公开(公告)号：US20140132908A1

公开(公告)日：2014-05-15

申请号：US14158122

申请日：2014-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC: G02F1/1339

CPC classification number: G02F1/1339 ,  G02F1/1341 ,  G02F2001/13415

Abstract: A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required. According to the present invention, a protective film 123 comprising at least one silicon nitride film, which is formed by a ratio frequency sputtering using a silicon target, is provided over an opposing substrate (a flexible substrate); sealant 112 is drawn; a liquid crystal material 114 is dropped over the opposing substrate in vacuo; and the opposing substrate is pasted to a flexible substrate 110 provided with a pixel electrode 111 and a columnar spacer 115.

Abstract translation: 随着屏幕尺寸的增加，使用塑料基板的液晶显示装置需要具有高分辨率，高开口率，高可靠性等。 此外，还需要高生产率和成本降低。 根据本发明，在相对的基板（柔性基板）上设置包括通过使用硅靶的比率频率溅射形成的至少一个氮化硅膜的保护膜123。 抽出密封剂112; 将液晶材料114真空滴在相对的基板上; 并且将相对的基板粘贴到设置有像素电极111和柱状间隔物115的柔性基板110上。

公开(公告)号：US20200312891A1

公开(公告)日：2020-10-01

申请号：US16847933

申请日：2020-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L21/762 ,  H01L27/32 ,  B60R1/00 ,  B60R11/02 ,  B60R11/04 ,  H01L21/683

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

公开(公告)号：US20190129214A1

公开(公告)日：2019-05-02

申请号：US16192844

申请日：2018-11-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Satoshi MURAKAMI ,  Hajime KIMURA

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  H05B33/04 ,  H01L27/32 ,  H01L51/52

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

公开(公告)号：US20170047358A1

公开(公告)日：2017-02-16

申请号：US15335854

申请日：2016-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Mayumi MIZUKAMI ,  Shunpei YAMAZAKI

IPC: H01L27/12

Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

Abstract translation: 本发明提供一种剥离方法，而不会对剥离层造成损害，其目的在于，不仅剥离面积小的剥离层，而且能够剥离整个表面上具有大面积的剥离层 优良的产率。 金属层或氮化物层11设置在基板上，并且还提供与上述金属层或氮化物层11接触的氧化物层12，此外，如果层叠膜形成或500℃的热处理 或更高的温度，可以通过物理手段在层中或与氧化物层12的界面上容易且清楚地分离。

公开(公告)号：US20150311439A1

公开(公告)日：2015-10-29

申请号：US14704303

申请日：2015-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L51/00 ,  H01L27/32

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

Abstract translation: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

公开(公告)号：US20150035058A1

公开(公告)日：2015-02-05

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/51 ,  H01L29/49

CPC classification number: H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

Abstract translation: 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。

公开(公告)号：US20150014665A1

公开(公告)日：2015-01-15

申请号：US14341172

申请日：2014-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC: H01L51/52 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338 ,  H01L2251/558

Abstract: An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (1201) and an organic light emitting element (1202) are formed on the same substrate (1203) as structuring elements of a light emitting device (1200). A first insulating film (1205) which functions as a blocking layer is formed on the substrate (1203) side of the TFT (1201), and a second insulating film (1206) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film (1207) which functions as a barrier film is formed on the lower layer side of the organic light emitting element (1202). The third insulating film (1207) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film (1208) and a partitioning layer (1209) formed on the upper layer side of the organic light emitting element (1202) are formed using similar inorganic insulating films.

Abstract translation: 目的是提高通过组合TFT和有机发光元件而构成的发光器件的可靠性。 在与发光器件（1200）的结构元件相同的衬底（1203）上形成TFT（1201）和有机发光元件（1202）。 在TFT（1201）的基板（1203）侧形成有用作阻挡层的第一绝缘膜（1205），在相对的上层侧形成作为保护膜的第二绝缘膜（1206）。 此外，在有机发光元件（1202）的下层侧形成用作阻挡膜的第三绝缘膜（1207）。 第三绝缘膜（1207）由诸如氮化硅膜，氮氧化硅膜，氮化铝膜，氧化铝膜或氮氧化铝膜的无机绝缘膜形成。 使用类似的无机绝缘膜形成在有机发光元件（1202）的上层侧上形成的第四绝缘膜（1208）和分隔层（1209）。

公开(公告)号：US20130214324A1

公开(公告)日：2013-08-22

申请号：US13848168

申请日：2013-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Mayumi MIZUKAMI ,  Shunpei YAMAZAKI

IPC: H01L33/44

CPC classification number: H01L27/1266 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/44 ,  H01L2227/326 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

公开(公告)号：US20200328372A1

公开(公告)日：2020-10-15

申请号：US16914735

申请日：2020-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

公开(公告)号：US20180047933A1

公开(公告)日：2018-02-15

申请号：US15698688

申请日：2017-09-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hirokazu YAMAGATA ,  Shunpei YAMAZAKI ,  Toru TAKAYAMA

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  H01L51/50 ,  H01L51/00

CPC classification number: H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

Abstract: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.