公开(公告)号：US12002876B2

公开(公告)日：2024-06-04

申请号：US18084912

申请日：2022-12-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

IPC分类号： H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/66969 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7849 ,  H01L29/786

摘要： In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US20140084273A1

公开(公告)日：2014-03-27

申请号：US14029208

申请日：2013-09-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tomonori Nakayama ,  Takako TAKASU ,  Satoko SHITAGAKI ,  Harue OSAKA ,  Toshiki HAMADA

IPC分类号： H01L51/00

CPC分类号： H01L51/0072 ,  C07D487/14 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1059 ,  C09K2211/185 ,  H01L51/0058 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5004 ,  H01L51/5016 ,  H01L2251/552 ,  H05B33/14

摘要： A light-emitting element emitting phosphorescence and having high emission efficiency, in which a property of injecting holes to a light-emitting layer is increased, is provided. The light-emitting layer of the light-emitting element includes a first organic compound represented by the following general formula (G1) and a second organic compound which is a phosphorescent compound. The difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is lower than or equal to 0.3 eV.

摘要翻译： 提供了发射磷光并且具有高发光效率的发光元件，其中向发光层注入空穴的性质增加。 发光元件的发光层包括由以下通式（G1）表示的第一有机化合物和作为磷光化合物的第二有机化合物。 第一有机化合物的HOMO能级与第二有机化合物的HOMO能级之间的差异小于或等于0.3eV。

公开(公告)号：US11031506B2

公开(公告)日：2021-06-08

申请号：US16553287

申请日：2019-08-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Toshikazu Ohno ,  Daisuke Yamaguchi ,  Tomonori Nakayama

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L27/15 ,  H01L29/66

摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.