公开(公告)号：US20240096538A1

公开(公告)日：2024-03-21

申请号：US18274286

申请日：2022-01-12

Applicant: Rohm Co., Ltd.

Inventor： Yusuke KITADA ,  Masahiko ARIMURA ,  Daiki YANAGISHIMA

IPC: H01F19/08 ,  H01F27/28 ,  H01F27/29

CPC classification number: H01F19/08 ,  H01F27/2804 ,  H01F27/2885 ,  H01F27/29 ,  H01F2019/085

Abstract: A signal transmission device is constituted by a transformer chip having, for example, a first wiring layer, a second wiring layer different from the first wiring layer, a primary winding formed in the first wiring layer, a secondary winding formed in the second wiring layer to be magnetically coupled with the primary winding, and a shield electrode formed to be interposed between the primary and secondary windings.

公开(公告)号：US20230353144A1

公开(公告)日：2023-11-02

申请号：US18006105

申请日：2021-05-25

Applicant: ROHM CO., LTD.

Inventor： Daiki YANAGISHIMA ,  Akio SASABE

IPC: H03K17/691 ,  H02M3/335 ,  H02M3/07 ,  H03K19/0175

CPC classification number: H03K17/691 ,  H02M3/33523 ,  H02M3/07 ,  H03K19/0175

Abstract: A signal transmission device 100 includes an isolated signal transmission circuit 10 configured to transmit a pulse signal from a primary circuit system 1p via a first isolating element ISO1 to a secondary circuit system 1s, and an isolated power supply control circuit 20 which serves as a controlling agent of an isolation-type power supply that generates a second supply voltage Vcc2 for the secondary circuit system 1s from a first supply voltage Vcc1 for the primary circuit system 1p and which transmits an output feedback signal of the isolation-type power supply from the secondary circuit system 1s via a second isolating element ISO2 to the primary circuit system 1p.

公开(公告)号：US20230327662A1

公开(公告)日：2023-10-12

申请号：US18024086

申请日：2021-09-16

Applicant: ROHM CO., LTD.

Inventor： Takeshi KIKUCHI ,  Masato NISHINOUCHI ,  Akio SASABE ,  Daiki YANAGISHIMA

IPC: H03K17/18 ,  H02P29/024

CPC classification number: H03K17/18 ,  H02P29/0241

Abstract: A signal transmission device that transmits a driving signal for a power transistor from a primary circuit system to a secondary circuit system while isolating between the primary and secondary circuit systems includes; a first fault detection circuit configured to detect a fault in the primary circuit system; a second fault detection circuit configured to detect a fault in the secondary circuit system; a first signal transmission path configured to transmit the result of detection by the second fault detection circuit from the secondary circuit system to the primary circuit system while isolating between the primary and secondary circuit systems; and a self-test circuit configured to perform a self-test on each of the first fault detection circuit, the second fault detection circuit, and the first signal transmission path.

公开(公告)号：US20230298805A1

公开(公告)日：2023-09-21

申请号：US18300193

申请日：2023-04-13

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/64 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L23/3107

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20230155470A1

公开(公告)日：2023-05-18

申请号：US17917661

申请日：2021-04-06

Applicant: Rohm Co., Ltd.

Inventor： Tsuyoshi FUKURA ,  Daiki YANAGISHIMA ,  Akio SASABE

IPC: H02M1/00 ,  H03K19/0175

CPC classification number: H02M1/0006 ,  H03K19/0175 ,  H02M1/08

Abstract: A pulse receiving circuit constituting a signal transmission device includes a first pulse detector that receives a differential input between a first reception pulse signal, i.e. an internal signal at a secondary winding of a first transformer and a second reception pulse signal, i.e. an internal signal at a secondary winding of a second transformer; a second pulse detector that receives the differential input between the first reception pulse signal and the second reception pulse signal with input polarity reversed to that of the first pulse detector; and a logic unit that generates a reception pulse signal based on output signals of the first and second pulse detectors, respectively.

公开(公告)号：US20170287624A1

公开(公告)日：2017-10-05

申请号：US15624205

申请日：2017-06-15

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01F27/28 ,  H01L23/522 ,  H01L23/58 ,  H01L23/495 ,  H01L23/64

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

公开(公告)号：US20160248243A1

公开(公告)日：2016-08-25

申请号：US15042870

申请日：2016-02-12

Applicant: Rohm Co., Ltd.

Inventor： Daiki YANAGISHIMA ,  Chinatsu NAKAOKA

IPC: H02H3/08

CPC classification number: H02H3/087 ,  H02H3/027 ,  H02H3/093 ,  H03K17/08116 ,  H03K17/0828 ,  H03K17/166 ,  H03K17/168

Abstract: A switch drive circuit for driving a switching device includes an overcurrent detector which detects an overcurrent passing through the switching device, and a voltage controller which applies a control voltage to the switching device to control the switching device between On and Off states. When the overcurrent detector detects an overcurrent, the voltage controller applies to the switching device a control voltage that initially drops to a predetermined voltage higher than the threshold voltage of the switching device and that then, after the lapse of a predetermined time, drops further to the ground potential of the switch drive circuit to turn off the switching device. When the overcurrent detector detects no overcurrent, the voltage controller applies to the switching device a control voltage that drops, before the lapse of the predetermined voltage, to the ground potential of the switch drive circuit to turn off the switching device.

Abstract translation: 用于驱动开关装置的开关驱动电路包括检测通过开关装置的过电流的过电流检测器和向开关装置施加控制电压以控制开关装置处于导通和关断状态的电压控制器。 当过电流检测器检测到过电流时，电压控制器向开关装置施加最初下降到高于开关装置的阈值电压的预定电压的控制电压，然后在经过预定时间之后进一步下降至 开关驱动电路的地电位关断开关器件。 当过电流检测器没有检测到过电流时，电压控制器向开关装置施加在经过预定电压之前下降的控制电压到开关驱动电路的接地电位以关闭开关装置。

公开(公告)号：US20150137314A1

公开(公告)日：2015-05-21

申请号：US14537234

申请日：2014-11-10

Applicant: ROHM CO., LTD.

Inventor： Kosei OSADA ,  Isamu NISHIMURA ,  Tetsuya KAGAWA ,  Daiki YANAGISHIMA ,  Toshiyuki ISHIKAWA ,  Michihiko MIFUJI ,  Satoshi KAGEYAMA ,  Nobuyuki KASAHARA

IPC: H01L49/02 ,  H01L23/552 ,  H01F27/28 ,  H01L23/31

CPC classification number: H01F27/288 ,  H01F27/2804 ,  H01F2027/2819 ,  H01L23/3107 ,  H01L23/49575 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104

Abstract: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Abstract translation: 本发明的半导体器件包括绝缘层，高压线圈和低压线圈，其在垂直方向上以间隔设置在绝缘层中;低电位部分设置在设置在低电压区域周围的低电压区域 高压线圈的平面图的高电压区域，并且与低于高压线圈的电位相连接;以及电场屏蔽部，其设置在高电压线圈与低电压区域之间，并且具有电浮极金属部件 。