公开(公告)号：US11817453B2

公开(公告)日：2023-11-14

申请号：US17686460

申请日：2022-03-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo

IPC: H01L27/06 ,  H01L29/66 ,  H01G11/14 ,  H01L29/786 ,  H01L27/12 ,  H01L21/00 ,  H01G11/08 ,  H01L21/8258

CPC classification number: H01L27/0629 ,  H01G11/14 ,  H01L27/1207 ,  H01L27/1211 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696 ,  H01G11/08 ,  H01L21/8258 ,  H01L27/0688 ,  Y02E60/13

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

公开(公告)号：US11735736B2

公开(公告)日：2023-08-22

申请号：US17501462

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kai Kimura ,  Kazutaka Kuriki ,  Teppei Oguni ,  Aya Uchida

IPC: H01M4/62 ,  H01G11/28 ,  H01G11/24 ,  H01G11/26 ,  H01G11/38 ,  H01M4/13 ,  H01M4/133 ,  H01M10/0525 ,  H01M10/0566 ,  H01M10/44 ,  H01M4/02 ,  H01M10/42

CPC classification number: H01M4/622 ,  H01G11/24 ,  H01G11/26 ,  H01G11/28 ,  H01G11/38 ,  H01M4/13 ,  H01M4/133 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0566 ,  H01M10/446 ,  H01M2004/021 ,  H01M2010/4292 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/10 ,  Y02E60/13 ,  Y02T10/70

Abstract: A power storage device with high capacity or high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode includes an active material, a first binder, and a second binder. The specific surface area of the active material is S [m2/g]. The weight of the active material, the weight of the first binder, and the weight of the second binder are a, b, and c, respectively. The solution of {(b+c)/(a+b+c)}×100÷S is 0.3 or more. The electrode includes a first film in contact with the active material. The first film preferably includes a region in contact with the active material. The first film preferably includes a region with a thickness of 2 nm or more and 20 nm or less. The first film contains a water-soluble polymer.

公开(公告)号：US11605804B2

公开(公告)日：2023-03-14

申请号：US17365196

申请日：2021-07-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuhiro Inoue ,  Sachiko Kataniwa ,  Kazutaka Kuriki ,  Junpei Momo

IPC: H01M4/02 ,  H01M4/04 ,  H01G11/28 ,  H01M4/62 ,  H01G11/50 ,  H01G11/84 ,  H01M4/133 ,  H01M4/583 ,  H01M10/0525

Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering pan of the negative electrode active material. The film has an insulating property and lithium ion conductivity.

公开(公告)号：US11587959B2

公开(公告)日：2023-02-21

申请号：US17329266

申请日：2021-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazutaka Kuriki ,  Ryota Tajima ,  Tamae Moriwaka

IPC: H01M10/0565 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01L27/13 ,  H01G11/46 ,  H01G11/56 ,  H01G11/08 ,  H01G11/84 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.

公开(公告)号：US11276685B2

公开(公告)日：2022-03-15

申请号：US17009823

申请日：2020-09-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/06 ,  H01G11/14 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01G11/08 ,  H01L21/8258

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

公开(公告)号：US20220037666A1

公开(公告)日：2022-02-03

申请号：US17501462

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kai Kimura ,  Kazutaka Kuriki ,  Teppei Oguni ,  Aya Uchida

IPC: H01M4/62 ,  H01G11/28 ,  H01G11/24 ,  H01G11/26 ,  H01G11/38 ,  H01M4/13 ,  H01M4/133 ,  H01M10/0525 ,  H01M10/0566

Abstract: A power storage device with high capacity or high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode includes an active material, a first binder, and a second binder. The specific surface area of the active material is S [m2/g]. The weight of the active material, the weight of the first binder, and the weight of the second binder are a, b, and c, respectively. The solution of {(b+c)/(a+b+c)}×100÷S is 0.3 or more. The electrode includes a first film in contact with the active material. The first film preferably includes a region in contact with the active material. The first film preferably includes a region with a thickness of 2 nm or more and 20 nm or less. The first film contains a water-soluble polymer.

公开(公告)号：US10741679B2

公开(公告)日：2020-08-11

申请号：US15947902

申请日：2018-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/06 ,  H01L21/8258

Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

公开(公告)号：US10204898B2

公开(公告)日：2019-02-12

申请号：US14817242

申请日：2015-08-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Kazutaka Kuriki ,  Hiromichi Godo

IPC: H01L29/94 ,  H01L27/06 ,  H01L29/66 ,  H01L29/786 ,  H01G11/14 ,  H01L21/8258 ,  H01G11/08

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

公开(公告)号：US10128498B2

公开(公告)日：2018-11-13

申请号：US15165147

申请日：2016-05-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka Kuriki ,  Nobuhiro Inoue ,  Kiyofumi Ogino

IPC: H01M4/36 ,  H01G11/06 ,  H01G11/50 ,  H01M4/38 ,  H01M4/66 ,  H01M10/0562 ,  H01G11/68 ,  H01G11/72 ,  H01M10/0525 ,  H01M4/02

Abstract: A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.

公开(公告)号：US09899660B2

公开(公告)日：2018-02-20

申请号：US15621520

申请日：2017-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuhiro Inoue ,  Sachiko Kataniwa ,  Kazutaka Kuriki ,  Junpei Momo

IPC: H01M10/04 ,  H01M4/04 ,  H01M10/0525 ,  H01M4/62 ,  H01M4/133 ,  H01G11/84 ,  H01G11/50 ,  H01G11/28 ,  H01M4/583 ,  H01M4/02

CPC classification number: H01M4/0404 ,  H01G11/28 ,  H01G11/50 ,  H01G11/84 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/583 ,  H01M4/623 ,  H01M4/628 ,  H01M10/0525 ,  H01M2004/027 ,  Y02E60/13 ,  Y02T10/7022

Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity.