MULTILAYER BARRIER STACKS AND METHODS OF MAKING MULTILAYER BARRIER STACKS
    15.
    发明申请
    MULTILAYER BARRIER STACKS AND METHODS OF MAKING MULTILAYER BARRIER STACKS 有权
    多层障碍物堆叠及制作多层障碍物堆叠的方法

    公开(公告)号:US20070281174A1

    公开(公告)日:2007-12-06

    申请号:US11776616

    申请日:2007-07-12

    申请人: Lorenza Moro Xi Chu

    发明人: Lorenza Moro Xi Chu

    IPC分类号: B32B9/04 H01L21/469

    摘要: An improved barrier stack. The barrier stack is made by the process of depositing the polymeric decoupling layer on a substrate; depositing a first inorganic layer on the decoupling layer under a first set of conditions wherein an ion and neutral energy arriving at the substrate is less than about 20 eV so that the first inorganic layer is not a barrier layer, wherein a temperature of the substrate is less than about 150° C.; and depositing a second inorganic layer on the first inorganic layer under a second set of conditions wherein an ion and neutral energy arriving at the substrate is greater than about 50 eV so that the second inorganic layer is a barrier layer. Methods of reducing damage to a polymeric layer in a barrier stack are also described.

    摘要翻译: 改进的障碍堆叠。 通过将聚合物去耦层沉积在基底上的过程制成阻挡层叠层; 在第一组条件下沉积在去耦层上的第一无机层,其中到达衬底的离子和中性能量小于约20eV,使得第一无机层不是阻挡层,其中衬底的温度为 小于约150℃。 以及在第二组条件下在第一无机层上沉积第二无机层,其中到达衬底的离子和中性能大于约50eV,使得第二无机层是阻挡层。 还描述了减少阻挡层中聚合物层损伤的方法。

    Method of making an encapsulated sensitive device
    17.
    发明申请
    Method of making an encapsulated sensitive device 有权
    制作封装敏感器件的方法

    公开(公告)号:US20060216951A1

    公开(公告)日:2006-09-28

    申请号:US11439474

    申请日:2006-05-23

    IPC分类号: H01L21/31

    摘要: A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

    摘要翻译: 一种制造封装等离子体敏感装置的方法。 该方法包括:提供与衬底相邻的等离子体敏感器件; 使用选自非等离子体工艺或改进的溅射工艺的工艺在等离子体敏感器件上沉积等离子体保护层; 以及沉积与所述等离子体保护层相邻的至少一个势垒堆叠,所述至少一个势垒堆叠包括至少一个去耦层和至少一个势垒层,所述等离子体敏感器件封装在所述衬底和所述至少一个阻挡层之间, 其中使用等离子体工艺沉积去耦层,阻挡层或两者,所述封装等离子体敏感器件与不具有等离子体保护层的封装的等离子体感应器件相比,具有由等离子体引起的损伤量减少。 还描述了封装的等离子体敏感器件。

    Encapsulated devices and method of making
    20.
    发明授权
    Encapsulated devices and method of making 有权
    封装器件及制作方法

    公开(公告)号:US07767498B2

    公开(公告)日:2010-08-03

    申请号:US11509837

    申请日:2006-08-24

    IPC分类号: H01L21/00

    摘要: A method of encapsulating an environmentally sensitive device. The method includes providing a substrate; placing at least one environmentally sensitive device adjacent to the substrate; and depositing at least one barrier stack adjacent to the environmentally sensitive device, the at least one barrier stack comprising at least one barrier layer and at least one polymeric decoupling layer, wherein the at least one polymeric decoupling layer is made from at least one polymer precursor, and wherein the polymeric decoupling layer has at least one of: a reduced number of polar regions; a high packing density; a reduced number of regions that have bond energies weaker than a C—C covalent bond; a reduced number of ester moieties; increased Mw of the at least one polymer precursor; increased chain length of the at least one polymer precursor; or reduced conversion of C═C bonds. An encapsulated environmentally sensitive device is also described.

    摘要翻译: 封装环境敏感设备的方法。 该方法包括提供基板; 将至少一个环境敏感的装置放置在与基板相邻的位置; 至少一个阻挡层叠层包括至少一个阻挡层和至少一个聚合物去耦层,其中所述至少一个聚合物去耦层由至少一个聚合物前体制成, ,并且其中所述聚合物去耦层具有以下至少一种:极数区域数目的减少; 高填充密度; 具有比C-C共价键弱的键能的区域数量减少; 减少数量的酯部分; 增加所述至少一种聚合物前体的Mw; 增加所述至少一种聚合物前体的链长度; 或降低C = C键的转化率。 还描述了封装的环境敏感设备。