Superconducting device with asymmetric impedance

    公开(公告)号:US11793090B1

    公开(公告)日:2023-10-17

    申请号:US17826088

    申请日:2022-05-26

    Inventor: Faraz Najafi

    CPC classification number: H10N69/00 H10N60/30

    Abstract: An electronic component having an asymmetric impedance is provided. The component includes first, second and third branches that connect at a common node. The component includes a first portion of superconducting material disposed along the first branch and a second portion of superconducting material disposed along the second branch. The component includes a first device disposed along the first branch and configured to transition the second portion of the superconducting material to a non-superconducting state when a current between a first terminal of the first device and a second terminal of the first device exceeds a first threshold value and a second device disposed along the second branch and configured to transition the first portion of the superconducting material to a non-superconducting state when a current between a first terminal of the second device and a second terminal of the second device exceeds a second threshold value.

    Superconducting Field-Programmable Gate Array

    公开(公告)号:US20230148267A1

    公开(公告)日:2023-05-11

    申请号:US17838917

    申请日:2022-06-13

    CPC classification number: H03K19/195 G01J1/44 H10N60/30 H10N60/84 G01J2001/442

    Abstract: A programmable circuit includes a superconducting component arranged in a multi-dimensional array of alternating narrow and wide portions. The programmable circuit further includes a plurality of heat sources, each heat source configured to selectively provide heat to a respective narrow portion sufficient to transition the respective narrow portion from a superconducting state to a non-superconducting state. The programmable circuit further includes a plurality of electrical terminals, each electrical terminal coupled to a respective wide portion of the multi-dimensional array.

    Diode devices based on superconductivity

    公开(公告)号:US11502237B2

    公开(公告)日:2022-11-15

    申请号:US17114062

    申请日:2020-12-07

    Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

    Superconducting device with asymmetric impedance

    公开(公告)号:US11380731B1

    公开(公告)日:2022-07-05

    申请号:US17033337

    申请日:2020-09-25

    Inventor: Faraz Najafi

    Abstract: An electronic component having an asymmetric impedance is provided. The component includes first, second and third branches that connect at a common node. The component includes a first portion of superconducting material disposed along the first branch and a second portion of superconducting material disposed along the second branch. The component includes a first device disposed along the first branch and configured to transition the second portion of the superconducting material to a non-superconducting state when a current between a first terminal of the first device and a second terminal of the first device exceeds a first threshold value and a second device disposed along the second branch and configured to transition the first portion of the superconducting material to a non-superconducting state when a current between a first terminal of the second device and a second terminal of the second device exceeds a second threshold value.

    Photodetector with Superconductor Nanowire Transistor Based on Interlayer Heat Transfer

    公开(公告)号:US20210408357A1

    公开(公告)日:2021-12-30

    申请号:US17195522

    申请日:2021-03-08

    Inventor: Faraz Najafi

    Abstract: A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

    Diode devices based on superconductivity

    公开(公告)号:US10861734B2

    公开(公告)日:2020-12-08

    申请号:US16547471

    申请日:2019-08-21

    Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

    Superconducting Signal Amplifier
    18.
    发明申请

    公开(公告)号:US20200099354A1

    公开(公告)日:2020-03-26

    申请号:US16553068

    申请日:2019-08-27

    Abstract: A system includes a first superconducting wire and a second superconducting wire connected in parallel. The system includes a first current source coupled to the first superconducting wire and configured to supply a first current in response to a trigger event. The system includes a second current source coupled in series with the parallel combination of the first superconducting wire and the second superconducting wire and configured to supply a second current. The superconducting wires are configured to, while receiving the second current, operate in a superconducting state in the absence of the first current. The first superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first current. The second superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.

    Superconductor-to-insulator devices

    公开(公告)号:US10573800B1

    公开(公告)日:2020-02-25

    申请号:US16107143

    申请日:2018-08-21

    Inventor: Faraz Najafi

    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting switch devices. In one aspect, an electrical circuit includes: (1) a switch device configured to switch between an on state and an off state in response to a first voltage, the switch device comprising: (a) a superconductor layer adapted to transition from a superconducting state to an insulating state in response to a first strain; and (b) a piezoelectric layer positioned adjacent to the superconductor layer, the piezoelectric layer configured to apply the first strain to the superconductor layer in response to the first voltage; (2) a voltage source electrically coupled to the piezoelectric layer of the switch device and configured to supply the first voltage; and (3) an output component coupled to the superconductor layer of the switch device.

    GATED SUPERCONDUCTING PHOTON DETECTOR
    20.
    发明申请

    公开(公告)号:US20180335343A1

    公开(公告)日:2018-11-22

    申请号:US16028293

    申请日:2018-07-05

    Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.

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