26

申请号：US15021393

申请日：2014-09-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Leirer ,  Berthold Hahn ,  Roland Zeisel ,  Johannes Baur ,  Karl Engl

IPC: H01L33/62 ,  H01L25/16 ,  H01L27/15 ,  H01L25/075 ,  H01L33/38 ,  H01L33/48

CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/156 ,  H01L33/382 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2224/48471 ,  H01L2924/00 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

公开(公告)号：US20160225749A1

公开(公告)日：2016-08-04

申请号：US15021393

申请日：2014-09-10

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christian Leirer ,  Berthold Hahn ,  Roland Zeisel ,  Johannes Baur ,  Karl Engl

IPC: H01L25/16 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/156 ,  H01L33/382 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2224/48471 ,  H01L2924/00 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Abstract translation: 光电半导体芯片包括半导体层序列。 半导体层序列包括第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和具有p-n结的有源区，该有源区形成在第一半导体区域和第二半导体区域之间。 半导体层序列布置在载体上。 半导体芯片还包括第一触点，其设置用于电连接第一半导体区域，第二触点与第一触点不同，并且用于电连接第二半导体区域。 此外，半导体芯片包括与p-n结并联连接并具有第一介电元件的第一电容电元件。