UV FLUID DISINFECTION MODULE
    3.
    发明申请

    公开(公告)号:US20200308025A1

    公开(公告)日:2020-10-01

    申请号:US16363949

    申请日:2019-03-25

    Abstract: A UVC disinfection system is described where incoming fluid, such as water, is directed onto a transparent window in a vertical disinfection chamber. The incoming water is directed downward by a channel at an acute angle (e.g., 10-20 degrees) with respect to a central axis of the disinfection chamber and impinges on the window at an angle almost perpendicular to the window surface. One or more UVC LEDs are optically coupled to the window. The water impinging on the window becomes agitated due to the severe redirection and interaction with water already in the chamber. This randomizes (mixes) the water in the area where there is the highest UVC power. The UVC LEDs direct light along the central axis of the cylindrical chamber for maximum exposure of the water to the UVC light. Disinfection efficiency is therefore increased.

    Ultraviolet disinfection system
    4.
    发明授权

    公开(公告)号:US10046076B1

    公开(公告)日:2018-08-14

    申请号:US15785162

    申请日:2017-10-16

    Abstract: Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.

    ULTRAVIOLET DISINFECTION SYSTEM
    10.
    发明申请
    ULTRAVIOLET DISINFECTION SYSTEM 有权
    超紫外线消毒系统

    公开(公告)号:US20160355412A1

    公开(公告)日:2016-12-08

    申请号:US15209612

    申请日:2016-07-13

    Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

    Abstract translation: 本发明的实施例包括细长室。 UV源包括半导体器件,该半导体器件包括设置在n型区域和p型区域之间的有源层。 有源层发射具有UV范围内的峰值波长的辐射。 半导体器件位于细长室的壁上。 细长室的内表面是反射性的。

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