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公开(公告)号：US12199134B2
公开(公告)日：2025-01-14
申请号：US17515338
申请日：2021-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Behringer , Andreas Biebersdorf , Ruth Boss , Erwin Lang , Tobias Meyer , Alexander Pfeuffer , Marc Philippens , Julia Stolz , Tansen Varghese , Sebastian Wittmann , Siegfried Herrmann , Berthold Hahn , Bruno Jentzsch , Korbinian Perzlmaier , Peter Stauss , Petrus Sundgren , Jens Mueller , Kerstin Neveling , Frank Singer , Christian Mueller
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US11296265B2
公开(公告)日：2022-04-05
申请号：US16606538
申请日：2018-04-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Rudolf Behringer , Alexander F. Pfeuffer , Andreas Plößl , Georg Bogner , Berthold Hahn , Frank Singer
IPC: H01L33/62 , H01L25/075 , H01L25/16 , A41D13/01 , A62B17/00
Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
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公开(公告)号：US20210408351A1
公开(公告)日：2021-12-30
申请号：US17293049
申请日：2019-11-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ivar Tangring , Berthold Hahn
IPC: H01L33/64
Abstract: An optoelectronic semiconductor component having an optoelectronic semiconductor chip for emitting electromagnetic radiation. The optoelectronic semiconductor chip may have a first semiconductor layer, a second semiconductor layer, first and second current spreading layers, electrical connection elements and first connection regions. The first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The first current spreading layer is electrically connected to the first semiconductor layer. The electrical connection elements electrically connect the second semiconductor layer to the second current spreading layer. The first connection regions are connected to the first current spreading layer and extend through the second current spreading layer. An area coverage of the first connection regions in a region between adjacent parts of the second current spreading layer is greater than 20% of the area coverage of the second current spreading layer.
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公开(公告)号：US09647174B2
公开(公告)日：2017-05-09
申请号：US15098779
申请日：2016-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
IPC: H01L33/00 , H01L33/14 , H01L21/02 , H01L33/22 , H01L33/02 , H01L33/12 , H01L33/24 , H01L33/32 , H01L33/06
CPC classification number: H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02631 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.
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公开(公告)号：US20160225952A1
公开(公告)日：2016-08-04
申请号：US15098779
申请日：2016-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Joachim Hertkorn , Karl Engl , Berthold Hahn , Andreas Weimar
CPC classification number: H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/02631 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.
Abstract translation: 光电子半导体芯片包括具有生成辐射的有源层和邻近有源层的至少一个n掺杂层的半导体层序列，半导体层序列基于AlInGaN或InGaN，一个或多个中心层由 在n型掺杂层背离载体衬底的一侧生长厚度为25nm至200nm的AlGaN，在侧面形成厚度为300nm至1.2μm的掺杂或未掺杂GaN的聚结层 的中心层或中心层中的一个背离载体衬底，粗糙化从聚结层延伸到n掺杂层的深度或深度，半导体层堆叠的辐射出射区域部分地通过聚结形成 层，中央层暴露在地方。
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Patent Agency Ranking
6.发明授权公开(公告)号：US09306131B2
公开(公告)日：2016-04-05
申请号：US14526713
申请日：2014-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Nikolaus Gmeinwieser , Berthold Hahn
CPC classification number: H01L33/508 , H01L33/06 , H01L33/08 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/504
Abstract: An optoelectronic semiconductor chip having a semiconductor layer sequence includes at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion that extends at least into one of the conversion layers, wherein the roughened portion has a random structure, the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, and the roughened portion includes a plurality of recesses free of a semiconductor material.
Abstract translation: 具有半导体层序列的光电子半导体芯片包括产生初级辐射的至少一个有源层; 多个转换层，其至少部分地吸收主辐射并将主辐射转换成比主辐射更长波长的次级辐射; 以及至少延伸到一个转换层中的粗糙部分，其中粗糙部分具有随机结构，半导体层序列布置在载体上，半导体层序列的背离载体的顶侧由 所述粗糙部分，所述至少一个有源层位于所述载体和所述转换层之间，并且所述粗糙部分包括多个没有半导体材料的凹部。
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公开(公告)号：US12250842B2
公开(公告)日：2025-03-11
申请号：US17639160
申请日：2020-08-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Berthold Hahn , Georg Bogner
IPC: H01L33/48 , H10H20/01 , H10H20/82 , H10H20/832 , H10H20/851 , H10H20/853 , H10H20/855 , H10H20/857
Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.
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公开(公告)号：US20230047118A1
公开(公告)日：2023-02-16
申请号：US17793049
申请日：2021-01-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matin MOHAJERANI , Zeynep Meric-Polster , Martin Behringer , Berthold Hahn
Abstract: A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.
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公开(公告)号：US11264550B2
公开(公告)日：2022-03-01
申请号：US16606538
申请日：2018-04-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Rudolf Behringer , Alexander F. Pfeuffer , Andreas Plößl , Georg Bogner , Berthold Hahn , Frank Singer
IPC: H01L33/62 , H01L25/075 , H01L25/16 , A41D13/01 , A62B17/00
Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
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公开(公告)号：US09947847B2
公开(公告)日：2018-04-17
申请号：US14773864
申请日：2014-03-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Berthold Hahn , Johannes Baur
IPC: H01L33/62 , H01L25/075 , H01L31/05 , H01L25/04 , H01L31/02 , H01L31/0203 , H01L31/0224 , H01L33/48 , H01L33/38
CPC classification number: H01L33/62 , H01L25/042 , H01L25/0753 , H01L31/02002 , H01L31/0203 , H01L31/0224 , H01L31/0516 , H01L33/38 , H01L33/382 , H01L33/486 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , Y02E10/50 , H01L2924/00014
Abstract: An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.
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