Photoelectronic diode spatial light modulator and eye protection goggles
incorporating the same
    6.
    发明授权
    Photoelectronic diode spatial light modulator and eye protection goggles incorporating the same 失效
    光电子二极管空间光调制器和眼睛保护护目镜结合在一起

    公开(公告)号:US4978208A

    公开(公告)日:1990-12-18

    申请号:US383698

    申请日:1989-07-24

    CPC classification number: A61F9/023 H01L31/143 H01L31/153

    Abstract: A spatial light modulator includes a photosensor diode and a photoemitting diode array, each having two semiconductive layers of opposite electrical polarities, and which are sandwiched together with layers of the same polarity (P or N) in electrical contact with each other. Transparent electrode layers are formed on the opposite surfaces of the photosensor diode and photoemitting diode array respectively, in electrical contact with the layers of the opposite polarity. The individual photoemitting diodes are electrically and optically isolated from each other. With a voltage applied across the electrodes which causes the photosensor diode to be reverse biased and the photoemitting diodes to be forward biased, the photoemitting diode array generates a visual display which is a reproduction of a light image incident on the photosensor diode. The photosensor diode may be replaced by a single layer of a photoconductive material. Two of the spatial light modulators may be combined in a frame with suitable optics to provide eye protection goggles.

    Abstract translation: 空间光调制器包括光电二极管和光电二极管阵列,每个具有两个具有相反电极性的半导体层,并且它们被彼此电接触的具有相同极性(P或N)的层夹在一起。 透明电极层分别形成在光电二极管和发光二极管阵列的相对表面上,与相反极性的层电接触。 各个发光二极管彼此电隔离和光学隔离。 利用施加在电极两端的电压,使得光电传感器二极管被反向偏置并且光发光二极管被正向偏置,光发光二极管阵列产生视觉显示,其是入射在光电二极管上的光图像的再现。 光传感器二极管可以由单层感光材料代替。 两个空间光调制器可以在框架中与合适的光学器件组合以提供眼睛保护护目镜。

    Micro semiconductor display device

    公开(公告)号:US11843086B2

    公开(公告)日:2023-12-12

    申请号:US17742705

    申请日:2022-05-12

    CPC classification number: H01L33/62 H01L25/0753 H01L31/143 H01L31/162

    Abstract: A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

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