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14 条记录 (耗时 0.018 秒)

    Systems For Cooling RF Heated Chamber Components
    2.
    发明申请
    Systems For Cooling RF Heated Chamber Components 有权
    RF加热室部件冷却系统

    公开(公告)号：US20130087283A1

    公开(公告)日：2013-04-11

    申请号：US13292649

    申请日：2011-11-09

    申请人： Jon McChesney ,  Saravanapriyan Sriraman ,  Ricky Marsh ,  Alex Paterson ,  John Holland

    发明人： Jon McChesney ,  Saravanapriyan Sriraman ,  Ricky Marsh ,  Alex Paterson ,  John Holland

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32522 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32238

    摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    摘要翻译： 在一个实施例中，等离子体处理装置可以包括电介质窗，真空室，能量源和至少一个空气放大器。 电介质窗口可以包括等离子体暴露表面和空气暴露表面。 电介质窗口的真空室和等离子体暴露表面可以配合以包围等离子体处理气体。 能量源可以通过电介质窗口传输电磁能并在电介质窗口中形成升高的温度区域。 至少一个空气放大器可以与电介质窗口流体连通。 至少一个空气放大器可以在至少约1in-H 2 O的背压下操作，并且可以提供至少约30cfm的空气。

    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK
    3.
    发明申请
    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
    用于测试静电卡盘的系统和方法

    公开(公告)号：US20120153971A1

    公开(公告)日：2012-06-21

    申请号：US13372423

    申请日：2012-02-13

    申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    IPC分类号： G01R27/26 ,  G01R23/02

    CPC分类号： H01L21/6833

    摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

    摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

    Electrostatic chuck having electrode with rounded edge
    4.
    发明申请
    Electrostatic chuck having electrode with rounded edge 审中-公开
    具有圆形边缘电极的静电吸盘

    公开(公告)号：US20050016465A1

    公开(公告)日：2005-01-27

    申请号：US10626156

    申请日：2003-07-23

    申请人： Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

    发明人： Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

    IPC分类号： H01L21/68 ,  H01L21/683 ,  H02N13/00 ,  C23C16/00

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about π/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.

    摘要翻译： 静电吸盘可以减少围绕其外围边缘的电场效应。 在一个版本中，卡盘包括覆盖具有周边的电极的电介质和围绕周边延伸的导线环，所述导线环具有基本上圆形的径向向外的表面。 或者，电极可以具有包括顶表面和底表面的中心平面部分，以及周边弓形部分，其具有尖端，该尖端具有在中心平面的顶表面之间的法线之间的至少约π/ 8弧度的曲率长度 并且与尖端的上表面垂直。 静电卡盘用于将基板保持在基板处理装置的处理室中。

    Temperature Control in RF Chamber with Heater and Air Amplifier
    6.
    发明申请
    Temperature Control in RF Chamber with Heater and Air Amplifier 有权
    加热器和空气放大器RF室中的温度控制

    公开(公告)号：US20130228283A1

    公开(公告)日：2013-09-05

    申请号：US13851793

    申请日：2013-03-27

    申请人： Jon McChesney ,  Alex Paterson

    发明人： Jon McChesney ,  Alex Paterson

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32522 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32238 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/3065

    摘要： Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.

    摘要翻译： 提出了用于控制半导体制造室中的窗口的温度的系统，方法和计算机程序。 一种装置包括空气放大器，增压室，加热器，温度传感器和控制器。 空气放大器耦合到加压气体，并在被激活时产生空气流。 空气放大器还连接到增压室和加热器。 充气室接收空气流并将空气流分配在等离子体室的窗口上。 当加热器被激活时，在加工期间空气的流动被加热，并且当加热器未被激活时，空气的流动冷却窗口。 温度传感器位于等离子体室的窗口周围，并且控制器被定义为基于由温度传感器测量的温度来激活空气放大器和加热器。

    System and method for testing an electrostatic chuck
    7.
    发明授权
    System and method for testing an electrostatic chuck 有权
    用于测试静电卡盘的系统和方法

    公开(公告)号：US08143904B2

    公开(公告)日：2012-03-27

    申请号：US12249215

    申请日：2008-10-10

    申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    IPC分类号： G01R27/26

    CPC分类号： H01L21/6833

    摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

    摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK
    8.
    发明申请
    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 有权
    用于测试静电卡盘的系统和方法

    公开(公告)号：US20100090711A1

    公开(公告)日：2010-04-15

    申请号：US12249215

    申请日：2008-10-10

    申请人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    发明人： Hong Shih ,  Saurabh Ullal ,  Tuochuan Huang ,  Yan Fang ,  Jon McChesney

    IPC分类号： G01R27/28 ,  G01R27/08 ,  G01R27/26

    CPC分类号： H01L21/6833

    摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

    摘要翻译： 本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

    Tandem etch chamber plasma processing system
    9.
    发明授权
    Tandem etch chamber plasma processing system 有权
    串联腐蚀室等离子体处理系统

    公开(公告)号：US06962644B2

    公开(公告)日：2005-11-08

    申请号：US10241653

    申请日：2002-09-10

    申请人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    发明人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

    IPC分类号： H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32458

    摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

    摘要翻译： 一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。 隔离处理区域具有上端和下端。 所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。 多个电源的输出频率是相位和/或频率锁定在一起的。 另外，腔室包括多个气体分配组件。 每个气体分配组件设置在每个隔离的处理区域内。 可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。 可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。