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    OPTOELECTRONIC COMPONENT, SEMICONDUCTOR STRUCTURE AND METHOD
    12.
    发明申请
    OPTOELECTRONIC COMPONENT, SEMICONDUCTOR STRUCTURE AND METHOD 有权

    公开(公告)号：US20220376134A1

    公开(公告)日：2022-11-24

    申请号：US17753957

    申请日：2020-03-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas BIEBERSDORF ,  Stefan ILLEK ,  Felix FEIX ,  Christoph KLEMP ,  Ines PIETZONKA ,  Petrus SUNDGREN ,  Christian BERGER ,  Ana KANEVCE

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

    Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

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