利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.024 秒)

    CMP method
    1.
    发明授权
    CMP method 有权
    CMP方法

    公开(公告)号：US08088690B2

    公开(公告)日：2012-01-03

    申请号：US12415406

    申请日：2009-03-31

    申请人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

    摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，缓蚀剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。

    CMP METHOD
    2.
    发明申请
    CMP METHOD 有权
    CMP方法

    公开(公告)号：US20100248479A1

    公开(公告)日：2010-09-30

    申请号：US12415406

    申请日：2009-03-31

    申请人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： H01L21/304

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

    摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，腐蚀抑制剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。

    Solution for forming polishing slurry, polishing slurry and related methods
    7.
    发明授权
    Solution for forming polishing slurry, polishing slurry and related methods 有权
    抛光浆，抛光浆及其相关方法的研究

    公开(公告)号：US07824568B2

    公开(公告)日：2010-11-02

    申请号：US11465176

    申请日：2006-08-17

    申请人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09G1/04

    摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

    摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液和可能的聚丙烯酸（PAA）溶液的离子表面活性剂中的1H-苯并三唑（BTA）。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。

    Chemical mechanical polishing slurry and method for polishing metal/oxide layers
    8.
    发明授权
    Chemical mechanical polishing slurry and method for polishing metal/oxide layers 失效
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号：US06294105B1

    公开(公告)日：2001-09-25

    申请号：US08997290

    申请日：1997-12-23

    申请人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： C09K1300

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

    摘要： A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    摘要翻译： 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括30重量％的二氧化硅悬浮液，约800毫升40重量％的三水合九水合物和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

    SOLUTION FOR FORMING POLISHING SLURRY, POLISHING SLURRY AND RELATED METHODS
    9.
    发明申请
    SOLUTION FOR FORMING POLISHING SLURRY, POLISHING SLURRY AND RELATED METHODS 有权
    用于形成抛光浆，抛光浆和相关方法的方案

    公开(公告)号：US20100327219A1

    公开(公告)日：2010-12-30

    申请号：US12876518

    申请日：2010-09-07

    申请人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09G1/04

    摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

    摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液和可能的聚丙烯酸（PAA）溶液的离子表面活性剂中的1H-苯并三唑（BTA）。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。

    Solution for forming polishing slurry, polishing slurry and related methods
    10.
    发明授权
    Solution for forming polishing slurry, polishing slurry and related methods 有权
    抛光浆，抛光浆及其相关方法的研究

    公开(公告)号：US08328892B2

    公开(公告)日：2012-12-11

    申请号：US11930236

    申请日：2007-10-31

    申请人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： B24D3/02 ,  C09C1/68 ,  H01L21/461 ,  H01L21/302 ,  C09K13/00 ,  C09K13/06

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09G1/04

    摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

    摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在离子表面活性剂如烷基硫酸钠溶液中的1H-苯并三唑（BTA），以及可能的聚丙烯酸（PAA）溶液。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。