公开(公告)号：US10008649B2

公开(公告)日：2018-06-26

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US12176380B2

公开(公告)日：2024-12-24

申请号：US17439826

申请日：2020-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

Abstract: An optoelectronic semiconductor device may include a plurality of picture elements, each of which include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor device further includes separating elements arranged between adjacent picture elements and extend in a horizontal direction along a boundary of the adjacent picture element, adjoin the first and the second semiconductor layers, respectively, and extend in the vertical direction through the first and the second semiconductor layers, respectively.

公开(公告)号：US11935994B2

公开(公告)日：2024-03-19

申请号：US17436081

申请日：2020-02-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44

Abstract: A radiation emitting semiconductor chip may include a radiation emitting surface, an epitaxial semiconductor layer sequence having active regions, and a mounting surface facing the radiation emitting surface. The mounting surface may include a plurality of first and second solderable contact surfaces. Each active region may be suppliable with current with a respective first and second solderable contact surface. The first solderable contact surfaces may be arranged in an inner region of the mounting surface. The second solderable contact surface may be arranged in an edge region of the mounting surface. Furthermore, a radiation emitting semiconductor device and a head lamp having such a semiconductor chip may also be useful.

公开(公告)号：US10043958B2

公开(公告)日：2018-08-07

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

CPC classification number: H01L33/60 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US20170236980A1

公开(公告)日：2017-08-17

申请号：US15502473

申请日：2015-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss

IPC: H01L33/46 ,  H01L33/56 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip and a method for producing the same are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support substrate, a semiconductor layer sequence having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged therebetween, and a mirror layer arranged between the support substrate and the semiconductor layer sequence. The chip further includes a dielectric encapsulation layer arranged at least partly between the semiconductor layer sequence and the support substrate and a transparent dielectric cover layer partially covering a region of the encapsulation layer, wherein the mirror layer and side flanks of the mirror layer are covered by an electrically conductive protective layer.

公开(公告)号：US20170148962A1

公开(公告)日：2017-05-25

申请号：US15402689

申请日：2017-01-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/56 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/60 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

公开(公告)号：US09449879B2

公开(公告)日：2016-09-20

申请号：US14987910

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Albert Perchtaler

IPC: H01L21/78 ,  H01L21/304 ,  B23K26/38 ,  B23K26/40 ,  H01L21/683 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6835 ,  H01L33/0095 ,  H01L33/382 ,  H01L2221/68327

Abstract: A method of severing a semiconductor device composite includes a carrier having a main surface and a semiconductor layer sequence arranged on the main surface including forming a separating trench in the semiconductor device composite by a first laser cut such that the separating trench only partially severs the semiconductor device composite in a vertical direction running perpendicular to the main surface, and severing the semiconductor device composite completely along the separating trench with a severing cut with a laser.