公开(公告)号：US20220223771A1

公开(公告)日：2022-07-14

申请号：US17595298

申请日：2020-03-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Peter BRICK ,  Hubert HALBRITTER ,  Laura KREINER ,  Tansen VARGHESE ,  Berthold HAHN ,  Bruno JENTZSCH ,  Christopher WIESMANN ,  Jens MUELLER ,  Christian MUELLER

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/50 ,  H01L27/15 ,  H01L27/18

Abstract: An optoelectronic component comprising at least one semiconductor element having an active region adapted to generate light is proposed. the device comprises a dielectric filter disposed above a first major surface of the at least one semiconductor element and adapted to transmit light only in pre-planar directions, and a reflective material disposed on at least one side surface of the at least one semiconductor element and on at least one side surface of the dielectric filter.

公开(公告)号：US20210104574A1

公开(公告)日：2021-04-08

申请号：US17039283

申请日：2020-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Andreas BIEBERSDORF ,  Ruth BOSS ,  Erwin LANG ,  Tobias MEYER ,  Alexander PFEUFFER ,  Marc PHILIPPENS ,  Julia STOLZ ,  Tansen VARGHESE ,  Sebastian WITTMANN ,  Siegfried HERRMANN ,  Berthold HAHN ,  Bruno JENTZSCH ,  Korbinian PERZLMAIER ,  Peter STAUSS ,  Petrus SUNDGREN ,  Jens MUELLER ,  Kerstin NEVELING ,  Frank SINGER ,  Christian MUELLER

IPC: H01L27/15 ,  H01L33/10 ,  H01L33/58

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20200152534A1

公开(公告)日：2020-05-14

申请号：US16615869

申请日：2018-05-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian LEIRER ,  Christian MUELLER ,  Isabel OTTO

IPC: H01L23/31 ,  H01L21/56

Abstract: A semiconductor component may have a semiconductor body, an electrically conductive carrier layer, and an electrically poorly conductive insulation. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. The insulation may be located between the carrier layer and the semiconductor body and covers at least part of the second main face and extends up to at least one lateral face of the semiconductor body.