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公开(公告)号：US10142570B1
公开(公告)日：2018-11-27
申请号：US16040905
申请日：2018-07-20
Inventor： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
Abstract: An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.
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12.发明授权Solid-state imaging apparatus, method for driving the same, and imaging apparatus 有权固体摄像装置及其驱动方法以及摄像装置公开(公告)号：US09419052B2
公开(公告)日：2016-08-16
申请号：US14554038
申请日：2014-11-26
Inventor： Hiroyuki Amikawa , Masashi Murakami
IPC: H01L27/00 , H04N3/14 , H01L27/148 , H04N5/355 , H04N5/369 , H04N5/374 , H01L27/146
CPC classification number: H01L27/14831 , H01L27/14612 , H04N5/355 , H04N5/3698 , H04N5/3741
Abstract: A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line.
Abstract translation: 固态成像装置包括排列在像素阵列单元中的多个像素单元，垂直信号线和每个连接到放大晶体管的源电极和漏电极的像素电源线，用于提供电位的Pch晶体管 对垂直信号线的AVDD，用于向垂直信号线提供高于电位AVDD的电位PBIAS_H的Pch晶体管，用于将电位PBIAS_H提供给像素电源线的Pch晶体管，其中当转移晶体管导通并转移时 信号电荷由光电二极管光电转换成浮动扩散部分，Pch晶体管导通，电位PBIAS_H施加到垂直信号线和像素电源线。
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公开(公告)号：US12021109B2
公开(公告)日：2024-06-25
申请号：US18300928
申请日：2023-04-14
Inventor： Masashi Murakami , Kazuko Nishimura , Yasuo Miyake , Yasunori Inoue
IPC: H01L27/146 , H01L27/142 , H01L31/14 , H10K39/32 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K50/80
CPC classification number: H01L27/14665 , H01L27/142 , H01L27/14601 , H01L27/14609 , H01L27/1461 , H01L31/143 , H10K39/32 , H04N25/571 , H04N25/76 , H04N25/77 , H10K30/80 , H10K50/80
Abstract: A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.
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公开(公告)号：US12003872B2
公开(公告)日：2024-06-04
申请号：US18190002
申请日：2023-03-24
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
IPC: H04N5/335 , H01L27/146 , H04N25/53 , H10K39/32
CPC classification number: H04N25/53 , H01L27/14609 , H01L27/14612 , H10K39/32
Abstract: An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.
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公开(公告)号：US11670652B2
公开(公告)日：2023-06-06
申请号：US17712873
申请日：2022-04-04
Inventor： Masashi Murakami , Kazuko Nishimura , Yutaka Abe , Yoshiyuki Matsunaga , Yoshihiro Sato , Junji Hirase
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14665 , H01L27/14636 , H01L51/42
Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.
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Patent Agency Ranking
公开(公告)号：US11595599B2
公开(公告)日：2023-02-28
申请号：US17487955
申请日：2021-09-28
Inventor： Yutaka Abe , Kazuko Nishimura , Masashi Murakami
Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.
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公开(公告)号：US11233958B2
公开(公告)日：2022-01-25
申请号：US16377855
申请日：2019-04-08
Inventor： Yoshiaki Satou , Shota Yamada , Masashi Murakami , Yutaka Hirose
Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.
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公开(公告)号：US11233955B2
公开(公告)日：2022-01-25
申请号：US17173031
申请日：2021-02-10
Inventor： Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号：US11159752B2
公开(公告)日：2021-10-26
申请号：US16815257
申请日：2020-03-11
Inventor： Yutaka Abe , Kazuko Nishimura , Masashi Murakami
Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.
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公开(公告)号：US10957725B2
公开(公告)日：2021-03-23
申请号：US16907742
申请日：2020-06-22
Inventor： Masashi Murakami , Kazuko Nishimura , Yasuo Miyake , Yasunori Inoue
IPC: H01L27/146 , H01L27/142 , H01L31/14 , H04N5/3745 , H04N5/374 , H04N5/355
Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode: an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.
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