Scroll compressor
    12.
    发明授权

    公开(公告)号:US11815090B2

    公开(公告)日:2023-11-14

    申请号:US17199267

    申请日:2021-03-11

    CPC classification number: F04C15/0007 F04C2/025 F04C2240/30

    Abstract: Provided is a scroll compressor with enhanced sealing structure of a back pressure chamber. The scroll compressor includes a housing, a fixed scroll fixed to inside of the housing and including a fixed wrap, an orbit scroll including an orbit wrap which forms a compression chamber together with the fixed wrap, a back pressure chamber formed at a frame supporting the orbit scroll, and accommodating refrigerant for pressurizing the orbit scroll to a direction of the fixed scroll, and a sealing ring arranged between the fixed scroll and the orbit scroll to prevent the refrigerant in the back pressure chamber from flowing in or out through a gap between the fixed scroll and the orbit scroll, wherein the sealing ring includes a cut portion cut for the sealing ring to be deformable in a circumferential direction.

    SEMICONDUCTOR DEVICES
    13.
    发明公开

    公开(公告)号:US20230275091A1

    公开(公告)日:2023-08-31

    申请号:US18142210

    申请日:2023-05-02

    CPC classification number: H01L27/0924 H01L29/7851

    Abstract: A semiconductor device includes a plurality of active fins extending in a first direction, and spaced apart from each other in a second direction, the plurality of active fins having upper surfaces of different respective heights, a gate structure extending in the second across the plurality of active fins, a device isolation film on the substrate, a source/drain region on the plurality of active fins, and including an epitaxial layer on the plurality of active fins, an insulating spacer on an upper surface of the device isolation film and having a lateral asymmetry with respect to a center line of the source/drain region in a cross section taken along the second direction, an interlayer insulating region on the device isolation film and on the gate structure and the source/drain region, and a contact structure in the interlayer insulating region and electrically connected to the source/drain region.

    Scroll compressor
    14.
    发明授权

    公开(公告)号:US11448213B2

    公开(公告)日:2022-09-20

    申请号:US16861673

    申请日:2020-04-29

    Abstract: A scroll compressor includes a main body, a cover to divide the main body into a low pressure section and a high pressure section, a fixed scroll including a first discharge port, an orbiting scroll to rotate with respect to the fixed scroll and to form a compression chamber together with the fixed scroll, a discharge guide disposed between the fixed scroll and the cover and including a second discharge port connected to the first discharge port, and a back pressure actuator configured to form a back pressure chamber together with the discharge guide and to move in a direction toward the cover with respect to the discharge guide to selectively connect the second discharge port with the high pressure section. The fixed scroll includes a bypass flow path connecting the compression chamber and the second discharge port and a bypass valve to open or close the bypass flow path.

    SEMICONDUCTOR DEVICES
    15.
    发明申请

    公开(公告)号:US20220115375A1

    公开(公告)日:2022-04-14

    申请号:US17348962

    申请日:2021-06-16

    Abstract: A semiconductor device includes a plurality of active fins extending in a first direction, and spaced apart from each other in a second direction, the plurality of active fins having upper surfaces of different respective heights, a gate structure extending in the second across the plurality of active fins, a device isolation film on the substrate, a source/drain region on the plurality of active fins, and including an epitaxial layer on the plurality of active fins, an insulating spacer on an upper surface of the device isolation film and having a lateral asymmetry with respect to a center line of the source/drain region in a cross section taken along the second direction, an interlayer insulating region on the device isolation film and on the gate structure and the source/drain region, and a contact structure in the interlayer insulating region and electrically connected to the source/drain region.

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