Pixel array of ultraviolet light emitting devices
    11.
    发明授权
    Pixel array of ultraviolet light emitting devices 有权
    紫外发光装置的像素阵列

    公开(公告)号:US09455300B1

    公开(公告)日:2016-09-27

    申请号:US14662620

    申请日:2015-03-19

    Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

    Abstract translation: 本发明的实施例包括在生长衬底上生长的第一半导体层和在第一半导体层上生长的多个像素,每个像素包括设置在n型区域和p型区域之间的有源层。 沟渠分离各个像素,并为每个像素形成至少一个侧壁。 与p型区域直接接触的第一金属层设置在每个像素的顶表面上。 与n型区域直接接触的第二金属层设置在与每个像素相邻的沟槽的底表面上。 电隔离第一和第二金属层的绝缘层设置在每个像素的侧壁上并且基本上与侧壁共形。

    Package for ultraviolet emitting devices

    公开(公告)号:US10403792B2

    公开(公告)日:2019-09-03

    申请号:US15063260

    申请日:2016-03-07

    Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

    Ultraviolet disinfection system
    14.
    发明授权

    公开(公告)号:US10246348B2

    公开(公告)日:2019-04-02

    申请号:US15820184

    申请日:2017-11-21

    Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

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