公开(公告)号：US20190181299A1

公开(公告)日：2019-06-13

申请号：US16216067

申请日：2018-12-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Franz Eberhard ,  Björn Muermann ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/46

Abstract: A radiation-emitting semiconductor chip includes a semiconductor body having an active region that generates radiation; a first contact layer having a first contact surface and a first contact web structure connected to the first contact surface; a second contact layer having a second contact surface and a second contact web structure connected to the second contact surface, wherein the first contact web structure and the second contact web structure overlap in places in plan view of the semiconductor chip; a current distribution layer through which the first semiconductor layer electrically conductively connects to the first contact layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged between the first semiconductor layer and the current distribution layer and has a plurality of openings into which the current distribution layer extends, and a diameter of the openings is 1 μm to 20 μm.

公开(公告)号：US20180287011A1

公开(公告)日：2018-10-04

申请号：US15939487

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/14 ,  H01L33/50 ,  H01L33/40

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50

Abstract: An optoelectronic chip includes a semiconductor layer sequence including at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-connection contact, the n-doped semiconductor layer is electrically contacted by an n-connection contact, the semiconductor chip has at least two trenches, the p-connection contact is located within the first trench and the n-connection contact is located within the second trench, below the p-connection contact and within the first trench a first dielectric mirror element is arranged, which is electrically insulated, and below the n-connection contact and within the second trench and between the n-connection contact and the n-doped semiconductor layer, a second dielectric mirror element is arranged at least in regions, the second dielectric mirror element being electrically insulated.

公开(公告)号：US12249679B2

公开(公告)日：2025-03-11

申请号：US17630534

申请日：2020-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/60 ,  H01L33/00 ,  H01L33/62

Abstract: A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

公开(公告)号：US20220278259A1

公开(公告)日：2022-09-01

申请号：US17630534

申请日：2020-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/00

Abstract: A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

公开(公告)号：US20190326471A1

公开(公告)日：2019-10-24

申请号：US16310787

申请日：2017-06-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/62 ,  H01L33/46 ,  H01L33/20

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

公开(公告)号：US20180108811A1

公开(公告)日：2018-04-19

申请号：US15573467

申请日：2016-05-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/145 ,  H01L33/62

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-type connection contact, wherein a first trench extending at least partially into the p-doped semiconductor layer is arranged below the p-type connection contact, wherein an electrically insulating first blocking element arranged at least partially below the p-type connection contact and at least partially within the trench is arranged at least between the n-doped semiconductor layer and the p-type connection contact, and wherein the electrically insulating first blocking element is configured to prevent a direct current flow between the p-type connection contact and the p-doped and n-doped semiconductor layers and the active layer.

公开(公告)号：US20210343902A1

公开(公告)日：2021-11-04

申请号：US17280209

申请日：2018-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppl ,  Attila Molnar

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/00

Abstract: An optoelectronic semiconductor component may include an optoelectronic semiconductor chip, a connecting material that contains amorphous aluminum oxide, and a sapphire support. The connecting material may be directly adjacent to the sapphire support. The optoelectronic semiconductor chip may be connected to the sapphire support by means of the connecting material containing aluminum oxide.

公开(公告)号：US20180337309A1

公开(公告)日：2018-11-22

申请号：US15775148

申请日：2016-11-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Cheng Kooi Tan

IPC: H01L33/46 ,  H01L33/50

CPC classification number: H01L33/46 ,  H01L33/32 ,  H01L33/483 ,  H01L33/507 ,  H01L2933/0025

Abstract: A radiation-emitting semiconductor chip includes a substrate; an epitaxial semiconductor layer sequence having an active zone that generates electromagnetic radiation of a first wave-length range, wherein the substrate is transparent to electromagnetic radiation of the active zone; and an optically active layer arranged on a side surface of the substrate and on a rear main surface of the semiconductor chip, which lies opposite to a radiation exit surface of the semiconductor chip.