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    Ultrathin copper foil with carrier and printed circuit board using same
    11.
    发明申请
    Ultrathin copper foil with carrier and printed circuit board using same 有权
    超薄铜箔带载体和印刷电路板使用相同

    公开(公告)号：US20070141381A1

    公开(公告)日：2007-06-21

    申请号：US11639439

    申请日：2006-12-15

    申请人： Yuuji Suzuki ,  Takami Moteki ,  Kazuhiro Hoshino ,  Satoshi Fujisawa ,  Akira Kawakami

    发明人： Yuuji Suzuki ,  Takami Moteki ,  Kazuhiro Hoshino ,  Satoshi Fujisawa ,  Akira Kawakami

    IPC分类号： B22D25/00

    CPC分类号： H05K3/025 ,  C25D1/04 ,  C25D1/20 ,  Y10T428/12438 ,  Y10T428/12458 ,  Y10T428/12514 ,  Y10T428/12771 ,  Y10T428/12812 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/1291 ,  Y10T428/12931

    摘要： An ultrathin copper foil with a carrier not causing blistering at a release layer interface, having a low carrier peeling force, friendly to the environment, and enabling easy peeling of a carrier foil and an ultrathin copper foil even under a high temperature environment and a printed circuit board enabling a stable production quality of a base of a printed circuit board for fine pattern applications using the ultrathin copper foil with the carrier, that is, a ultrathin copper foil with a carrier comprising a carrier foil, a diffusion prevention layer, a release layer, and an ultrathin copper foil, wherein the release layer is formed by a metal A for retaining a release property and a metal B for facilitating plating of the ultrathin copper foil, a content a of the metal A and a content b of the metal B forming the release layer satisfying an equation: 10≦a/(a+b)*100≦70and a printed circuit board prepared by using such a ultrathin copper foil with a carrier.

    摘要翻译： 一种超薄铜箔，其载体不会在剥离层界面引起起泡，具有低的载体剥离力，对环境友好，并且即使在高温环境下也能够容易地剥离载体箔和超薄铜箔，并且印刷 电路板，其能够使用超薄铜箔与载体的精细图案应用的印刷电路板的基底的稳定的生产质量，即具有载体的超薄铜箔，其包含载体箔，扩散防止层，释放 层和超薄铜箔，其中剥离层由用于保持剥离性的金属A形成，并且金属B用于促进超薄铜箔的镀覆，金属A的含量a和金属的含量b B形成释放层，满足以下等式：<？in-line-formula description =“In-line Formulas”end =“lead”？> 10 <= a /（a + b）* 100 <= 70 < line-formula description =“In-Line Formulas”end =“尾”？和通过使用这种超薄铜箔与载体制备的印刷电路板。

    Method of forming contact holes on a semiconductor surface
    14.
    发明授权
    Method of forming contact holes on a semiconductor surface 失效
    在半导体表面形成接触孔的方法

    公开(公告)号：US06265310B1

    公开(公告)日：2001-07-24

    申请号：US09098059

    申请日：1998-06-16

    申请人： Kazuhiro Hoshino

    发明人： Kazuhiro Hoshino

    IPC分类号： H01L214763

    CPC分类号： H01L21/2855 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/76882

    摘要： A method of manufacturing a semiconductor device utilizing a multi-chamber apparatus comprises the steps of forming a metal film on an insulating layer under the lower pressure within a film forming apparatus and reflowing the metal film on the insulating film, after transferring the semiconductor substrate to a reflow apparatus from the film forming apparatus under the vacuum atmosphere of 1.3×10−6 Pa or less, by simultaneously heating a plurality of semiconductor substrates under the vacuum atmosphere of 1.3×10−6 Pa or less.

    摘要翻译： 利用多腔室装置制造半导体器件的方法包括以下步骤：在成膜装置内的较低压力下在绝缘层上形成金属膜，并在半导体衬底转移到绝缘膜上之后回流绝缘膜上的金属膜 通过在1.3×10 -6 Pa以下的真空气氛下同时加热多个半导体基板，在1.3×10 -6 Pa以下的真空气氛下，从成膜装置回流焊设备。

    Ultrathin copper foil with carrier and printed circuit board using same
    16.
    发明授权
    Ultrathin copper foil with carrier and printed circuit board using same 失效
    超薄铜箔带载体和印刷电路板使用相同

