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公开(公告)号：US20060076108A1
公开(公告)日：2006-04-13
申请号：US10960874
申请日：2004-10-07
IPC分类号： C03C15/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
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公开(公告)号：US20050241762A1
公开(公告)日：2005-11-03
申请号：US11060980
申请日：2005-02-18
申请人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
发明人： Alexander Paterson , Elizabeth Pavel , Valentin Todorow , Huong Nguyen , Thomas Kropewnicki , Brian Hatcher , John Holland
IPC分类号： C23F1/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165
摘要： Embodiments of the invention generally provide etch or CVD plasma processing methods and apparatus used to generate a uniform plasma across the surface of a substrate by modulation pulsing the power delivered to a plurality of plasma controlling devices found in a plasma processing chamber. The plasma generated and/or sustained in the plasma processing chamber is created by the one or more plasma controlling devices that are used to control, generate, enhance, and/or shape the plasma during the plasma processing steps by use of energy delivered from a RF power source. Plasma controlling devices may include, for example, one or more coils (inductively coupled plasma), one or more electrodes (capacitively coupled plasma), and/or any other energy inputting device such as a microwave source.
摘要翻译： 本发明的实施例通常提供蚀刻或CVD等离子体处理方法和装置，用于通过调制脉冲输送到在等离子体处理室中发现的多个等离子体控制装置的功率来在衬底的表面上产生均匀的等离子体。 在等离子体处理室中产生和/或维持的等离子体是由一个或多个等离子体控制装置产生的，这些等离子体控制装置用于在等离子体处理步骤期间通过使用从等离子体处理室输送的能量来控制，产生，增强和/或形成等离子体 射频电源。 等离子体控制装置可以包括例如一个或多个线圈（电感耦合等离子体），一个或多个电极（电容耦合等离子体）和/或任何其它能量输入装置，例如微波源。
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公开(公告)号：US20050016742A1
公开(公告)日：2005-01-27
申请号：US10489991
申请日：2002-09-18
申请人： Karikath Varma , John Holland , David Holden , Stephen Bond , Allan Dale
发明人： Karikath Varma , John Holland , David Holden , Stephen Bond , Allan Dale
CPC分类号： B28B11/24 , B28B5/027 , B32B17/10311 , C04B28/26 , C04B2111/00318 , C04B2111/00612 , C04B2111/50 , C04B40/0263 , C04B2103/40
摘要： Bilayer materials are produced by drying a solution of an alkali metal silicate upon the surface of a flexible backing material until a flexible silicate film is produced. The film may be separated from the backing material and incorporated into laminated fire resistant glazings. The alkali metal silicate solution preferably comprise a surfactant. The bilayers may be transported or stored before the flexible silicate film is separated and incorporated into a glazing.
摘要翻译： 通过在柔性背衬材料的表面上干燥碱金属硅酸盐的溶液直到制备柔性硅酸盐膜来制备双层材料。 膜可以与背衬材料分离并且被并入层压的防火玻璃中。 碱金属硅酸盐溶液优选包含表面活性剂。 双层可以在柔性硅酸盐膜分离并结合到玻璃窗之前被运输或储存。
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14.发明授权公开(公告)号：US06727655B2
公开(公告)日：2004-04-27
申请号：US10055437
申请日：2001-10-26
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/32935 , H01L21/67069
摘要： A method and apparatus is disclosed to monitor and/or control the electrical states at a workpiece disposed in a plasma chamber that is in electrical communication with an RF signal source over a defined signal path. The method includes ascertaining an impedance of the signal path, sensing electrical characteristics of the RF power at the RF signal source and obtaining values of the electrical states at the workpiece. To provide a more accurate model of the electrical states at the workpiece, the modeling includes information concerning the impedance introduced by the signal path. This technique may be employed to provide feedback control of the RF generator, so that the electrical states may be dynamically adjusted be within predefined, or desired, parameters.
