Radiation detector with diffusion stop layer

    公开(公告)号:US09691808B2

    公开(公告)日:2017-06-27

    申请号:US14798972

    申请日:2015-07-14

    CPC classification number: H01L27/14676 H01L27/14632 H01L27/14696

    Abstract: A radiation detector may include: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer, disposed between the common electrode and the TFT array, on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein the diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer.

    X-ray detector and method of manufacturing the same
    13.
    发明授权
    X-ray detector and method of manufacturing the same 有权
    X射线检测器及其制造方法

    公开(公告)号:US09566035B2

    公开(公告)日:2017-02-14

    申请号:US14704529

    申请日:2015-05-05

    CPC classification number: A61B6/4233 A61B6/0407 A61B6/502 G01T1/17 G01T7/00

    Abstract: A method of manufacturing an X-ray detector includes: applying a mask having an opening on a substrate on which a plurality of charge detection units are positioned; filling the opening with a paste including a photoelectric conversion material that absorbs X-rays to generate charges; and forming a photoconductive layer from the paste by separating the mask from the substrate. A thickness of the paste within the opening is thicker in an area adjacent to at least one edge among edges of the opening than in areas around other edges.

    Abstract translation: 制造X射线检测器的方法包括:在其上定位有多个电荷检测单元的基板上施加具有开口的掩模; 用包含吸收X射线的光电转换材料的糊剂填充开口以产生电荷; 以及通过将掩模与基底分离而从糊状物形成光电导层。 开口内的糊料的厚度在与开口边缘中的至少一个边缘相邻的区域中比在其他边缘周围的区域更厚。

    Optical isolator and photonic integrated circuit including the same

    公开(公告)号:US12153254B2

    公开(公告)日:2024-11-26

    申请号:US18114772

    申请日:2023-02-27

    Abstract: Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.

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