Abstract:
There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.
Abstract:
A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.
Abstract:
There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.
Abstract:
A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.
Abstract:
A UV light emitting diode (UV-LED) is arranged in a weathering chamber and a UV light receiving diode, which is constructed on the same material basis as the UV LED, is arranged relative to the UV LED in such a way that a portion of the radiation emitted by the UV LED impinges on the UV light receiving diode during the operation of the device.
Abstract:
A spatial light modulator includes a photosensor diode and a photoemitting diode array, each having two semiconductive layers of opposite electrical polarities, and which are sandwiched together with layers of the same polarity (P or N) in electrical contact with each other. Transparent electrode layers are formed on the opposite surfaces of the photosensor diode and photoemitting diode array respectively, in electrical contact with the layers of the opposite polarity. The individual photoemitting diodes are electrically and optically isolated from each other. With a voltage applied across the electrodes which causes the photosensor diode to be reverse biased and the photoemitting diodes to be forward biased, the photoemitting diode array generates a visual display which is a reproduction of a light image incident on the photosensor diode. The photosensor diode may be replaced by a single layer of a photoconductive material. Two of the spatial light modulators may be combined in a frame with suitable optics to provide eye protection goggles.
Abstract:
A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.
Abstract:
A carrier substrate is configured to carry at least one electronic chip and includes a mounting front face. An encapsulating cover is mounted on the front face of the carrier substrate through a mounting. This mounting includes at least one seating surface through which the cover and the carrier substrate make contact. At least one adhesive bead is located elsewhere than the seating surface in order to securely fasten the encapsulation cover and the carrier substrate.
Abstract:
An optical sensor module has a light receiver and a light-emitter which is surrounded by a light blocking wall, wherein the light receiver is disposed on a main plate and the light-emitter is disposed on a side plate separately from the main plate. The light blocking wall is formed as a light barrier wall between the light receiver and the light-emitter. A projecting portion projecting upward from the main plate is enclosed by the light barrier wall, and a top face of the projecting portion is higher than the light receiving face and the light-emitting face.
Abstract:
A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 μm to 400 μm. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.