公开(公告)号：US20170359566A1

公开(公告)日：2017-12-14

申请号：US15484637

申请日：2017-04-11

Applicant: QUALCOMM Incorporated

Inventor： Sergiu Radu Goma ,  Todor Georgiev Georgiev ,  Biay-Cheng Hseih ,  Zheng-wu Li ,  Wen-Yu Sun

IPC: H04N13/02 ,  H04N5/374 ,  G02B17/08 ,  H04N5/376 ,  G02B13/02 ,  G03B35/10 ,  H04N5/378 ,  G02B3/00

CPC classification number: H04N13/218 ,  G02B3/0043 ,  G02B13/02 ,  G02B17/0856 ,  G02B27/22 ,  G03B35/10 ,  H01L49/00 ,  H04N5/2254 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378 ,  H04N13/271 ,  H04N2213/001

Abstract: Certain aspects relate to systems and techniques for folded optic stereoscopic imaging, wherein a number of folded optic paths each direct a different one of a corresponding number of stereoscopic images toward a portion of a single image sensor. Each folded optic path can include a set of optics including a first light folding surface positioned to receive light propagating from a scene along a first optical axis and redirect the light along a second optical axis, a second light folding surface positioned to redirect the light from the second optical axis to a third optical axis, and lens elements positioned along at least the first and second optical axes and including a first subset having telescopic optical characteristics and a second subset lengthening the optical path length. The sensor can be a three-dimensionally stacked backside illuminated sensor wafer and reconfigurable instruction cell array processing wafer that performs depth processing.

公开(公告)号：US09786705B2

公开(公告)日：2017-10-10

申请号：US15057818

申请日：2016-03-01

Applicant: QUALCOMM Incorporated

Inventor： Sergiu Radu Goma ,  Biay-Cheng Hseih ,  Todor Georgiev Georgiev

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/33

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H04N5/332 ,  H04N5/369

Abstract: Various embodiments are directed to an image sensor that includes a first sensor portion and a second sensor portion coupled to the first sensor portion. The second sensor portion may be positioned relative to the first sensor portion so that the second sensor portion may initially detect light entering the image sensor, and some of that light passes through the second sensor portion and is be detected by the first sensor portion. In some embodiments, the second sensor portion may be configured to have a thickness suitable for sensing visible light. The first sensor portion may be configured to have a thickness suitable for sensing IR or NIR light. As a result of the arrangement and structure of the second sensor portion and the first sensor portion, the image sensor captures substantially more light from the light source.

公开(公告)号：US09774801B2

公开(公告)日：2017-09-26

申请号：US14561845

申请日：2014-12-05

Applicant: QUALCOMM Incorporated

Inventor： Biay-Cheng Hseih ,  Sergiu Radu Goma

IPC: H04N5/225 ,  H04N5/355 ,  H04N5/232 ,  H04N5/235 ,  H04N5/3745 ,  H04N9/04 ,  H01L27/146

CPC classification number: H04N5/35563 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14641 ,  H04N5/23235 ,  H04N5/2355 ,  H04N5/37457 ,  H04N9/045 ,  H04N2209/046

Abstract: Certain aspects relate to imaging systems and methods for manufacturing imaging systems and image sensors. The imaging system includes a pixel array including a plurality of pixels, the pixels configured to generate a charge when exposed to light and disposed on a first layer. The imaging system further includes a plurality of pixel circuits for reading light integrated in the pixels coupled thereto, each of the plurality of pixel circuits comprising one or more transistors shared between a subset of the plurality of the pixels, the one or more transistors disposed on a second layer different than the first layer. The imaging system further includes a plurality of floating diffusion nodes configured to couple each of the plurality of pixels to the plurality of pixel circuits.

公开(公告)号：US20170084650A1

公开(公告)日：2017-03-23

申请号：US14861678

申请日：2015-09-22

Applicant: QUALCOMM Incorporated

Inventor： Sergiu Radu Goma ,  Kalin Mitkov Atanassov ,  Hasib Ahmed Siddiqui ,  Biay-Cheng Hseih ,  Todor Georgiev Georgiev

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14605 ,  H01L27/14645 ,  H04N9/045

Abstract: Innovations include a sensing device having a sensor array comprising a plurality of sensors, each sensor having a length dimension and a width dimension and configured to generate a signal responsive to radiation incident on the sensor, and a filter array comprising a plurality of filters, the filter array disposed to filter light before it is incident on the sensor array, the filter array arranged relative to the sensor array so each of the plurality of sensors receives radiation propagating through at least one corresponding filter. Each filter has a length dimension and a width dimension, and a ratio of the length dimension of a filter to the length dimension of a corresponding sensor, a ratio of the width dimension of a filter to the width dimension of a corresponding sensor, or both, is a non-integer greater than 1.

公开(公告)号：US20160269661A1

公开(公告)日：2016-09-15

申请号：US15082326

申请日：2016-03-28

Applicant: QUALCOMM Incorporated

Inventor： Biay-Cheng Hseih ,  Jiafu Luo ,  Sergiu Radu Goma

IPC: H04N5/363 ,  H04N5/376 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/363 ,  H04N5/35572 ,  H04N5/35581 ,  H04N5/3559 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378

Abstract: Certain aspects relate to systems and techniques for full well capacity extension. For example, a storage capacitor included in the pixel readout architecture can enable multiple charge dumps from a pixel in the analog domain, extending the full well capacity of the pixel. Further, multiple reads can be integrated in the digital domain using a memory, for example DRAM, in communication with the pixel readout architecture. This also can effectively multiply a small pixel's full well capacity. In some examples, multiple reads in the digital domain can be used to reduce, eliminate, or compensate for kTC noise in the pixel readout architecture.

