公开(公告)号：US09496555B2

公开(公告)日：2016-11-15

申请号：US14595355

申请日：2015-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Futamura

IPC: H01M4/58 ,  C01B25/45 ,  H01M10/0525 ,  H01M4/02

Abstract: To simply manufacture a lithium-containing oxide at lower manufacturing cost. A method for manufacturing a lithium-containing composite oxide expressed by a general formula LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)). A solution containing Li and P is formed and then is dripped in a solution containing M (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) to form a mixed solution. By a hydrothermal method using the mixed solution, a single crystal particle of a lithium-containing composite oxide expressed by the general formula LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) is manufactured.

公开(公告)号：US09082688B2

公开(公告)日：2015-07-14

申请号：US13731649

申请日：2012-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L29/72 ,  H01L29/20 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

Abstract translation: 需要包括具有适当结构和占用面积小的氧化物半导体，保护电路等的显示装置。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 在所述栅极绝缘层上方并与所述栅电极重叠的第一氧化物半导体层; 以及通过层叠导电层和第二氧化物半导体层而形成的第一布线层和第二布线层，并且其端部在第一氧化物半导体层上方并与栅电极重叠。 非线性元件的栅电极连接到扫描线或信号线，非线性元件的第一布线层或第二布线层直接连接到栅极电极层，以施加电位 栅电极。

公开(公告)号：US11646321B2

公开(公告)日：2023-05-09

申请号：US17365174

申请日：2021-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/32 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/86 ,  H01L23/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/136204 ,  G02F1/136286 ,  H01L27/0266 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US11101460B2

公开(公告)日：2021-08-24

申请号：US16263134

申请日：2019-01-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tomoya Futamura ,  Tamae Moriwaka

IPC: H01M4/26 ,  H01M4/36 ,  H01M4/131 ,  H01M4/485 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  H01M4/133 ,  H01M4/136 ,  H01M4/587 ,  H01M4/02

Abstract: To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.

公开(公告)号：US10205160B2

公开(公告)日：2019-02-12

申请号：US14725724

申请日：2015-05-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tomoya Futamura ,  Tamae Moriwaka

IPC: H01M4/36 ,  H01M4/131 ,  H01M4/485 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  H01M4/133 ,  H01M4/136 ,  H01M4/587 ,  H01M4/02

Abstract: To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.

公开(公告)号：US09915843B2

公开(公告)日：2018-03-13

申请号：US15623838

申请日：2017-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: G02F1/1362 ,  H01L27/02 ,  H01L27/12 ,  H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US09703157B2

公开(公告)日：2017-07-11

申请号：US14837599

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: G02F1/1362 ,  H01L27/02 ,  H01L27/12 ,  H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US09130067B2

公开(公告)日：2015-09-08

申请号：US13780138

申请日：2013-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L29/72 ,  H01L33/00 ,  H01L27/02 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

公开(公告)号：US12074272B2

公开(公告)日：2024-08-27

申请号：US17736687

申请日：2022-05-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Futamura ,  Tamae Moriwaka ,  Takahiro Kawakami ,  Junpei Momo ,  Nobuhiro Inoue

IPC: H01M10/0525 ,  C30B1/00 ,  H01M4/02 ,  H01M4/13 ,  H01M4/136 ,  H01M4/36 ,  H01M4/58 ,  H01M4/66

CPC classification number: H01M10/0525 ,  H01M4/13 ,  H01M4/136 ,  H01M4/362 ,  H01M4/5825 ,  H01M4/665 ,  H01M4/668 ,  C30B1/00 ,  H01M2004/021 ,  H01M2004/028 ,  Y02E60/10 ,  Y02P70/50

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

公开(公告)号：US11335945B2

公开(公告)日：2022-05-17

申请号：US16791328

申请日：2020-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya Futamura ,  Tamae Moriwaka ,  Takahiro Kawakami ,  Junpei Momo ,  Nobuhiro Inoue

IPC: H01M10/0525 ,  H01M4/136 ,  H01M4/58 ,  H01M4/13 ,  H01M4/36 ,  H01M4/66 ,  H01M4/02 ,  C30B1/00

Abstract: A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.