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公开(公告)号：US20130078811A1
公开(公告)日：2013-03-28
申请号：US13241383
申请日：2011-09-23
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： C09G1/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , C11D11/0047 , H01L21/3212 , H01L21/7684
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
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公开(公告)号：US08088690B2
公开(公告)日：2012-01-03
申请号：US12415406
申请日：2009-03-31
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.
摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，缓蚀剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。
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13.发明申请公开(公告)号：US20100327219A1
公开(公告)日：2010-12-30
申请号：US12876518
申请日：2010-09-07
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , C09G1/04
摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.
摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液和可能的聚丙烯酸（PAA）溶液的离子表面活性剂中的1H-苯并三唑（BTA）。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。
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14.发明授权公开(公告)号：US08328892B2
公开(公告)日：2012-12-11
申请号：US11930236
申请日：2007-10-31
IPC分类号： B24D3/02 , C09C1/68 , H01L21/461 , H01L21/302 , C09K13/00 , C09K13/06
CPC分类号： C09K3/1463 , C09G1/02 , C09G1/04
摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.
摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在离子表面活性剂如烷基硫酸钠溶液中的1H-苯并三唑（BTA），以及可能的聚丙烯酸（PAA）溶液。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。
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公开(公告)号：US20100248479A1
公开(公告)日：2010-09-30
申请号：US12415406
申请日：2009-03-31
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.
摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，腐蚀抑制剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。
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公开(公告)号：US5885135A
公开(公告)日：1999-03-23
申请号：US842129
申请日：1997-04-23
申请人： Daniel D. Desorcie , Richard J. Lebel , Charles A. McKinney , Rock Nadeau , Timothy J. Rickard, Jr. , Paul H. Smith, Jr. , Douglas K. Sturtevant , Matthew T. Tiersch
发明人： Daniel D. Desorcie , Richard J. Lebel , Charles A. McKinney , Rock Nadeau , Timothy J. Rickard, Jr. , Paul H. Smith, Jr. , Douglas K. Sturtevant , Matthew T. Tiersch
IPC分类号： B24B41/06 , H01L21/302 , H01L21/304 , B24B1/00
CPC分类号： B24B37/102 , B24B37/30 , B24B41/06 , H01L21/302
摘要： An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polished wafer. Preferred non-uniform surface structure means include use of a wafer carrier having on its lower surface a backing film having a first central portion having a predetermined compressibility and a second peripheral portion having a different compressibility than the first portion. Another non-uniform surface structure means to vary the force against the wafer comprises a wafer carrier having on its lower surface a raised circumferential region around the periphery of the carrier.
摘要翻译： 提供了一种用于抛光半导体晶片的装置，其包括晶片载体，该晶片载体在其下表面具有不均匀的表面结构装置，以在抛光操作期间改变对晶片的力，使得抛光被增强并且在平面 抛光晶圆。 优选的不均匀表面结构包括使用晶片载体，其在其下表面具有背衬膜，该背衬膜具有具有预定压缩性的第一中心部分和具有与第一部分不同的可压缩性的第二周边部分。 另一种不均匀的表面结构意味着改变对晶片的力包括晶片载体，其在其下表面上具有围绕载体周边的凸起的周向区域。
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公开(公告)号：US09057004B2
公开(公告)日：2015-06-16
申请号：US13241383
申请日：2011-09-23
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Matthew T. Tiersch , Eva A. Shah , Eric J. White
IPC分类号： C09G1/02 , H01L21/321 , C09K3/14 , H01L21/768 , C11D11/00
CPC分类号： C09G1/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , C11D11/0047 , H01L21/3212 , H01L21/7684
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
摘要翻译： 化学机械抛光的组合物和方法。 组合物包括表面活性剂阴离子烷基醇和稀释剂。 组合物还包括研磨颗粒和氧化剂。 该方法包括在要抛光的表面上提供该组合物，并通过使该表面与抛光垫接触来抛光该表面。
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公开(公告)号：US08734665B2
公开(公告)日：2014-05-27
申请号：US13271494
申请日：2011-10-12
申请人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
发明人： Graham M. Bates , Michael T. Brigham , Joseph K. Comeau , Jason P. Ritter , Eva A. Shah , Matthew T. Tiersch , Eric J. White
IPC分类号： B44C1/22
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L21/3212 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
摘要翻译： 化学机械抛光的组合物和方法。 组合物包括表面活性剂阴离子烷基醇，受控量的氯离子源和稀释剂。 组合物还包括研磨颗粒和氧化剂。 该方法包括在要抛光的表面上提供该组合物，并通过使该表面与抛光垫接触来抛光该表面。
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19.发明授权公开(公告)号：US08636917B2
公开(公告)日：2014-01-28
申请号：US12876518
申请日：2010-09-07
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , C09G1/04
摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.
摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液和可能的聚丙烯酸（PAA）溶液的离子表面活性剂中的1H-苯并三唑（BTA）。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。
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20.发明申请公开(公告)号：US20080042099A1
公开(公告)日：2008-02-21
申请号：US11465176
申请日：2006-08-17
IPC分类号： C09K13/00 , C09K13/06 , H01L21/461
CPC分类号： C09K3/1463 , C09G1/02 , C09G1/04
摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.
摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在离子表面活性剂如烷基硫酸钠溶液中的1H-苯并三唑（BTA），以及可能的聚丙烯酸（PAA）溶液。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。
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