公开(公告)号：US07642115B2

公开(公告)日：2010-01-05

申请号：US12426310

申请日：2009-04-20

Applicant: Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

IPC: H01L21/58

CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

Abstract translation: 一种用于形成换能器的方法，包括提供绝缘体上半导体晶片的步骤，该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜，在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极，以及沉积或生长包括电连接部分的粘合层， 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤，所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起，从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器，其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

公开(公告)号：US08627727B2

公开(公告)日：2014-01-14

申请号：US12839401

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

IPC: G01B7/16 ,  G01L1/00 ,  B64C25/00

CPC classification number: G01L1/142 ,  B64D2045/008 ,  G01B7/22 ,  G01L5/0052

Abstract: A capacitive strain sensor for sensing strain of a structure. The sensor includes a first section attached to the structure at a first location and a second section attached to the structure at a second location. The first section includes a capacitor plate electrically isolated from the structure and the second section includes two electrically isolated capacitive plates, both of the plates being electrically isolated from the structure. A flexible connector connects the first section to the second section. The capacitor plate of the first section is separated from the two capacitive plates of the second section by at least one capacitive gap. When strain is experienced by the structure, a change occurs in the capacitive gap due to relative motion between the first and second sections.

Abstract translation: 一种用于感测结构应变的电容式应变传感器。 传感器包括在第一位置处附接到结构的第一部分和在第二位置附接到结构的第二部分。 第一部分包括与该结构电隔离的电容器板，并且第二部分包括两个电隔离的电容板，两个板与结构电隔离。 柔性连接器将第一部分连接到第二部分。 第一部分的电容器板通过至少一个电容间隙与第二部分的两个电容板分开。 当结构经受应变时，由于第一和第二部分之间的相对运动，在电容间隙中发生变化。

公开(公告)号：US06773951B2

公开(公告)日：2004-08-10

申请号：US10278611

申请日：2002-10-23

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

IPC: H01L2100

CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

Abstract translation: 制备半导体结构的方法包括：（a）提供第一材料，其包括（i）包含硅的第一晶片，（ii）通过将硅的一部分转化为SiC而获得的至少一个SiC转换层，（iii） 至少一层非原生SiC施加到转化层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层的区域中注入离子，从而建立 其中限定非本地SiC层的第一部分和非本征SiC层的第二部分的植入区域;（c）提供至少一种附加材料，其包括（i）包含硅的第二晶片和（ii） ）施加到所述第二晶片的表面的氧化物层;（d）将所述第一材料的氧化物层和所述材料的氧化物层粘合以提供所述第一材料和第二材料的组合; 和（e）在植入区域处分离非本地SiC层的第二部分与非本征SiC层的第一部分以提供。 所得的半导体结构包括可以是Si晶片的基底晶片，可以与基底晶片相邻的SiO 2的绝缘氧化物层和非本征SiC的有源顶层。 半导体结构可用于制造集成的电子设备，压力传感器，温度传感器或其他可用于诸如飞机发动机的高温环境中的仪器。

公开(公告)号：US06566158B2

公开(公告)日：2003-05-20

申请号：US09932001

申请日：2001-08-17

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

IPC: H01L2100

CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

Abstract: A method of preparing a semiconductor using ion implantation comprises: (a) providing a first material comprising (i) a first Si wafer, (ii) at least one indigenous SiC layer, (iii) at least one non-indigenous SiC layer applied to the indigenous SiC layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in the non-indigenous SiC layer, thereby establishing an implant region which defines first and second portions of the non-indigenous SiC layer; (c) providing another material comprising (i) a second Si wafer, and (ii) an oxide layer applied to a face of the second wafer; (d) providing an assembly by bonding the oxide layers of the first material and the other material; and (e) separating the first and second portions of the non-indigenous SiC layer at the implant region.

