公开(公告)号：US20100090246A1

公开(公告)日：2010-04-15

申请号：US12328142

申请日：2008-12-04

申请人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

发明人： Jin Bock LEE ,  Jin Hyun Lee ,  Hee Seok Park ,  Pun Jae Choi ,  Jong In Yang

IPC分类号： H01L33/00 ,  H01L21/18

CPC分类号： H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

摘要翻译： 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

公开(公告)号：US08809893B2

公开(公告)日：2014-08-19

申请号：US13127847

申请日：2009-11-16

申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

公开(公告)号：US20120032218A1

公开(公告)日：2012-02-09

申请号：US13125256

申请日：2009-10-22

申请人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

发明人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2933/0016

摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

摘要翻译： 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

公开(公告)号：US08686454B2

公开(公告)日：2014-04-01

申请号：US13125256

申请日：2009-10-22

申请人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

发明人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2933/0016

摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

摘要翻译： 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

公开(公告)号：US20120056150A1

公开(公告)日：2012-03-08

申请号：US13292774

申请日：2011-11-09

申请人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

发明人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

IPC分类号： H01L33/04

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

摘要翻译： 提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。 氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。 氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

公开(公告)号：US20120018764A1

公开(公告)日：2012-01-26

申请号：US13127847

申请日：2009-11-16

申请人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

发明人： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC分类号： H01L33/62

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

摘要翻译： 本发明涉及一种用于半导体的垂直/水平发光二极管。 本发明的示例性实施例提供了一种半导体发光二极管，包括：导电衬底; 包括依次形成在所述导电基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构; 第二导电电极，包括通过第一导电半导体的导电通孔和与第二导电半导体层连接的有源层，以及从导电通孔延伸并暴露在发光结构外部的电连接器; 用于覆盖电介质和至少所述发光结构的有源层的侧表面的钝化层，所述电介质用于将所述第二导电电极与所述导电基板，所述第一导电半导体层和所述有源层电隔离; 以及形成在从有源层发射的光的路径上的表面起伏结构。 根据本发明，可以获得具有增强的外部光提取效率，特别是二极管侧光提取效率的半导体发光二极管。

公开(公告)号：US08008683B2

公开(公告)日：2011-08-30

申请号：US12406568

申请日：2009-03-18

申请人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

发明人： Pun Jae Choi ,  Yu Seung Kim ,  Jin Bock Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2933/0016

摘要： The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.

摘要翻译： 本发明提供了一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，其中区域 其中第一电极层和第一半导体层彼此接触的是其半导体发光器件的面积的3至13％。

公开(公告)号：US20090159909A1

公开(公告)日：2009-06-25

申请号：US12252660

申请日：2008-10-16

申请人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

发明人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

摘要翻译： 提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。 氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。 氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。

公开(公告)号：US08963175B2

公开(公告)日：2015-02-24

申请号：US12266300

申请日：2008-11-06

申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

IPC分类号： H01L33/36 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20

CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/385

摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二 导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层 第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

公开(公告)号：US08624276B2

公开(公告)日：2014-01-07

申请号：US13568553

申请日：2012-08-07

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

IPC分类号： H01L29/20

CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。