-
公开(公告)号:US09455300B1
公开(公告)日:2016-09-27
申请号:US14662620
申请日:2015-03-19
Applicant: RayVio Corporation
Inventor: Douglas A. Collins , Li Zhang , Faisal Sudradjat
CPC classification number: H01L27/156 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/44 , H01L33/486 , H01L33/62
Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.
Abstract translation: 本发明的实施例包括在生长衬底上生长的第一半导体层和在第一半导体层上生长的多个像素,每个像素包括设置在n型区域和p型区域之间的有源层。 沟渠分离各个像素,并为每个像素形成至少一个侧壁。 与p型区域直接接触的第一金属层设置在每个像素的顶表面上。 与n型区域直接接触的第二金属层设置在与每个像素相邻的沟槽的底表面上。 电隔离第一和第二金属层的绝缘层设置在每个像素的侧壁上并且基本上与侧壁共形。
-
公开(公告)号:US10403792B2
公开(公告)日:2019-09-03
申请号:US15063260
申请日:2016-03-07
Applicant: RayVio Corporation
Inventor: Saijin Liu , Li Zhang , Douglas A. Collins
Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.
-
公开(公告)号:US10258715B1
公开(公告)日:2019-04-16
申请号:US15905593
申请日:2018-02-26
Applicant: RayVio Corporation
Inventor: Douglas A. Collins , Li Zhang , Saijin Liu , Yitao Liao
IPC: A61L9/00 , A61L9/20 , H01L33/48 , H01L33/32 , H01L33/06 , H01L27/15 , H01L33/40 , H01L33/58 , C02F1/32 , H01L25/16 , H01L33/20
Abstract: Embodiments of the invention include a vessel having an opening and a detachable cover for covering the opening. The cover includes a semiconductor device with an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The cover also includes a sensor for detecting whether the cover is covering the opening.
-
公开(公告)号:US10246348B2
公开(公告)日:2019-04-02
申请号:US15820184
申请日:2017-11-21
Applicant: RayVio Corporation
Inventor: Douglas A. Collins , Li Zhang , Yitao Liao
Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.
-
公开(公告)号:US09789215B1
公开(公告)日:2017-10-17
申请号:US15094873
申请日:2016-04-08
Applicant: RayVio Corporation
Inventor: Douglas A. Collins , Li Zhang , Yitao Liao
CPC classification number: A61L2/10 , A61L9/20 , C02F1/325 , C02F2201/3222 , C02F2201/3228 , C02F2201/326 , C02F2303/04
Abstract: Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.
-
-
-
-