摘要翻译： 公开了一种监测和/或控制设置在等离子体室中的工件上的电状态的方法和装置，该等离子体腔室通过限定的信号路径与RF信号源电连通。 该方法包括确定信号路径的阻抗，感测RF信号源处的RF功率的电特性并获得工件处的电状态的值。 为了提供工件上电状态的更准确的模型，建模包括有关由信号路径引入的阻抗的信息。 可以采用这种技术来提供RF发生器的反馈控制，使得电状态可以在预定义或期望的参数内被动态调整。
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公开(公告)号：US06706138B2
公开(公告)日：2004-03-16
申请号：US09931324
申请日：2001-08-16
IPC分类号： H01L21306
CPC分类号： H01J37/3244 , H01J37/32082
摘要： Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.
摘要翻译： 提供了用于处理基板的设备和方法。 用于处理衬底的设备包括：具有第一电极的腔室; 设置在所述室中并提供第二电极的衬底支撑件; 电连接到第一或第二电极的高频电源; 电连接到第一或第二电极的低频电源; 和连接到一个或多个电极的可变阻抗元件。 可调谐可变阻抗元件以控制第一电极和第二电极之间的自偏压分压。 本发明的实施例大大减少电极的侵蚀，保持工艺均匀性，提高用于形成高纵横比亚微米互连特征的蚀刻工艺的精度，并提供增加的蚀刻速率，从而减少集成电路的生产时间和成本 。
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16.发明授权公开(公告)号：US06685798B1
公开(公告)日：2004-02-03
申请号：US09611169
申请日：2000-07-06
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。
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公开(公告)号：US06660127B2
公开(公告)日：2003-12-09
申请号：US10075223
申请日：2002-02-12
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： We have discovered a method which permits plasma etching at a constant etch rate. The constant etch rate is achieved by controlling plasma process parameters so that a stable plasma is obtained, with a portion of the power deposited to the plasma being a capacitive contribution, and a portion being an inductive contribution. In particular, a stable plasma may be obtained within two process regions. In the first region, the gradient of the capacitive power to the power applied to the inductively coupled source for plasma generation [∂Pcap/∂PRF] is greater than 0. In the second region, plasma stability is controlled so that [∂Pcap/∂PRF] is less than 0 and so that Pcap
摘要翻译： 我们已经发现了以恒定的蚀刻速率允许等离子体蚀刻的方法。 通过控制等离子体工艺参数来实现恒定的蚀刻速率，从而获得稳定的等离子体，其中沉积到等离子体的功率的一部分是电容性贡献，并且部分是归纳贡献。 特别地，可以在两个工艺区域内获得稳定的等离子体。 在第一区域中，电容性功率对施加到用于等离子体产生的电感耦合源的功率的梯度大于0.在第二区域中，等离子体稳定性受到控制，使得[∂Pcap/ ∠PRF]小于0，因此Pcap << PRF。 通常，Pcap的幅度小于PRF大小的10％。 在稳定等离子体区域中的蚀刻工艺的操作使得能够使用定时蚀刻终点。
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公开(公告)号：US06462481B1
公开(公告)日：2002-10-08
申请号：US09611345
申请日：2000-07-06
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： The invention is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
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公开(公告)号：US06418201B1
公开(公告)日：2002-07-09
申请号：US09510311
申请日：2000-02-22
申请人： John Holland , Paul Ranford , Peter Robson , Neal Oliver
发明人： John Holland , Paul Ranford , Peter Robson , Neal Oliver
IPC分类号： H04M1100
CPC分类号： H04M7/0036 , H04M3/367 , H04M3/487 , H04M3/493 , H04M3/51 , H04M3/5234 , H04M7/0018 , H04M2201/16 , H04M2201/40 , H04Q3/0045 , H04Q3/0054
摘要： A call processing system is disclosed wherein plural platforms are populated with plural voice boards. Each board on the different platforms is populated with different resources, and resources may be allocated from any board and any platform to process calls. In a preferred implementation, a priority system is established so that co-located resources are preferred.
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公开(公告)号：USD408997S
公开(公告)日：1999-05-04
申请号：US59360
申请日：1996-09-09
申请人： John Holland
设计人： John Holland
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