Abstract translation: 使用离子注入制备半导体的方法包括：（a）提供第一材料，其包括（i）第一Si晶片，（ii）至少一个本征SiC层，（iii）至少一个非本征SiC层施加到 本地SiC层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层中注入离子，由此建立植入区域，其限定非本征SiC层的第一和第二部分， - 本土SiC层;（c）提供另外的材料，其包括（i）第二硅晶片，和（ii）施加到所述第二晶片的表面的氧化物层;（d）通过将所述第一晶片的氧化物层 材料和其他材料; 和（e）在植入区域处分离非本征SiC层的第一和第二部分。

公开(公告)号：US06928878B1

公开(公告)日：2005-08-16

申请号：US10952310

申请日：2004-09-28

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

IPC: G01L9/00 ,  H01L41/113 ,  G01L9/16

CPC classification number: G01L9/008 ,  G01L9/0042 ,  G01L9/0055 ,  H01L41/1132 ,  Y10S439/936 ,  Y10T29/42 ,  Y10T29/49 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908

Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

Abstract translation: 一种压力传感器，包括被构造成当压力传感器暴露于其间的差压时移动的可移动部件以及位于可移动部件上的压力感测部件。 压力感测部件包括导电电子气体，其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件，并且压力感测部件可以经由引线输出信号，该信号与压力传感器暴露于的压力相关。

公开(公告)号：US20120012701A1

公开(公告)日：2012-01-19

申请号：US12839401

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

IPC: B64C25/28 ,  G01B7/16

CPC classification number: G01L1/142 ,  B64D2045/008 ,  G01B7/22 ,  G01L5/0052

Abstract: A capacitive strain sensor for sensing strain of a structure. The sensor includes a first section attached to the structure at a first location and a second section attached to the structure at a second location. The first section includes a capacitor plate electrically isolated from the structure and the second section includes two electrically isolated capacitive plates, both of the plates being electrically isolated from the structure. A flexible connector connects the first section to the second section. The capacitor plate of the first section is separated from the two capacitive plates of the second section by at least one capacitive gap. When strain is experienced by the structure, a change occurs in the capacitive gap due to relative motion between the first and second sections.

Abstract translation: 一种用于感测结构应变的电容式应变传感器。 传感器包括在第一位置处附接到结构的第一部分和在第二位置附接到结构的第二部分。 第一部分包括与该结构电隔离的电容器板，第二部分包括两个电隔离的电容板，两个板与结构电隔离。 柔性连接器将第一部分连接到第二部分。 第一部分的电容器板通过至少一个电容间隙与第二部分的两个电容板分开。 当结构经受应变时，由于第一和第二部分之间的相对运动，在电容间隙中发生变化。

公开(公告)号：US07628309B1

公开(公告)日：2009-12-08

申请号：US11120879

申请日：2005-05-03

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo ,  Kimiko Childress

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo ,  Kimiko Childress

IPC: B23K20/00

CPC classification number: H01L24/83 ,  H01L21/7624 ,  H01L24/26 ,  H01L2224/83141 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/1461 ,  Y10T428/13 ,  Y10T428/31678 ,  H01L2924/00 ,  H01L2224/83205

Abstract: A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silicon. The method further includes the step of locating a second eutectic bonding material between the first and second component and adjacent to the first eutectic bonding material. The second eutectic bonding material includes gold. The method further includes the step of heating the first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of the first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of the first and second eutectic bonding materials. The method includes the further step of cooling the hypoeutectic alloy to form a solid solution alloy bonding the first and second components together.

Abstract translation: 一种用于将两个部件结合在一起的方法，包括提供第一部件，提供第二部件以及在第一和第二部件之间定位第一共晶接合材料的步骤。 第一共晶接合材料包括锗，锡或硅中的至少一种。 该方法还包括在第一和第二部件之间并且与第一共晶接合材料相邻定位第二共晶接合材料的步骤。 第二共晶接合材料包括金。 该方法还包括将第一和第二共晶接合材料加热到高于第一和第二共晶接合材料的合金的共晶温度的温度以允许亚共晶合金从第一和第二共晶接合材料形成的步骤。 该方法还包括冷却亚共晶合金以形成将第一和第二组分粘合在一起的固溶体合金的步骤。

公开(公告)号：US08359932B2

公开(公告)日：2013-01-29

申请号：US12839170

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo ,  Chuang-Chia Lin ,  Lawrence Joseph Stang

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo ,  Chuang-Chia Lin ,  Lawrence Joseph Stang

IPC: G01N3/02

CPC classification number: B64C25/001 ,  B64C25/60 ,  B64D2045/008 ,  G01L1/142

Abstract: A strain sensor device for measuring loads on aircraft landing gear. This is done by measuring strains in the lower end of the strut, by which we infer the loading in the entire landing gear structure. These strains can be very large (as high as 10,000 microstrain) and can be imposed in numerous random directions and levels. The present invention includes a removable sensor assembly. An electromechanical means is presented that can accommodate large strains, be firmly attached to the strut, and provide good accuracy and resolution.

