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公开(公告)号：US20150179879A1
公开(公告)日：2015-06-25
申请号：US14641221
申请日：2015-03-06
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
CPC classification number: H01L33/08 , H01L33/007 , H01L33/10 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/42 , H01L33/46 , H05B33/06
Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.
Abstract translation: 公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于衬底上并具有第一半导体层，有源层和第二半导体层的发光结构。 第一电极焊盘电连接到第一半导体层。 第二电极焊盘位于衬底上。 绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。 至少一个上延伸部连接到第二电极焊盘以与第二半导体层电连接。 此外，光提取元件的图案位于第二半导体层上。
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公开(公告)号：US10608141B2
公开(公告)日：2020-03-31
申请号：US15936321
申请日：2018-03-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US10193017B2
公开(公告)日：2019-01-29
申请号：US15905224
申请日：2018-02-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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公开(公告)号：US20180190864A1
公开(公告)日：2018-07-05
申请号：US15905224
申请日：2018-02-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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公开(公告)号：US09929314B2
公开(公告)日：2018-03-27
申请号：US15336510
申请日：2016-10-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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Patent Agency Ranking
公开(公告)号：US09520536B2
公开(公告)日：2016-12-13
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US20160118564A1
公开(公告)日：2016-04-28
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US11239387B2
公开(公告)日：2022-02-01
申请号：US16246192
申请日：2019-01-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju Lee , Seom Geun Lee , Kyoung Wan Kim , Yong Woo Ryu , Mi Na Jang
Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.
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公开(公告)号：US10937935B2
公开(公告)日：2021-03-02
申请号：US16453332
申请日：2019-06-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong Lee , Kyoung Wan Kim , Keum Ju Lee
Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.
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公开(公告)号：US10559715B2
公开(公告)日：2020-02-11
申请号：US16259478
申请日：2019-01-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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