公开(公告)号：US20220216332A1

公开(公告)日：2022-07-07

申请号：US17143301

申请日：2021-01-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Abhishek BANERJEE ,  Peter MOENS ,  Herbert DE VLEESCHOUWER ,  Peter COPPENS

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/20

Abstract: High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.

公开(公告)号：US20220189780A1

公开(公告)日：2022-06-16

申请号：US17123264

申请日：2020-12-16

Applicant: Semiconductor Components Industries, LLC

Inventor： Petr KOSTELNIK ,  Tomas NOVAK ,  Peter COPPENS ,  Peter MOENS ,  Abhishek BANERJEE

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H01L21/02 ,  H01L21/3215 ,  H01L29/66

Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

公开(公告)号：US20200105916A1

公开(公告)日：2020-04-02

申请号：US16148127

申请日：2018-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter MOENS ,  Aurore CONSTANT ,  Peter COPPENS ,  Abhishek BANERJEE

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02 ,  H01L29/10

Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.

公开(公告)号：US20200044067A1

公开(公告)日：2020-02-06

申请号：US16052041

申请日：2018-08-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Abhishek BANERJEE ,  Piet VANMEERBEEK ,  Peter MOENS

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L29/36 ,  H01L29/10 ,  H01L21/306 ,  H01L21/28

Abstract: An electronic device can include a channel layer including AlzGa(1-z)N, where 0≤z≤0.1; a gate dielectric layer; and a gate electrode of a high electron mobility transistor (HEMT). The gate dielectric layer can be disposed between the channel layer and the gate electrode. The gate electrode includes a gate electrode film that contacts the gate dielectric layer, wherein the gate electrode film can include a material, wherein the material has a sum of an electron affinity and a bandgap energy of at least 6 eV. In some embodiments, the material can include a p-type semiconductor material. The particular material for the gate electrode film can be selected to achieve a desired threshold voltage for an enhancement-mode HEMT. In another embodiment, a portion of the barrier layer can be left intact under the gate structure. Such a configuration can improve carrier mobility and reduce Rdson.