公开(公告)号：US10707203B2

公开(公告)日：2020-07-07

申请号：US16225930

申请日：2018-12-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Woochul Jeon ,  Jason McDonald

IPC: H01L27/06 ,  H01L21/8258 ,  H01L21/74 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L27/02 ,  H01L29/872 ,  H01L29/20 ,  H01L23/48 ,  H01L29/861

Abstract: A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.

公开(公告)号：US10431525B2

公开(公告)日：2019-10-01

申请号：US16054254

申请日：2018-08-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Chun-Li Liu

IPC: H01L23/48 ,  H01L23/482 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L23/535

Abstract: Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.

公开(公告)号：US10312359B2

公开(公告)日：2019-06-04

申请号：US15955555

申请日：2018-04-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Chun-Li Liu ,  Ali Salih

IPC: H01L29/778 ,  H01L23/495 ,  H01L27/088 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L23/58 ,  H01L29/10

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US09966462B2

公开(公告)日：2018-05-08

申请号：US15208466

申请日：2016-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Chun-Li Liu ,  Ali Salih

IPC: H01L29/15 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L27/088 ,  H01L29/16 ,  H01L23/495

CPC classification number: H01L29/778 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/585 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US09947654B2

公开(公告)日：2018-04-17

申请号：US15260185

申请日：2016-09-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Ali Salih

IPC: H01L29/49 ,  H01L27/06 ,  H01L23/528 ,  H01L49/02 ,  H01L29/40 ,  H01L27/088 ,  H01L29/417 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/7787 ,  H01L27/0883 ,  H01L28/40 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786

Abstract: In an aspect, a cascode circuit can include a high-side transistor and a low-side transistor. The source of the high-side transistor can be coupled to the drain of the low-side transistor; and the gate of the high-side transistor can be coupled to each of the source and the gate of the low-side transistor. In another aspect, an electronic device can include a high-side transistor, a low-side transistor, and a field electrode. The low-side transistor can include a drain region coupled to the source electrode of the high-side transistor. The field electrode can overlie and be capacitively coupled to a channel layer of the high-side transistor, wherein the field electrode is configured to be at a voltage between the voltages of the high-side and low-side power supply terminals.

公开(公告)号：US09754931B2

公开(公告)日：2017-09-05

申请号：US14808627

申请日：2015-07-24

Applicant: Semiconductor Components Industries, LLC

Inventor： Woochul Jeon ,  Joe Fulton ,  Chun-Li Liu

IPC: H01L29/66 ,  H01L27/06 ,  H01L29/778

CPC classification number: H01L27/0629 ,  H01L29/778 ,  H03K17/6871 ,  H03K2017/6875 ,  H03K2217/0036

Abstract: A circuit can include a transistor coupled to a resistor or a diode. In an embodiment, the circuit can include a pair of transistors arranged in a cascode configuration, and each of the transistors can have a corresponding component connected in parallel. In a particular embodiment, the components can be resistors, and in another particular, embodiment, the components can be diodes. The circuit can have less on-state resistance as compared to a circuit in which only one of the components is used, and reduces the off-state voltage on the gate of a high-side transistor. An integrated circuit can include a high electron mobility transistor structure and a resistor, a diode, a pair of resistors, or a pair of diodes.

公开(公告)号：US09741711B2

公开(公告)日：2017-08-22

申请号：US14853729

申请日：2015-09-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Zia Hossain ,  Chun-Li Liu ,  Woochul Jeon ,  Jason McDonald

IPC: H01L29/66 ,  H01L21/70 ,  H01L27/06 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/8258 ,  H01L21/74 ,  H01L29/872 ,  H01L23/48 ,  H01L29/861 ,  H01L29/20

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.

公开(公告)号：US10978581B2

公开(公告)日：2021-04-13

申请号：US16387874

申请日：2019-04-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul Jeon ,  Chun-Li Liu ,  Ali Salih

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/06 ,  H01L23/58 ,  H01L23/495 ,  H01L27/088 ,  H01L29/16 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417 ,  H01L29/10

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US20210066285A1

公开(公告)日：2021-03-04

申请号：US16671391

申请日：2019-11-01

Applicant: Semiconductor Components Industries, LLC

Inventor： Jaume Roig-Guitart ,  Herbert De Vleeschouwer ,  Pierre Gassot ,  Piet Vanmeerbeek ,  Frederick Johan G. Declercq ,  Aarnout Wieers ,  Woochul Jeon

IPC: H01L27/02 ,  H01L29/778

Abstract: An electronic device can include a source terminal, a gate terminal, and a protection circuit. The protection circuit can include a gate section including a first electrode and a second electrode, wherein the first electrode of the gate section is coupled to the gate terminal; and a source section including a first electrode and a second electrode, wherein the first electrode of the source section is coupled to the source terminal. The protection switch can include a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch can be coupled to one another. In an embodiment, the electronic device can further include an electronic component that is protected by the protection circuit.

公开(公告)号：US10937781B1

公开(公告)日：2021-03-02

申请号：US16671391

申请日：2019-11-01

Applicant: Semiconductor Components Industries, LLC

Inventor： Jaume Roig-Guitart ,  Herbert De Vleeschouwer ,  Pierre Gassot ,  Piet Vanmeerbeek ,  Frederick Johan G Declercq ,  Aarnout Wieers ,  Woochul Jeon

IPC: H01L27/02 ,  H01L29/778

Abstract: An electronic device can include a source terminal, a gate terminal, and a protection circuit. The protection circuit can include a gate section including a first electrode and a second electrode, wherein the first electrode of the gate section is coupled to the gate terminal; and a source section including a first electrode and a second electrode, wherein the first electrode of the source section is coupled to the source terminal. The protection switch can include a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch can be coupled to one another. In an embodiment, the electronic device can further include an electronic component that is protected by the protection circuit.