    公开(公告)号：US07985488B2

    公开(公告)日：2011-07-26

    申请号：US12827018

    申请日：2010-06-30

    申请人： Yuuji Suzuki ,  Takami Moteki ,  Kazuhiro Hoshino ,  Satoshi Fujisawa ,  Akira Kawakami

    发明人： Yuuji Suzuki ,  Takami Moteki ,  Kazuhiro Hoshino ,  Satoshi Fujisawa ,  Akira Kawakami

    IPC分类号： B32B15/00

    CPC分类号： H05K3/025 ,  C25D1/04 ,  C25D1/20 ,  Y10T428/12438 ,  Y10T428/12458 ,  Y10T428/12514 ,  Y10T428/12771 ,  Y10T428/12812 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/1291 ,  Y10T428/12931

    摘要： An ultrathin copper foil with a carrier not causing blistering at a release layer interface, having a low carrier peeling force, friendly to the environment, and enabling easy peeling of a carrier foil and an ultrathin copper foil even under a high temperature environment and a printed circuit board enabling a stable production quality of a base of a printed circuit board for fine pattern applications using the ultrathin copper foil with the carrier, that is, a ultrathin copper foil with a carrier comprising a carrier foil, a diffusion prevention layer, a release layer, and an ultrathin copper foil, wherein the release layer is formed by a metal A for retaining a release property and a metal B for facilitating plating of the ultrathin copper foil, a content “a” of the metal A and a content “b” of the metal B forming the release layer satisfying an equation: 10≦a/(a+b)*100≦70 and a printed circuit board prepared by using such a ultrathin copper foil with a carrier.

    摘要翻译： 一种超薄铜箔，其载体不会在剥离层界面引起起泡，具有低的载体剥离力，对环境友好，并且即使在高温环境下也能够容易地剥离载体箔和超薄铜箔，并且印刷 电路板，其能够使用超薄铜箔与载体的精细图案应用的印刷电路板的基底的稳定的生产质量，即具有载体的超薄铜箔，其包含载体箔，扩散防止层，释放 层和超薄铜箔，其中剥离层由用于保持剥离性质的金属A形成，金属B由金属A的含量“a”和含量“b 形成释放层的金属B满足等式：10＆nlE; a /（a + b）* 100＆nlE; 70以及通过使用这种超薄铜箔与载体制备的印刷电路板。

    Semiconductor device comprising Cu--Ta and method for forming the semiconductor device
    20.
    发明授权
    Semiconductor device comprising Cu--Ta and method for forming the semiconductor device 失效
    包含Cu-Ta的半导体器件和用于形成半导体器件的方法

    公开(公告)号：US6111318A

    公开(公告)日：2000-08-29

    申请号：US9271

    申请日：1998-01-20

    申请人： Kazuhiro Hoshino

    发明人： Kazuhiro Hoshino

    IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48

    CPC分类号： H01L23/53238 ,  H01L2924/0002

    摘要： A wiring layer 17' of a semiconductor device is formed, at first, by forming a Cu--Ta film 15 by adding 0.5 weight % of Ta in Cu on a barrier metal layer, and then, by forming a cap metal layer on the film 15. The wiring layer 17' is then etched with a high temperature RIE method. After this, the wiring layer 17' is heat-treated at about 450 .degree. C. for about 120 minutes in a hydrogen reduction atmosphere. With this heat treatment, Ta is precipitated at the grain boundaries of Cu of the Cu--Ta layer 15. Since Ta does not tend to be alloyed with Cu easily and has low solid solubility in Cu crystal, Ta is precipitated at the grain boundaries of Cu by the above heat treatment. When Ta is precipitated at the grain boundaries of Cu such way, grain boundary diffusion is suppressed to generate less voids, so that the resistance to EM is improved.

    摘要翻译： 首先，通过在阻挡金属层上添加0.5重量％的Cu中的Ta，然后通过在膜上形成帽金属层，形成Cu-Ta膜15，形成半导体器件的布线层17' 然后用高温RIE方法蚀刻布线层17'。 之后，在氢还原气氛中，在约450℃下热处理布线层17'约120分钟。 通过这种热处理，Ta在Cu-Ta层15的Cu的晶界处析出。由于Ta不容易与Cu合金化并且在Cu晶体中具有低的固溶度，因此在晶界的晶界析出Ta Cu经上述热处理。 当Ta在Cu的晶界处析出时，晶界扩散被抑制以产生较少的空隙，从而提高了对EM的抗性。