公开(公告)号：US08963175B2

公开(公告)日：2015-02-24

申请号：US12266300

申请日：2008-11-06

申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L33/36 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20

CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/385

摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二 导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层 第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

公开(公告)号：US20100109026A1

公开(公告)日：2010-05-06

申请号：US12266300

申请日：2008-11-06

申请人： Grigory ONUSHKIN ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory ONUSHKIN ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/385

摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二 导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层 第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

公开(公告)号：US07704771B2

公开(公告)日：2010-04-27

申请号：US12071544

申请日：2008-02-22

申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

摘要翻译： 一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

公开(公告)号：US08063407B2

公开(公告)日：2011-11-22

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20100193828A1

公开(公告)日：2010-08-05

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US07786498B2

公开(公告)日：2010-08-31

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20080237622A1

公开(公告)日：2008-10-02

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US07968893B2

公开(公告)日：2011-06-28

申请号：US12210472

申请日：2008-09-15

申请人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

发明人： Sang Yeob Song ,  Jin Hyun Lee ,  Yu Seung Kim ,  Kwang Ki Choi ,  Pun Jae Choi ,  Hyun Soo Kim ,  Sang Bum Lee

IPC分类号： H01L31/0256 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

公开(公告)号：US20100090246A1

公开(公告)日：2010-04-15

申请号：US12328142

申请日：2008-12-04

申请人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

发明人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

IPC分类号： H01L33/00 ,  H01L21/18

CPC分类号： H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

摘要翻译： 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

公开(公告)号：US20090159922A1

公开(公告)日：2009-06-25

申请号：US12209644

申请日：2008-09-12

申请人： Hyun Soo KIM ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

发明人： Hyun Soo KIM ,  Joon Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/641 ,  H01L33/14 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.

摘要翻译： 提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层 根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。 根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。