公开(公告)号：US11818462B2

公开(公告)日：2023-11-14

申请号：US17003807

申请日：2020-08-26

Applicant: QUALCOMM Incorporated

Inventor： Micha Galor Gluskin ,  Biay-Cheng Hseih

IPC: H04N23/67 ,  G06T7/521 ,  G06T7/80 ,  G06T7/55

CPC classification number: H04N23/672 ,  G06T7/521 ,  G06T7/55 ,  G06T7/80 ,  G06T2207/10028 ,  G06T2207/10048

Abstract: Various embodiments are directed to a device including an infrared phase detection autofocus (PDAF) sensor. The device may include a projector configured to transmit a source light onto a scene. The device may include the infrared PDAF sensor configured to receive reflections of the source light off of objects within the scene. The infrared PDAF sensor may include a first set of pixels including focus pixels. The device may include a processor coupled to the infrared PDAF sensor and a memory. The processor may be configured to generate first depth data based on the received reflections of the source light. The processor may be configured to generate second depth data based on signals generated from corresponding pairs of the focus pixels. The processor may be configured to generate combined depth data based on the first depth data and the second depth data.

公开(公告)号：US11563873B2

公开(公告)日：2023-01-24

申请号：US16848487

申请日：2020-04-14

Applicant: QUALCOMM Incorporated

Inventor： Jian Ma ,  Sergiu Goma ,  Biay-Cheng Hseih

IPC: H04N5/222 ,  G02B5/18 ,  H04N5/232 ,  G01S7/481 ,  G01S7/484 ,  G01S17/08

Abstract: Aspects of the present disclosure relate to depth sensing using a device. An example device includes a first light projector configured to project light towards a second light projector configured to project light towards the first light projector. The example device includes a reflective component positioned between the first and second light projectors, the reflective component configured to redirect the light projected by the first light projector onto a first portion of a scene and to redirect the light projected by the second light projector onto a second portion of the scene, and the first and second portions of the scene being adjacent to one another and non-overlapping relative to one another. The example device includes a receiver configured to detect reflections of redirected light projected by the first and second light projectors.

公开(公告)号：US10608036B2

公开(公告)日：2020-03-31

申请号：US16161958

申请日：2018-10-16

Applicant: QUALCOMM Incorporated

Inventor： Jian Ma ,  Biay-Cheng Hseih ,  Sergiu Radu Goma

IPC: H01L27/146 ,  H04N5/225 ,  H04N5/369 ,  G01S7/481

Abstract: Various embodiments are directed to a light pipe. The light pipe may include a channel within a substrate of an image sensor. The channel may be formed by a plurality of layers. The plurality of layers may include a first layer and a second layer. The second layer may be spaced apart from the first layer along an axis of the channel.

公开(公告)号：US20160165159A1

公开(公告)日：2016-06-09

申请号：US14561845

申请日：2014-12-05

Applicant: QUALCOMM Incorporated

Inventor： Biay-Cheng Hseih ,  Sergiu Radu Goma

IPC: H04N5/355 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/235 ,  H04N5/232

CPC classification number: H04N5/35563 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14641 ,  H04N5/23235 ,  H04N5/2355 ,  H04N5/37457 ,  H04N9/045 ,  H04N2209/046

Abstract: Certain aspects relate to imaging systems and methods for manufacturing imaging systems and image sensors. The imaging system includes a pixel array including a plurality of pixels, the pixels configured to generate a charge when exposed to light and disposed on a first layer. The imaging system further includes a plurality of pixel circuits for reading light integrated in the pixels coupled thereto, each of the plurality of pixel circuits comprising one or more transistors shared between a subset of the plurality of the pixels, the one or more transistors disposed on a second layer different than the first layer. The imaging system further includes a plurality of floating diffusion nodes configured to couple each of the plurality of pixels to the plurality of pixel circuits.

Abstract translation: 某些方面涉及用于制造成像系统和图像传感器的成像系统和方法。 所述成像系统包括包括多个像素的像素阵列，所述像素被配置为当暴露于光并且设置在第一层上时产生电荷。 所述成像系统还包括多个像素电路，用于读取集成在与其耦合的像素中的光，所述多个像素电路中的每一个包括在所述多个像素的子集之间共享的一个或多个晶体管，所述一个或多个晶体管设置在 与第一层不同的第二层。 成像系统还包括被配置为将多个像素中的每一个耦合到多个像素电路的多个浮动扩散节点。

公开(公告)号：US11488999B2

公开(公告)日：2022-11-01

申请号：US16735084

申请日：2020-01-06

Applicant: QUALCOMM Incorporated

Inventor： Biay-Cheng Hseih ,  Sergiu Radu Goma

IPC: H01L27/146 ,  H04N5/369 ,  G01S17/86 ,  G01S17/894

Abstract: Aspects of the present disclosure relate to an image sensor. An example apparatus includes an image sensor including one or more pixels. Each pixel of the one or more pixels includes a photodetector, and the photodetector includes a photosensitive surface including germanium. In some implementations, the photodetector includes a photodiode including an intrinsic silicon layer doped with germanium or including germanium crystals. The intrinsic layer may be between a p− layer and an n− layer not including germanium. The intrinsic layer may be configured to absorb photons of the light received at the intrinsic layer. The light may include one or more reflections of an emitted light for active depth sensing. For example, the emitted light may be frequency modulated and having a first wavelength for indirect time-of-flight depth sensing. Sampling circuits may generate voltages indicating a phase difference between the emitted light and a reflection of the emitted light.