Abstract translation: 用于测量飞机起落架载荷的应变传感器装置。 这是通过测量支柱下端的应变来进行的，我们推断整个起落架结构的载荷。 这些菌株可以非常大（高达10,000微克），并且可以在许多随机的方向和水平上施加。 本发明包括可拆卸传感器组件。 提出了一种可以容纳大应变的机电装置，牢固地连接到支柱上，并提供良好的精度和分辨率。

公开(公告)号：US08286508B2

公开(公告)日：2012-10-16

申请号：US12839216

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo ,  Yosief Abraha

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo ,  Yosief Abraha

IPC: G01L3/02

CPC classification number: G01D5/20 ,  B64C25/28 ,  B64D2045/008

Abstract: A system for monitoring landing gear position. An example rotation position sensor includes a hub mount that locks within a shaft of a joint, a first sensor attached to the hub mount, and a second sensor attached to the rotatably attached part that does not rotate. The hub mount includes a nut that has a partially tapered surface and a threaded cavity. The nut is secured within the shaft. The hub mount also includes a mounting unit that has a partially tapered surface that is in opposition to the partially tapered surface of the nut. A fastener secures the hub mount to the nut. In one example, the first sensor includes a magnetometer and the second sensor includes magnet(s). In another example, the first sensor includes inductor sensor(s) and the second sensor includes device(s) that causes a change in an inductance value of the inductor sensor(s) as the joint rotates.

Abstract translation: 用于监控起落架位置的系统。 示例性旋转位置传感器包括锁定在接头的轴内的轮毂座，附接到轮毂座的第一传感器和附接到不旋转的可旋转地附接的部分的第二传感器。 毂安装件包括具有部分锥形表面和螺纹腔的螺母。 螺母固定在轴内。 毂安装件还包括安装单元，该安装单元具有与螺母的部分锥形表面相对的部分锥形表面。 紧固件将轮毂安装件固定到螺母上。 在一个示例中，第一传感器包括磁力计，第二传感器包括磁体。 在另一示例中，第一传感器包括电感传感器，并且第二传感器包括当接头旋转时引起电感器传感器的电感值变化的装置。

公开(公告)号：US20120012700A1

公开(公告)日：2012-01-19

申请号：US12839216

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo ,  Yosief Abraha

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo ,  Yosief Abraha

IPC: B64C25/00 ,  G01B7/30

CPC classification number: G01D5/20 ,  B64C25/28 ,  B64D2045/008

Abstract: A system for monitoring landing gear position. An example rotation position sensor includes a hub mount that locks within a shaft of a joint, a first sensor attached to the hub mount, and a second sensor attached to the rotatably attached part that does not rotate. The hub mount includes a nut that has a partially tapered surface and a threaded cavity. The nut is secured within the shaft. The hub mount also includes a mounting unit that has a partially tapered surface that is in opposition to the partially tapered surface of the nut. A fastener secures the hub mount to the nut. In one example, the first sensor includes a magnetometer and the second sensor includes magnet(s). In another example, the first sensor includes inductor sensor(s) and the second sensor includes device(s) that causes a change in an inductance value of the inductor sensor(s) as the joint rotates.

Abstract translation: 用于监控起落架位置的系统。 示例性旋转位置传感器包括锁定在接头的轴内的轮毂座，附接到轮毂座的第一传感器和附接到不旋转的可旋转地附接的部分的第二传感器。 毂安装件包括具有部分锥形表面和螺纹腔的螺母。 螺母固定在轴内。 毂安装件还包括安装单元，该安装单元具有与螺母的部分锥形表面相对的部分锥形表面。 紧固件将轮毂安装件固定到螺母上。 在一个示例中，第一传感器包括磁力计，第二传感器包括磁体。 在另一示例中，第一传感器包括电感传感器，并且第二传感器包括当接头旋转时引起电感器传感器的电感值变化的装置。