METHOD FOR EDGE SEALING BARRIER FILMS
    3.
    发明申请
    METHOD FOR EDGE SEALING BARRIER FILMS 审中-公开
    边缘密封膜片的方法

    公开(公告)号:US20090191342A1

    公开(公告)日:2009-07-30

    申请号:US12345787

    申请日:2008-12-30

    IPC分类号: B05D3/00

    摘要: Methods of making an edge-sealed, encapsulated environmentally sensitive device. One method includes providing an environmentally sensitive device with a contact on a substrate; depositing a decoupling layer adjacent to the environmentally sensitive device, the decoupling layer having a discrete area and covering the environmentally sensitive device and not covering the contact, the decoupling layer deposited using a printing process; depositing a first barrier layer adjacent to the decoupling layer, the first barrier layer having a first area greater than the discrete area of the decoupling layer, and the first barrier layer having a second area covering the decoupling layer and the contact, the decoupling layer being sealed between the edges of the first barrier layer and the substrate or an optional second barrier layer; and removing the second area of the first barrier layer from the contact.

    摘要翻译: 制造边缘密封,密封环境敏感设备的方法。 一种方法包括在基板上提供具有接触的环境敏感装置; 沉积与环境敏感设备相邻的去耦层,所述去耦层具有离散区域并覆盖环境敏感设备而不覆盖接触,使用印刷工艺沉积的去耦层; 沉积与所述去耦层相邻的第一势垒层,所述第一势垒层具有大于所述去耦层的离散区域的第一区域,并且所述第一势垒层具有覆盖所述解耦层和所述接触的第二区域,所述去耦层为 密封在第一阻挡层的边缘与基底或任选的第二阻挡层之间; 以及从所述接触件移除所述第一阻挡层的所述第二区域。

    Method of making an encapsulated plasma sensitive device
    5.
    发明授权
    Method of making an encapsulated plasma sensitive device 有权
    制造封装等离子体敏感器件的方法

    公开(公告)号:US07510913B2

    公开(公告)日:2009-03-31

    申请号:US11439474

    申请日:2006-05-23

    IPC分类号: H01L21/44 H01L21/48 H01L21/50

    摘要: A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

    摘要翻译: 一种制造封装等离子体敏感装置的方法。 该方法包括:提供与衬底相邻的等离子体敏感器件; 使用选自非等离子体工艺或改进的溅射工艺的工艺在等离子体敏感器件上沉积等离子体保护层; 以及沉积与所述等离子体保护层相邻的至少一个势垒堆叠,所述至少一个势垒堆叠包括至少一个去耦层和至少一个势垒层,所述等离子体敏感器件封装在所述衬底和所述至少一个阻挡层之间, 其中使用等离子体工艺沉积去耦层,阻挡层或两者,所述封装等离子体敏感器件与不具有等离子体保护层的封装的等离子体感应器件相比,具有由等离子体引起的损伤量减少。 还描述了封装的等离子体敏感器件。