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公开(公告)号：US20240407211A1
公开(公告)日：2024-12-05
申请号：US18695104
申请日：2022-09-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masahiro KATAYAMA , Yukinori SHIMA , Masataka NAKADA , Shingo EGUCHI , Daiki NAKAMURA , Koji KUSUNOKI , Kensuke YOSHIZUMI
IPC: H10K59/131 , H10K50/19 , H10K59/38
Abstract: A display device in which a voltage drop is inhibited adequately is provided. The display device includes a common electrode included in a first light-emitting device in which a plurality of light-emitting layers are stacked and a second light-emitting device in which a plurality of light-emitting layers are stacked and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the first wiring laver has a lattice shape in a top view.
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公开(公告)号：US20180374957A1
公开(公告)日：2018-12-27
申请号：US16110488
申请日：2018-08-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masahiro KATAYAMA , Yasutaka NAKAZAWA , Masatoshi YOKOYAMA , Masahiko HAYAKAWA , Kenichi OKAZAKI , Shunsuke KOSHIOKA
Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.
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公开(公告)号：US20170263497A1
公开(公告)日：2017-09-14
申请号：US15608539
申请日：2017-05-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masahiro KATAYAMA
IPC: H01L21/768 , H01L27/115 , H01L23/528 , H01L23/522 , H01L23/373
CPC classification number: H01L21/76861 , G02F1/133345 , G02F1/133553 , G02F1/1337 , G02F1/1339 , G02F1/13439 , H01L21/76816 , H01L23/373 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/5283 , H01L27/115 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1259 , H01L27/326 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
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公开(公告)号：US20160336352A1
公开(公告)日：2016-11-17
申请号：US15220430
申请日：2016-07-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masahiro KATAYAMA , Masataka NAKADA
IPC: H01L27/12 , H01L29/49 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/1255 , H01L27/3265 , H01L29/4908 , H01L29/78603 , H01L29/78645 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
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公开(公告)号：US20150221775A1
公开(公告)日：2015-08-06
申请号：US14610383
申请日：2015-01-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masataka NAKADA , Masahiro KATAYAMA
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/78648
Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
Abstract translation: 提供具有小寄生电容的半导体器件。 或者，为了提供低功耗的半导体器件。 半导体器件包括晶体管和电容器。 晶体管包括第一导体，第一导体上的第一绝缘体，包括与第一导体重叠的区域的半导体，第一绝缘体插入其间，半导体上的第二绝缘体，包括与半导体重叠的区域的第二导体， 插入其间的第二绝缘体，以及包括与半导体的顶表面接触的区域的第三导体和第四导体。 电容器包括由与第一导体相同的层形成的层和由与第三导体和第四导体相同的层形成的层。
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Patent Agency Ranking
公开(公告)号：US20150153599A1
公开(公告)日：2015-06-04
申请号：US14553269
申请日：2014-11-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masahiro KATAYAMA
IPC: G02F1/1368 , H01L27/12 , G02F1/133 , G02F1/1362 , G02F1/1333
CPC classification number: H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78648 , H01L29/7869 , H01L29/78696 , H01L2227/323
Abstract: To provide a display device in which plural kinds of circuits are formed over one substrate and plural kinds of transistors corresponding to characteristics of the plural kinds of circuits are provided. The display device includes a pixel portion and a driver circuit that drives the pixel portion over one substrate. The pixel portion includes a first transistor including a first oxide semiconductor film. The driver circuit includes a second transistor including a second oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film are formed over one insulating surface. A channel length of the first transistor is longer than a channel length of the second transistor. The channel length of the first transistor is greater than or equal to 2.5 micrometer.
Abstract translation: 为了提供一种在一个衬底上形成多种电路的显示装置，并且提供了与多种电路的特性对应的多种晶体管。 显示装置包括像素部分和驱动电路，其驱动像素部分在一个衬底上。 像素部分包括包括第一氧化物半导体膜的第一晶体管。 驱动器电路包括包括第二氧化物半导体膜的第二晶体管。 第一氧化物半导体膜和第二氧化物半导体膜形成在一个绝缘表面上。 第一晶体管的沟道长度比第二晶体管的沟道长度长。 第一晶体管的沟道长度大于或等于2.5微米。
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公开(公告)号：US20250008780A1
公开(公告)日：2025-01-02
申请号：US18707700
申请日：2022-11-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masataka NAKADA , Masahiro KATAYAMA , Rai SATO , Yasuharu HOSAKA , Toshimitsu OBONAI , Masayoshi DOBASHI , Koji KUSUNOKI , Tomonori NAKAYAMA
IPC: H10K59/122 , H10K59/131
Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer. An end portion of the second insulating layer is positioned over the first conductive layer. An end portion of the second insulating layer is positioned outward from the end portion of the first insulating layer.
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公开(公告)号：US20250004337A1
公开(公告)日：2025-01-02
申请号：US18710360
申请日：2022-11-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Koji KUSUNOKI , Masahiro KATAYAMA , Rai SATO
IPC: G02F1/1362 , G02F1/133 , G02F1/1333 , G02F1/1335 , G02F1/13357 , G02F1/1368 , H01L25/16 , H01L27/12
Abstract: A display device with a high aperture ratio is provided. A step caused by a contact hole (50) for electrically connecting a wiring (33) and a pixel electrode (41) to each other is eliminated by being filled with an organic insulating layer (52), and a top surface of the pixel electrode is made flat to form an alignment film (45a) so that an alignment defect of a liquid crystal layer (40) is reduced. In addition, a light-transmitting material is used for the wiring (33) exposed to a bottom portion of the contact hole (50). Accordingly, an effective display region of a liquid crystal device can be increased. That is, the display device can have a high aperture ratio.
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公开(公告)号：US20240099069A1
公开(公告)日：2024-03-21
申请号：US18276078
申请日：2022-02-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Rai SATO , Masahiro KATAYAMA , Naoto GOTO , Yasutaka NAKAZAWA , Kenichi OKAZAKI
IPC: H10K59/122 , H10K59/12
CPC classification number: H10K59/122 , H10K59/1201
Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.
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公开(公告)号：US20190244981A1
公开(公告)日：2019-08-08
申请号：US16361452
申请日：2019-03-22
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masahiro KATAYAMA , Masataka NAKADA
IPC: H01L27/12 , H01L29/786 , H01L29/49 , H01L27/32
Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.
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