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公开(公告)号：US20130176196A1
公开(公告)日：2013-07-11
申请号：US13781808
申请日：2013-03-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yu Yamazaki , Aya Anzai , Tomoyuki Iwabuchi
CPC classification number: H01L33/46 , G09G3/32 , H01L27/3267
Abstract: The invention provides a light emitting device which is capable of displaying on both sides, has a small volume, and is capable of being used as a module. A light emitting element represented by an EL element and the like is used in a pixel portion, and two pixel portions are provided in one light emitting device. A first pixel portion has a structure to emit light only from a counter electrode side of the light emitting element. A second pixel portion has a structure to emit light only from a pixel electrode side of the light emitting element. That is, in the first pixel portion and the second pixel portion, directions of light emission are reverse in front and back.
Abstract translation: 本发明提供一种能够在两面显示具有小体积并且能够用作模块的发光装置。 在像素部分中使用由EL元件等表示的发光元件，并且在一个发光器件中设置两个像素部。 第一像素部分具有仅从发光元件的对电极侧发光的结构。 第二像素部分具有仅从发光元件的像素电极侧发光的结构。 也就是说，在第一像素部分和第二像素部分中，发光方向正面和背面相反。
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公开(公告)号：US10978613B2
公开(公告)日：2021-04-13
申请号：US15672452
申请日：2017-08-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L27/32 , H01L33/08 , G09G3/3233
Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.
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公开(公告)号：US20200286428A1
公开(公告)日：2020-09-10
申请号：US16881046
申请日：2020-05-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yu Yamazaki , Aya Anzai , Mitsuaki Osame
IPC: G09G3/3233 , G09G3/3266 , F21V23/00 , F21V23/06 , H01L27/32
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
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公开(公告)号：US10367124B2
公开(公告)日：2019-07-30
申请号：US15919780
申请日：2018-03-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kaoru Tsuchiya , Aya Anzai , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda
Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.
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公开(公告)号：US09697772B2
公开(公告)日：2017-07-04
申请号：US15271578
申请日：2016-09-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
IPC: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , H01L33/00
CPC classification number: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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Patent Agency Ranking
公开(公告)号：US09454933B2
公开(公告)日：2016-09-27
申请号：US14662775
申请日：2015-03-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
CPC classification number: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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公开(公告)号：US09300771B2
公开(公告)日：2016-03-29
申请号：US14183679
申请日：2014-02-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yu Yamazaki , Ryota Fukumoto
CPC classification number: H01L27/3262 , G09G3/2022 , G09G3/3233 , G09G3/3291 , G09G2300/0426 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2320/0219 , G09G2320/0233 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3276 , H01L29/78675 , H01L51/52 , H01L2251/5323 , H04M1/0266
Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
Abstract translation: 驱动晶体管的栅极的电位固定，并且驱动晶体管在饱和区域中工作，从而随时提供电流。 在线性区域中工作的电流控制晶体管与驱动晶体管串联布置，并且用于传输像素的发射或非发射信号的视频信号通过开关晶体管输入到电流控制晶体管的栅极。
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公开(公告)号：US20150194095A1
公开(公告)日：2015-07-09
申请号：US14662775
申请日：2015-03-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
CPC classification number: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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公开(公告)号：US08759825B2
公开(公告)日：2014-06-24
申请号：US13804538
申请日：2013-03-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
CPC classification number: H01L27/326 , G09G3/2022 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2300/0885 , G09G2310/0251 , H01L27/283 , H01L29/78672 , H01L51/5012 , H01L51/5296
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。
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公开(公告)号：US20130193424A1
公开(公告)日：2013-08-01
申请号：US13804538
申请日：2013-03-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
CPC classification number: H01L27/326 , G09G3/2022 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2300/0885 , G09G2310/0251 , H01L27/283 , H01L29/78672 , H01L51/5012 , H01L51/5296
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。
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